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IKW15N120H3
+BOM-
ManufacturerInfineon Technologies
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Mfr. Part #IKW15N120H3
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In Stock8021
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Specifications
| Attribute | Value |
| Packaging | Tube |
| Brand | Infineon Technologies |
| Product Type | IGBT Transistors |
| Subcategory | IGBTs |
| Maximum Gate Emitter Voltage | - 20 V, 20 V |
| Series | Trenchstop IGBT4 |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Minimum Operating Temperature | - 40 C |
| Maximum Operating Temperature | + 175 C |
| Unit Weight | 1.340411 oz |
| Factory Pack Quantity | 240 |
| Part # Aliases | SP000674422 IKW15N12H3XK IKW15N120H3FKSA1 |
| Technology | Si |
| Configuration | Single |
| Collector - Emitter Voltage VCEO Max | 1.2 kV |
| Collector - Emitter Saturation Voltage | 2.05 V |
| Continuous Collector Current at 25 C | 30 A |
| Pd - Power Dissipation | 217 W |
| Gate - Emitter Leakage Current | 600 nA |
| Tradename | TRENCHSTOP |
Overview
Description
The IKW15N120H3 is a high-performance insulated gate bipolar transistor (IGBT) designed for industrial applications. It belongs to the Infineon H3 family, known for its efficiency and reliability in power conversion systems. This IGBT features a voltage rating of 1200 volts and a current rating of 15 amps, making it suitable for various applications such as motor drives, renewable energy systems, and power supplies.
Key characteristics include low conduction and switching losses, which enhance overall system efficiency. The IKW15N120H3 also offers robust thermal performance, allowing it to operate effectively in demanding conditions. Its compact package design facilitates easy integration into existing circuits, while its high gate drive capability allows for faster switching times, reducing electromagnetic interference (EMI).
Overall, the IKW15N120H3 is ideal for engineers seeking reliable, efficient solutions in high-voltage, high-current power electronics applications.
Key characteristics include low conduction and switching losses, which enhance overall system efficiency. The IKW15N120H3 also offers robust thermal performance, allowing it to operate effectively in demanding conditions. Its compact package design facilitates easy integration into existing circuits, while its high gate drive capability allows for faster switching times, reducing electromagnetic interference (EMI).
Overall, the IKW15N120H3 is ideal for engineers seeking reliable, efficient solutions in high-voltage, high-current power electronics applications.
Equivalent
The IKW15N120H3 is an IGBT (Insulated Gate Bipolar Transistor) from Infineon. Equivalent products include:
1. IRG4PH50KD - International Rectifier
2. FGA25N120 - Fairchild Semiconductor
3. MIGB120N120 - Mitsubishi Electric
4. NGBT120N120 - ON Semiconductor
Ensure to check specifications like voltage, current ratings, and switching characteristics for compatibility.
1. IRG4PH50KD - International Rectifier
2. FGA25N120 - Fairchild Semiconductor
3. MIGB120N120 - Mitsubishi Electric
4. NGBT120N120 - ON Semiconductor
Ensure to check specifications like voltage, current ratings, and switching characteristics for compatibility.
Features
The IKW15N120H3 is a high-performance N-channel MOSFET designed for power applications. Key features include:
1. Voltage Rating: 1200V, enabling operation in high-voltage circuits.
2. Current Rating: 15A continuous drain current, suitable for various power applications.
3. Low On-Resistance: With a typical RDS(on) of around 0.15Ω, it minimizes conduction losses.
4. Fast Switching Speed: Designed for efficient switching, making it ideal for high-frequency applications.
5. Built-in Diode: Features a body diode with low forward voltage drop, enhancing performance in reverse conduction scenarios.
6. Thermal Performance: Robust thermal characteristics with a high maximum junction temperature to ensure reliability.
7. Package Type: Available in a TO-247 package, facilitating easy mounting and heat dissipation.
These features make the IKW15N120H3 suitable for applications in power supplies, motor drives, and renewable energy systems.
1. Voltage Rating: 1200V, enabling operation in high-voltage circuits.
2. Current Rating: 15A continuous drain current, suitable for various power applications.
3. Low On-Resistance: With a typical RDS(on) of around 0.15Ω, it minimizes conduction losses.
4. Fast Switching Speed: Designed for efficient switching, making it ideal for high-frequency applications.
5. Built-in Diode: Features a body diode with low forward voltage drop, enhancing performance in reverse conduction scenarios.
6. Thermal Performance: Robust thermal characteristics with a high maximum junction temperature to ensure reliability.
7. Package Type: Available in a TO-247 package, facilitating easy mounting and heat dissipation.
These features make the IKW15N120H3 suitable for applications in power supplies, motor drives, and renewable energy systems.
Pinout
The IKW15N120H3 is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) from Infineon Technologies, designed for high-voltage applications. It features a standard TO-247 package, which typically has three pins.
Pin Configuration:
1. Gate (G): Controls the MOSFET's switching state (on/off).
2. Drain (D): The output terminal where the current flows when the MOSFET is in the on state.
3. Source (S): The terminal through which the current exits the device.
Specifications:
- Voltage Rating: 1200V
- Max Current: 15A
- R_DS(on): Low on-resistance for efficient conduction.
This device is suitable for applications such as power converters, motor drives, and other high-voltage switching applications.
Pin Configuration:
1. Gate (G): Controls the MOSFET's switching state (on/off).
2. Drain (D): The output terminal where the current flows when the MOSFET is in the on state.
3. Source (S): The terminal through which the current exits the device.
Specifications:
- Voltage Rating: 1200V
- Max Current: 15A
- R_DS(on): Low on-resistance for efficient conduction.
This device is suitable for applications such as power converters, motor drives, and other high-voltage switching applications.
Manufacturer
The IKW15N120H3 is manufactured by Infineon Technologies AG, a leading global semiconductor manufacturer based in Germany. Infineon specializes in semiconductor and system solutions for automotive, industrial power control, and chip card and security applications. The company is known for its innovation in power semiconductors, microcontrollers, and sensor technologies. Infineon’s products are widely used in various applications, including renewable energy systems, electric vehicles, and industrial automation, making it a key player in the semiconductor industry focused on enhancing efficiency and sustainability.
Application
The IKW15N120H3 is a high-performance IGBT (Insulated Gate Bipolar Transistor) used primarily in power electronics applications. Key areas include:
1. Inverters: Utilized in solar inverters and industrial motor drives.
2. Switching Power Supplies: Suitable for high-efficiency power conversion.
3. Electric Vehicles: Employed in traction drives and battery management systems.
4. UPS Systems: In uninterruptible power supplies for reliable energy backup.
5. Induction Heating: Used in heating applications for efficient energy transfer.
Its high voltage and current ratings make it ideal for demanding applications requiring robust performance.
1. Inverters: Utilized in solar inverters and industrial motor drives.
2. Switching Power Supplies: Suitable for high-efficiency power conversion.
3. Electric Vehicles: Employed in traction drives and battery management systems.
4. UPS Systems: In uninterruptible power supplies for reliable energy backup.
5. Induction Heating: Used in heating applications for efficient energy transfer.
Its high voltage and current ratings make it ideal for demanding applications requiring robust performance.
Package
The IKW15N120H3 is typically packaged in a TO-247 format. This package type is designed for high-power applications, providing good thermal performance and ease of mounting.
