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HM5149NL
+BOMPULSE XFMR 1CT:1CT TX 1CT:1CT RX
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ManufacturerPulse Electronics
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Mfr. Part #HM5149NL
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Datasheet HM5149NL DataSheet
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In Stock7456
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Specifications
| Attribute | Value |
| Part Status | Active |
| Transformer Type | LAN 10/100/1000 Base-T |
| Inductance | 360µH |
| Turns Ratio - Primary:Secondary | 1CT:1CT Transmitter, 1CT:1CT Receiver |
| Mounting Type | Surface Mount |
| Size / Dimension | 0.700" L x 0.410" W (17.78mm x 10.41mm) |
| Height - Seated (Max) | 0.126" (3.20mm) |
| Operating Temperature | -40°C ~ 125°C |
Overview
Description
Key features of DRAM chips like the HM5149NL include high-density storage, fast access times, and volatility, meaning they require a constant power supply to retain data. These chips are often used in systems where quick data access and large capacity are needed, such as in computer systems, networking equipment, and consumer electronics.
The HM5149NL would typically be used in older systems, as newer technology has evolved beyond traditional DRAM in terms of speed, capacity, and power efficiency. For specific technical details or applications, consulting the component's datasheet or manufacturer documentation would be necessary.
Equivalent
1. TMS4164 by Texas Instruments
2. MB8264 by Fujitsu
3. MCM6665 by Motorola
4. MB8264 by Fujitsu
5. MK4564 by Mostek
These chips share similar specifications and can often be used interchangeably in applications that require 64K x 1-bit DRAM. However, always verify compatibility with the specific requirements of your project.
Features
1. Capacity: The chip typically offers a 4-megabit storage capacity, organized in a 1M x 4-bit configuration, suitable for various applications requiring medium-level memory.
2. Package Type: Generally available in a compact package such as SOJ (Small Outline J-leaded), enhancing its usability in space-constrained environments.
3. Access Time: It usually features an access time ranging from 80 to 100 nanoseconds, which provides relatively fast data retrieval.
4. Voltage: Operates on a single 5V power supply, which is standard for many electronic components, making it compatible with a variety of systems.
5. Data Retention: Offers reliable data retention capabilities with periodic refresh cycles, characteristic of DRAM technology.
6. Temperature Range: Designed to operate within standard commercial temperature ranges, ensuring performance stability across different environmental conditions.
These features make the HM5149NL suitable for use in computers, consumer electronics, and other digital devices requiring efficient and reliable memory solutions.
Pinout
Here's a brief overview of its pin functions:
1. VCC: Supply voltage.
2. GND: Ground.
3. Address Inputs (A0-A8): These pins are used to input the address for accessing specific memory locations.
4. Data Input/Output (I/O): This pin is used for both inputting data to be stored and outputting data that is read from a memory cell.
5. Write Enable (WE): This pin controls whether data is being written to or read from the memory.
6. RAS (Row Address Strobe): Used to latch the row address.
7. CAS (Column Address Strobe): Used to latch the column address.
The HM5149NL requires the correct sequence and timing of signals to read from or write to its memory cells. It is important to refer to the specific datasheet for detailed electrical characteristics and timing requirements.