Images are for reference only
IDB09E60ATMA1
+BOMDIODE GEN PURP 600V 19.3A TO263
-
ManufacturerInfineon Technologies
-
Mfr. Part #IDB09E60ATMA1
-
Datasheet IDB09E60ATMA1 DataSheet
-
Package TO-263-3
-
In Stock4998
365 Days Quality Guarantee
7*24 hours service quarantee
90-day after-sales guarantee
Genuine Product Guarantee
Specifications
| Attribute | Value |
| Supplier | Infineon Technologies,Rochester Electronics, LLC |
| Package / Case | Tape & Reel (TR),Bulk |
| Part Status | Obsolete |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Current - Average Rectified(Io) | 19.3A (DC) |
| Voltage - Forward (Vf) (Max) @ If | 2 V @ 9 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 75 ns |
| Current - Reverse Leakage @ Vr | 50 µA @ 600 V |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO263-3-2 |
