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IPB200N15N3G
+BOM-
ManufacturerInfineon Technologies
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Mfr. Part #IPB200N15N3G
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In Stock7942
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Specifications
| Attribute | Value |
| Manufacturer | Infineon Technologies |
| Package / Case | TO-263-3 |
| Operating Temperature | -55℃~+175℃@(Tj) |
| Rds(on) | 20mΩ@50A,10V |
| Drain to Source Voltage (Vdss) | 150V |
| Pd - Power Dissipation | 150W |
| Current - Continuous Drain(Id) | 50A |
| Input Capacitance(Ciss @ Vds) | 1.82nF@75V |
| Gate Threshold Voltage (Vgs(th) @ Id) | 4V@90uA |
| Gate Charge(Qg) | 31nC@10V |
| Number | 1 N-channel |
Overview
Description
The IPB200N15N3G is a high-performance N-channel MOSFET from Infineon Technologies, designed for power management applications. It features a low on-resistance (R_DS(on)), which minimizes power losses and improves efficiency in various electronic circuits, particularly in switching power supplies, motor drives, and automotive applications.
With a voltage rating of 150V and a current rating of 200A, it is suitable for high-voltage and high-current applications. The device is packaged in a robust TO-220 form factor, ensuring good thermal dissipation.
Key specifications include a low gate threshold voltage, fast switching speeds, and high reliability. It is typically used in applications requiring efficient power conversion, such as inverters, converters, and industrial automation systems.
Overall, the IPB200N15N3G is an excellent choice for engineers looking to enhance the performance and efficiency of their electronic designs.
With a voltage rating of 150V and a current rating of 200A, it is suitable for high-voltage and high-current applications. The device is packaged in a robust TO-220 form factor, ensuring good thermal dissipation.
Key specifications include a low gate threshold voltage, fast switching speeds, and high reliability. It is typically used in applications requiring efficient power conversion, such as inverters, converters, and industrial automation systems.
Overall, the IPB200N15N3G is an excellent choice for engineers looking to enhance the performance and efficiency of their electronic designs.
Equivalent
The IPB200N15N3G is a N-channel MOSFET commonly used in power applications. Equivalent products include the IRF3205, FQP200N15, and STP200N15. When looking for replacements, consider specifications like voltage rating, current handling, R_DS(on), and package type to ensure compatibility. Always verify through datasheets for exact equivalency.
Features
The IPB200N15N3G is a high-performance N-channel MOSFET designed for power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 150V, allowing for use in high-voltage applications.
2. Current Rating: Capable of handling a continuous drain current (I_D) of 200A, making it suitable for high-current applications.
3. Low On-Resistance: It features a low R_DS(on) value, which enhances efficiency by minimizing power loss during operation.
4. Fast Switching Speed: This MOSFET offers quick switching capabilities, ideal for applications requiring rapid on/off control.
5. Thermal Performance: With a high thermal conductivity, it can effectively dissipate heat, ensuring reliability and longevity.
6. TO-220 Package: Encased in a TO-220 package, it facilitates easy mounting and heat dissipation.
These attributes make the IPB200N15N3G suitable for use in power management, motor drives, and various industrial applications.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 150V, allowing for use in high-voltage applications.
2. Current Rating: Capable of handling a continuous drain current (I_D) of 200A, making it suitable for high-current applications.
3. Low On-Resistance: It features a low R_DS(on) value, which enhances efficiency by minimizing power loss during operation.
4. Fast Switching Speed: This MOSFET offers quick switching capabilities, ideal for applications requiring rapid on/off control.
5. Thermal Performance: With a high thermal conductivity, it can effectively dissipate heat, ensuring reliability and longevity.
6. TO-220 Package: Encased in a TO-220 package, it facilitates easy mounting and heat dissipation.
These attributes make the IPB200N15N3G suitable for use in power management, motor drives, and various industrial applications.
Pinout
The IPB200N15N3G is an N-channel MOSFET with a pin count of 4. The pin configuration and their functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to this pin allows current to flow between the drain and source.
2. Drain (D): This is the terminal where the current flows out of the MOSFET. It connects to the load in a circuit.
3. Source (S): This pin is the terminal where current enters the MOSFET. It is typically connected to ground in low-side switching applications.
4. Tab (T): The tab serves as a thermal and mechanical connection for the device, often connecting to the source for heat dissipation.
The IPB200N15N3G is designed for high-efficiency switching applications, providing low on-resistance and fast switching capabilities.
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to this pin allows current to flow between the drain and source.
2. Drain (D): This is the terminal where the current flows out of the MOSFET. It connects to the load in a circuit.
3. Source (S): This pin is the terminal where current enters the MOSFET. It is typically connected to ground in low-side switching applications.
4. Tab (T): The tab serves as a thermal and mechanical connection for the device, often connecting to the source for heat dissipation.
The IPB200N15N3G is designed for high-efficiency switching applications, providing low on-resistance and fast switching capabilities.
Manufacturer
The IPB200N15N3G is manufactured by Infineon Technologies AG. Infineon is a global semiconductor company based in Germany that specializes in the design and manufacturing of a wide range of semiconductor products. Their offerings include power semiconductors, microcontrollers, sensors, and automotive ICs, among others.
Infineon serves various sectors, including automotive, industrial, and consumer electronics, focusing on applications that enhance energy efficiency, connectivity, and security. The company plays a significant role in developing technologies for renewable energy, electric mobility, and the Internet of Things (IoT).
The specific component IPB200N15N3G is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high efficiency and performance in power applications, making it suitable for use in automotive and industrial systems where efficient power management is critical. Infineon is recognized for its innovation and commitment to sustainable technology solutions.
Infineon serves various sectors, including automotive, industrial, and consumer electronics, focusing on applications that enhance energy efficiency, connectivity, and security. The company plays a significant role in developing technologies for renewable energy, electric mobility, and the Internet of Things (IoT).
The specific component IPB200N15N3G is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high efficiency and performance in power applications, making it suitable for use in automotive and industrial systems where efficient power management is critical. Infineon is recognized for its innovation and commitment to sustainable technology solutions.
Application
The IPB200N15N3G is an N-channel MOSFET primarily used in various power applications. Its application areas include:
1. Automotive: Used in electric vehicle powertrains, battery management systems, and automotive lighting.
2. Industrial: Employed in motor drives, power supplies, and HVAC systems.
3. Consumer Electronics: Utilized in power converters and chargers for devices.
4. Renewable Energy: Applied in solar inverters and wind turbine systems.
5. Telecommunications: Used in RF amplifiers and power management circuits.
This MOSFET is valued for its high efficiency and thermal performance in switching applications.
1. Automotive: Used in electric vehicle powertrains, battery management systems, and automotive lighting.
2. Industrial: Employed in motor drives, power supplies, and HVAC systems.
3. Consumer Electronics: Utilized in power converters and chargers for devices.
4. Renewable Energy: Applied in solar inverters and wind turbine systems.
5. Telecommunications: Used in RF amplifiers and power management circuits.
This MOSFET is valued for its high efficiency and thermal performance in switching applications.
Package
The IPB200N15N3G is packaged in a TO-220 configuration. This package type is designed for high power applications, offering good thermal performance and ease of mounting for heat dissipation.
