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IPB80R290C3A
+BOMN-CHANNEL POWER MOSFET
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ManufacturerInfineon Technologies
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Mfr. Part #IPB80R290C3A
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Datasheet IPB80R290C3A DataSheet
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Package PG-TO263-3
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In Stock4979
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Specifications
| Attribute | Value |
| Package | Bulk |
| Series | Automotive, AEC-Q101, CoolMOS™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 800 V |
| Current-ContinuousDrain(Id)@25°C | 17A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 290mOhm @ 11A, 10V |
| Vgs(th)(Max)@Id | 3.9V @ 1mA |
| GateCharge(Qg)(Max)@Vgs | 117 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 2300 pF @ 100 V |
| PowerDissipation(Max) | 227W (Tc) |
| OperatingTemperature | -40°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | PG-TO263-3-2 |
Overview
Description
The IPB80R290C3A is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed by Infineon Technologies. It belongs to the CoolMOS C3 series, known for high efficiency and low power loss, making them suitable for power conversion applications. This component is specifically an N-channel MOSFET, which means it uses electrons as carriers for conducting electricity.
The IPB80R290C3A offers a breakdown voltage of 800V, allowing it to handle high-voltage applications. Its low on-resistance (R_DS(on)) of about 0.29 ohms ensures minimal energy loss during operation, improving efficiency. This characteristic is particularly beneficial in applications like power supplies, lighting, and industrial electronics.
The MOSFET is designed for high-speed switching and features robust avalanche and dv/dt capabilities, contributing to its reliability under demanding conditions. The TO-263 package provides efficient thermal performance, aiding in heat dissipation.
Overall, the IPB80R290C3A is ideal for applications requiring high voltage and efficiency, with superior switching performance and thermal management.
The IPB80R290C3A offers a breakdown voltage of 800V, allowing it to handle high-voltage applications. Its low on-resistance (R_DS(on)) of about 0.29 ohms ensures minimal energy loss during operation, improving efficiency. This characteristic is particularly beneficial in applications like power supplies, lighting, and industrial electronics.
The MOSFET is designed for high-speed switching and features robust avalanche and dv/dt capabilities, contributing to its reliability under demanding conditions. The TO-263 package provides efficient thermal performance, aiding in heat dissipation.
Overall, the IPB80R290C3A is ideal for applications requiring high voltage and efficiency, with superior switching performance and thermal management.
Equivalent
The IPB80R290C3A is a power MOSFET produced by Infineon Technologies. Equivalent products from other manufacturers could include:
1. NXP PSMN1R8-80YS
2. STMicroelectronics STP80NF03L
3. Vishay Siliconix SiHP33N60E
4. ON Semiconductor FDPF33N25T
Ensure to verify electrical characteristics and package types as they might slightly differ. Always check the datasheets for detailed specifications to ensure compatibility with your specific application.
1. NXP PSMN1R8-80YS
2. STMicroelectronics STP80NF03L
3. Vishay Siliconix SiHP33N60E
4. ON Semiconductor FDPF33N25T
Ensure to verify electrical characteristics and package types as they might slightly differ. Always check the datasheets for detailed specifications to ensure compatibility with your specific application.
Features
The IPB80R290C3A is a power MOSFET from Infineon Technologies, designed for high efficiency and performance in various applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_ds) of 800V, making it suitable for high-voltage applications.
2. Current Rating: Capable of handling continuous drain current up to 14A at 25°C (with proper cooling).
3. R_DS(on): The device offers a low on-state resistance, typically around 0.29 Ohm, minimizing power loss and improving efficiency.
4. Technology: Utilizes Infineon’s CoolMOS™ technology, which enhances switching performance and reduces energy losses.
5. Package: Available in the TO-220 package, which provides good thermal performance and ease of mounting.
6. Applications: Commonly used in power supply units, lighting systems, and industrial applications due to its robust design and high efficiency.
7. Thermal Performance: Features superior thermal characteristics, aiding in reliable operation at high temperatures.
These features make the IPB80R290C3A suitable for efficient power management in demanding environments.
1. Voltage Rating: It has a maximum drain-source voltage (V_ds) of 800V, making it suitable for high-voltage applications.
2. Current Rating: Capable of handling continuous drain current up to 14A at 25°C (with proper cooling).
3. R_DS(on): The device offers a low on-state resistance, typically around 0.29 Ohm, minimizing power loss and improving efficiency.
4. Technology: Utilizes Infineon’s CoolMOS™ technology, which enhances switching performance and reduces energy losses.
5. Package: Available in the TO-220 package, which provides good thermal performance and ease of mounting.
6. Applications: Commonly used in power supply units, lighting systems, and industrial applications due to its robust design and high efficiency.
7. Thermal Performance: Features superior thermal characteristics, aiding in reliable operation at high temperatures.
These features make the IPB80R290C3A suitable for efficient power management in demanding environments.
Pinout
The IPB80R290C3A is a power MOSFET manufactured by Infineon Technologies. It typically comes in a TO-263-3 package, which means it has three pins. The pin configuration and functions are as follows:
1. Gate (G): The gate terminal is used to control the MOSFET. A voltage applied to this pin turns the MOSFET on or off.
2. Drain (D): The drain is the terminal through which the main current flows from the MOSFET. It is connected to the high voltage side of the circuit.
3. Source (S): The source terminal is where the current exits the MOSFET. It is typically connected to the ground or the lower potential side of the circuit.
The IPB80R290C3A is designed for high-efficiency power conversion applications and features low on-state resistance and fast switching capability. It is suitable for use in power supply units, motor drives, and other applications requiring efficient power management.
1. Gate (G): The gate terminal is used to control the MOSFET. A voltage applied to this pin turns the MOSFET on or off.
2. Drain (D): The drain is the terminal through which the main current flows from the MOSFET. It is connected to the high voltage side of the circuit.
3. Source (S): The source terminal is where the current exits the MOSFET. It is typically connected to the ground or the lower potential side of the circuit.
The IPB80R290C3A is designed for high-efficiency power conversion applications and features low on-state resistance and fast switching capability. It is suitable for use in power supply units, motor drives, and other applications requiring efficient power management.
Manufacturer
The IPB80R290C3A is manufactured by Infineon Technologies. Infineon is a German semiconductor manufacturer that specializes in a wide range of electronic components and systems. The company is well-known for producing products that serve the automotive, industrial, and multi-market sectors, focusing on power semiconductors, microcontrollers, sensors, and security solutions. Infineon is recognized for its innovation in energy efficiency, mobility, and security technologies, making it a key player in the global semiconductor industry.
Application
The IPB80R290C3A is a power MOSFET commonly used in various applications due to its efficiency and reliability. Its primary application areas include:
1. Switch Mode Power Supplies (SMPS): Utilized for efficient power conversion.
2. DC-DC Converters: Enhances performance in converting DC power levels.
3. Motor Drives: Offers robust control for motors in industrial and automotive applications.
4. Inverters: Suitable for solar inverters and uninterruptible power supplies (UPS).
5. LED Drivers: Efficiently controls LED lighting applications.
6. Battery Management Systems: Ensures efficient energy use and management.
These applications benefit from the IPB80R290C3A's low on-resistance and high-speed switching capabilities.
1. Switch Mode Power Supplies (SMPS): Utilized for efficient power conversion.
2. DC-DC Converters: Enhances performance in converting DC power levels.
3. Motor Drives: Offers robust control for motors in industrial and automotive applications.
4. Inverters: Suitable for solar inverters and uninterruptible power supplies (UPS).
5. LED Drivers: Efficiently controls LED lighting applications.
6. Battery Management Systems: Ensures efficient energy use and management.
These applications benefit from the IPB80R290C3A's low on-resistance and high-speed switching capabilities.
Package
The IPB80R290C3A is a power MOSFET produced by Infineon Technologies, and it comes in a TO-263 package type, also known as D2PAK.
