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IPB017N10N5LFATMA1
+BOMMOSFET N-CH 100V 180A TO263-7
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ManufacturerInfineon Technologies
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Mfr. Part #IPB017N10N5LFATMA1
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In Stock9420
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Specifications
| Attribute | Value |
| Supplier | Infineon Technologies |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | OptiMOS™-5 |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain(Id) @ 25°C | 180A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 1.7mOhm @ 100A, 10V |
| Vgs(th)(Max) @ Id | 4.1V @ 270µA |
| Gate Charge(Qg)(Max) @ Vgs | 195 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 840 pF @ 50 V |
| Power Dissipation (Max) | 313W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO263-7 |
