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IPA60R380E6
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ManufacturerInfineon Technologies
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Mfr. Part #IPA60R380E6
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Datasheet IPA60R380E6 DataSheet
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In Stock4852
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Specifications
| Attribute | Value |
| Packaging | Tube |
| Brand | Infineon Technologies |
| Product Type | MOSFETs |
| Subcategory | Transistors |
| Factory Pack Quantity | 500 |
| Technology | Si |
| Mounting Type | Through Hole |
| Package / Case | TO-220FP-3 |
| Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel |
| Vds - Drain - Source Breakdown Voltage | 600 V |
| Id - Continuous Drain Current | 10.6 A |
| Rds On | 380 mOhms |
| Vgs - Gate - Source Voltage | - 20 V, + 20 V |
| Vgs th - Gate - Source Threshold Voltage | 3.5 V |
| Qg - Gate Charge | 32 nC |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Pd - Power Dissipation | 31 W |
| Channel Mode | Enhancement |
| Tradename | CoolMOS |
| Configuration | Single |
| Fall Time | 8 nS |
| Height | 16.15 mm |
| Length | 10.65 mm |
| Rise Time | 9 nS |
| Series | CoolMOS E6 |
| Transistor Type | 1 N-Channel |
| Typical Turn - Off Delay Time | 56 nS |
| Width | 4.85 mm |
| Part # Aliases | SP000795300 IPA6R38E6XK IPA60R380E6XKSA1 |
| Unit Weight | 0.068784 oz |
Overview
Description
The IPA60R380E6 is an Insulated Gate Bipolar Transistor (IGBT) tailored for high-performance applications in power electronics. It features a voltage rating of 600V and a continuous current capability of 60A, making it suitable for various uses, including inverters, motor drives, and power supplies.
This IGBT is designed with a low on-state voltage drop, ensuring high efficiency and reduced power losses during operation. Its fast switching capabilities enhance the overall performance of power conversion systems, allowing for higher frequency operations.
The device also incorporates a robust thermal management design, enabling it to maintain performance in demanding environments. The IPA60R380E6 is typically housed in a TO-247 package, facilitating easy integration into electronic circuits.
Overall, this IGBT is ideal for industrial applications where efficiency, reliability, and high power handling are critical.
This IGBT is designed with a low on-state voltage drop, ensuring high efficiency and reduced power losses during operation. Its fast switching capabilities enhance the overall performance of power conversion systems, allowing for higher frequency operations.
The device also incorporates a robust thermal management design, enabling it to maintain performance in demanding environments. The IPA60R380E6 is typically housed in a TO-247 package, facilitating easy integration into electronic circuits.
Overall, this IGBT is ideal for industrial applications where efficiency, reliability, and high power handling are critical.
Equivalent
The IPA60R380E6 chip is an N-channel MOSFET. Equivalent products include the IRF3808, IRF3708, and STP40NF6. Always verify specifications like voltage, current rating, and RDS(on) to ensure compatibility for your specific application.
Features
The IPA60R380E6 is a N-channel power MOSFET from Infineon Technologies, designed for high-performance applications. Key features include:
- Voltage Rating: It has a maximum drain-source voltage (V_DS) of 600V, making it suitable for high-voltage applications.
- Current Rating: The device can handle a continuous drain current (I_D) of up to 38A, providing robust performance in power management.
- R_DS(on): The on-resistance is low, typically around 0.38 ohms, reducing conduction losses and improving efficiency.
- Switching Speed: It offers fast switching capabilities, making it ideal for applications in switch-mode power supplies and converters.
- Thermal Performance: The package is designed for effective thermal management, allowing it to operate in demanding environments.
- Package Type: It is available in a TO-247 package, which facilitates heat dissipation and ease of mounting in various applications.
Overall, the IPA60R380E6 is suitable for applications in industrial, automotive, and consumer electronics sectors.
- Voltage Rating: It has a maximum drain-source voltage (V_DS) of 600V, making it suitable for high-voltage applications.
- Current Rating: The device can handle a continuous drain current (I_D) of up to 38A, providing robust performance in power management.
- R_DS(on): The on-resistance is low, typically around 0.38 ohms, reducing conduction losses and improving efficiency.
- Switching Speed: It offers fast switching capabilities, making it ideal for applications in switch-mode power supplies and converters.
- Thermal Performance: The package is designed for effective thermal management, allowing it to operate in demanding environments.
- Package Type: It is available in a TO-247 package, which facilitates heat dissipation and ease of mounting in various applications.
Overall, the IPA60R380E6 is suitable for applications in industrial, automotive, and consumer electronics sectors.
Pinout
The IPA60R380E6 is an N-channel MOSFET from Infineon Technologies, specifically designed for power applications. It features a total of 6 pins. The pin functions are as follows:
1. Gate (G): Controls the switching of the MOSFET.
2. Drain (D): The output terminal where the load is connected.
3. Source (S): The terminal connected to ground or the negative side of the circuit.
The package type is typically TO-247, which provides efficient thermal management for high-power applications. The device is rated for a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of up to 38A, making it suitable for applications like power supplies, motor drives, and inverters. Overall, the IPA60R380E6 is designed for high efficiency and reliable performance in demanding environments.
1. Gate (G): Controls the switching of the MOSFET.
2. Drain (D): The output terminal where the load is connected.
3. Source (S): The terminal connected to ground or the negative side of the circuit.
The package type is typically TO-247, which provides efficient thermal management for high-power applications. The device is rated for a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of up to 38A, making it suitable for applications like power supplies, motor drives, and inverters. Overall, the IPA60R380E6 is designed for high efficiency and reliable performance in demanding environments.
Manufacturer
The IPA60R380E6 is manufactured by Infineon Technologies, a leading global semiconductor company. Founded in 1999 and headquartered in Neubiberg, Germany, Infineon specializes in providing semiconductor and system solutions for various applications, including automotive, industrial, and consumer electronics.
Infineon is known for its innovations in power semiconductors, microcontrollers, and sensors, playing a significant role in enabling energy efficiency, connectivity, and security in modern technologies. The IPA60R380E6 is a part of their IGBT (Insulated Gate Bipolar Transistor) family, designed for high-performance applications in renewable energy systems, motor drives, and industrial automation.
As a prominent player in the semiconductor industry, Infineon focuses on developing cutting-edge technologies to support the transition to a more sustainable and connected world. The company's extensive portfolio and commitment to innovation make it a key contributor to advancements in various sectors, including electric vehicles, renewable energy solutions, and smart manufacturing.
Infineon is known for its innovations in power semiconductors, microcontrollers, and sensors, playing a significant role in enabling energy efficiency, connectivity, and security in modern technologies. The IPA60R380E6 is a part of their IGBT (Insulated Gate Bipolar Transistor) family, designed for high-performance applications in renewable energy systems, motor drives, and industrial automation.
As a prominent player in the semiconductor industry, Infineon focuses on developing cutting-edge technologies to support the transition to a more sustainable and connected world. The company's extensive portfolio and commitment to innovation make it a key contributor to advancements in various sectors, including electric vehicles, renewable energy solutions, and smart manufacturing.
Application
The IPA60R380E6 is an N-channel MOSFET widely used in various application areas, including:
1. Power Conversion: In DC-DC converters and power supplies for efficient voltage regulation.
2. Motor Control: For driving electric motors in industrial automation and electric vehicles.
3. Switching Applications: In high-speed switching circuits for telecommunications and data centers.
4. Inverters: In renewable energy systems like solar inverters and UPS systems.
5. Consumer Electronics: For power management in devices such as computers and smartphones.
Its capability to handle high currents and voltages makes it suitable for both industrial and commercial applications.
1. Power Conversion: In DC-DC converters and power supplies for efficient voltage regulation.
2. Motor Control: For driving electric motors in industrial automation and electric vehicles.
3. Switching Applications: In high-speed switching circuits for telecommunications and data centers.
4. Inverters: In renewable energy systems like solar inverters and UPS systems.
5. Consumer Electronics: For power management in devices such as computers and smartphones.
Its capability to handle high currents and voltages makes it suitable for both industrial and commercial applications.
Package
The IPA60R380E6 is housed in a TO-247 package type. This package is commonly used for high-power applications, providing good thermal performance and efficient heat dissipation.
