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IPA60R299CP
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ManufacturerInfineon Technologies
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Mfr. Part #IPA60R299CP
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In Stock8310
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Specifications
| Attribute | Value |
| Technology | Si |
| Packaging | Tube |
| Brand | Infineon Technologies |
| Product Type | MOSFETs |
| Series | CoolMOS CE |
| Factory Pack Quantity | 500 |
| Subcategory | Transistors |
| Part # Aliases | IPA6R299CPXK SP000096438 IPA60R299CPXKSA1 |
| Mounting Type | Through Hole |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Height | 16.15 mm |
| Length | 10.65 mm |
| Width | 4.85 mm |
| Unit Weight | 0.068784 oz |
| Package / Case | TO-220FP-3 |
| Configuration | Single |
| Tradename | CoolMOS |
| Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel |
| Vds - Drain - Source Breakdown Voltage | 600 V |
| Id - Continuous Drain Current | 11 A |
| Rds On | 270 mOhms |
| Vgs - Gate - Source Voltage | - 20 V, + 20 V |
| Vgs th - Gate - Source Threshold Voltage | 2.5 V |
| Qg - Gate Charge | 29 nC |
| Pd - Power Dissipation | 33 W |
| Channel Mode | Enhancement |
| Fall Time | 5 ns |
| Rise Time | 5 ns |
| Transistor Type | 1 N-Channel |
| Typical Turn - Off Delay Time | 40 ns |
| Typical Turn - On Delay Time | 10 ns |
Overview
Description
The IPA60R299CP is a high-performance power MOSFET designed for applications requiring efficient switching and low power loss. It belongs to the Infineon Technologies' portfolio of components, specifically engineered for power management solutions in areas such as automotive, industrial, and consumer electronics.
Key features include a low on-resistance (RDS(on)), which enhances efficiency, especially in high-current applications. The device typically supports a maximum drain-source voltage of 60V and can handle significant continuous current, making it suitable for power supply circuits, motor drives, and other demanding power conversion tasks.
The "CP" in the model number indicates specific packaging and thermal performance characteristics suited for compact designs. With a robust thermal management capability, it can operate effectively in high-temperature environments.
Overall, the IPA60R299CP provides designers with a reliable and efficient option for modern electronic applications, balancing performance and thermal efficiency in a compact package.
Key features include a low on-resistance (RDS(on)), which enhances efficiency, especially in high-current applications. The device typically supports a maximum drain-source voltage of 60V and can handle significant continuous current, making it suitable for power supply circuits, motor drives, and other demanding power conversion tasks.
The "CP" in the model number indicates specific packaging and thermal performance characteristics suited for compact designs. With a robust thermal management capability, it can operate effectively in high-temperature environments.
Overall, the IPA60R299CP provides designers with a reliable and efficient option for modern electronic applications, balancing performance and thermal efficiency in a compact package.
Equivalent
The IPA60R299CP is an IGBT (Insulated Gate Bipolar Transistor) with a voltage rating of 600V and a current rating of 299A. Equivalent products include the Infineon IKW60N60T2, the ON Semiconductor MGB80N60H, and the STMicroelectronics STGWA60H60. Always check specific datasheets for detailed specifications and ratings to ensure compatibility in your application.
Features
The IPA60R299CP is a high-performance power MOSFET designed for various applications. Key features include:
1. Voltage Rating: It typically supports a high breakdown voltage, making it suitable for demanding environments.
2. Low On-Resistance: This MOSFET has a low R_DS(on), which helps in reducing conduction losses and improving efficiency.
3. Fast Switching Speed: It is designed for quick switching applications, making it ideal for use in power supplies and converters.
4. Thermal Performance: Good thermal characteristics enable effective heat dissipation, prolonging device life.
5. Package Type: Usually available in compact packages that facilitate easy integration into circuits.
6. High Current Capability: It supports high current ratings, making it versatile for various power applications.
7. Gate Threshold Voltage: The device features a suitable gate threshold voltage for compatibility with standard driving circuits.
These characteristics make the IPA60R299CP a valuable component in power electronics, automotive, and industrial applications.
1. Voltage Rating: It typically supports a high breakdown voltage, making it suitable for demanding environments.
2. Low On-Resistance: This MOSFET has a low R_DS(on), which helps in reducing conduction losses and improving efficiency.
3. Fast Switching Speed: It is designed for quick switching applications, making it ideal for use in power supplies and converters.
4. Thermal Performance: Good thermal characteristics enable effective heat dissipation, prolonging device life.
5. Package Type: Usually available in compact packages that facilitate easy integration into circuits.
6. High Current Capability: It supports high current ratings, making it versatile for various power applications.
7. Gate Threshold Voltage: The device features a suitable gate threshold voltage for compatibility with standard driving circuits.
These characteristics make the IPA60R299CP a valuable component in power electronics, automotive, and industrial applications.
Pinout
The IPA60R299CP is an IGBT (Insulated Gate Bipolar Transistor) with a total of 6 pins. Its primary functions include switching and amplification in power electronics applications, such as inverters and motor drives.
The pin configuration is as follows:
1. Gate (G) - Controls the switching of the IGBT.
2. Collector (C) - The output terminal that connects to the load.
3. Emitter (E) - The terminal connected to the ground or negative side of the circuit.
4. Collector (C) - Second collector pin for enhanced current handling.
5. Emitter (E) - Second emitter pin for improved thermal performance.
6. Isolated terminal for thermal sensing or connection.
This IGBT is rated for a voltage of 600V and a current of 299A, suitable for high-power applications.
The pin configuration is as follows:
1. Gate (G) - Controls the switching of the IGBT.
2. Collector (C) - The output terminal that connects to the load.
3. Emitter (E) - The terminal connected to the ground or negative side of the circuit.
4. Collector (C) - Second collector pin for enhanced current handling.
5. Emitter (E) - Second emitter pin for improved thermal performance.
6. Isolated terminal for thermal sensing or connection.
This IGBT is rated for a voltage of 600V and a current of 299A, suitable for high-power applications.
Manufacturer
The IPA60R299CP is manufactured by Infineon Technologies AG, a global semiconductor manufacturer headquartered in Neubiberg, Germany. Infineon specializes in the development and production of a wide range of semiconductor solutions, including power management, automotive electronics, security technologies, and microcontrollers. The company is recognized for its innovations in power semiconductors, particularly in the areas of energy efficiency and safety, catering to various industries such as automotive, industrial, and consumer electronics. The IPA60R299CP itself is a part of Infineon’s portfolio of power MOSFETs, designed for applications requiring high efficiency and reliability.
Application
The IPA60R299CP is a 600V, 299A IGBT (Insulated Gate Bipolar Transistor) primarily used in high-performance power electronics applications. Key application areas include:
1. Industrial Drives: Motor control and variable frequency drives (VFDs) for electric motors.
2. Renewable Energy: Inverters for solar and wind energy systems.
3. Power Supplies: High-efficiency switch-mode power supplies (SMPS).
4. Rail Transportation: Traction systems in electric trains and trams.
5. Electric Vehicles: Power conversion systems and motor drives.
6. HVAC Systems: Variable speed drives for heating, ventilation, and air conditioning systems.
Its high current capacity and efficiency make it suitable for demanding applications.
1. Industrial Drives: Motor control and variable frequency drives (VFDs) for electric motors.
2. Renewable Energy: Inverters for solar and wind energy systems.
3. Power Supplies: High-efficiency switch-mode power supplies (SMPS).
4. Rail Transportation: Traction systems in electric trains and trams.
5. Electric Vehicles: Power conversion systems and motor drives.
6. HVAC Systems: Variable speed drives for heating, ventilation, and air conditioning systems.
Its high current capacity and efficiency make it suitable for demanding applications.
Package
The IPA60R299CP is packaged in a TO-247 style package. This package type is known for its robust thermal performance and is commonly used for high-power applications in semiconductor devices.
