GT650N15K

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GT650N15K

+BOM

N150V,RD(MAX)<65M@10V,VTH2.5V~4.

  • ManufacturerGoford Semiconductor

  • Mfr. Part #GT650N15K

  • In Stock5981

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Specifications

Attribute Value
Supplier Goford Semiconductor
Package / Case Tape & Reel (TR),Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V
Current - Continuous Drain(Id) @ 25°C 20A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 65mOhm @ 10A, 10V
Vgs(th)(Max) @ Id 4.5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 12 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 600 pF @ 75 V
Power Dissipation (Max) 68W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252

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