IPD30N06S2L-13

Images are for reference only

IPD30N06S2L-13

+BOM

MOSFET N-CH 55V 30A TO252-3

365 Days Quality Guarantee

7*24 hours service quarantee

90-day after-sales guarantee

Genuine Product Guarantee

Specifications

Attribute Value
Package Tape & Reel (TR),Cut Tape (CT)
Series OptiMOS™
ProductStatus Discontinued at Digi-Key
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 55 V
Current-ContinuousDrain(Id)@25°C 30A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 13mOhm @ 30A, 10V
Vgs(th)(Max)@Id 2V @ 80µA
GateCharge(Qg)(Max)@Vgs 69 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 1800 pF @ 25 V
PowerDissipation(Max) 136W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Surface Mount
SupplierDevicePackage PG-TO252-3-11

Overview

Description

The IPD30N06S2L-13 is a N-channel MOSFET designed for applications that require efficient power management. It features a low on-state resistance, which minimizes power loss and enhances system efficiency. With a breakdown voltage of approximately 60V and a continuous drain current capability of about 30A, it is suitable for various power switching applications. The device is housed in a TO-252 package, making it compact and easy to incorporate into circuit designs. Additionally, the MOSFET offers fast switching speeds, which are beneficial for applications like DC-DC converters, motor drives, and other high-frequency operations. Its robust design ensures reliability and longevity in demanding environments.

Equivalent

The IPD30N06S2L-13 is a N-channel MOSFET. Equivalent products can include similar N-channel MOSFETs with comparable voltage and current ratings. Some potential equivalents are:
1. IRFZ44N
2. IRLZ44N
3. STP30N06
It's important to verify specific parameters such as V_ds, I_d, R_ds(on), and package type to ensure compatibility for your application.

Features

The IPD30N06S2L-13 is a part of Infineon's MOSFET lineup, featuring the following key attributes:
1. N-channel MOSFET: It is designed for switching and amplification applications.
2. Low ON-resistance: Provides efficient power handling with reduced energy losses.
3. Voltage and Current Ratings: Typically supports a maximum drain-source voltage (V_DS) of 60V and a continuous drain current (I_D) of around 30A, making it suitable for various moderate power applications.
4. Fast Switching Speed: Enhances performance in high-speed applications.
5. SMD Package: Comes in a standard surface-mount device (SMD) package, allowing for compact PCB designs.
6. Thermal Performance: Optimized for better thermal management, often featuring a robust thermal design for enhanced reliability.
7. Application Versatility: Ideal for use in automotive, industrial, and consumer electronics where efficient power management is essential.
These features make the IPD30N06S2L-13 a versatile and reliable choice for a range of applications requiring efficient power control and management.

Pinout

The IPD30N06S2L-13 is a power MOSFET from Infineon Technologies. It typically comes in a TO-252 package, also known as DPAK, which has three pins. The pin configuration is as follows:
1. Pin 1 (Gate): This is the gate terminal, which controls the MOSFET's switching. By applying a voltage to this pin, you can turn the MOSFET on or off.
2. Pin 2 (Drain): This is the drain terminal, through which the main current flows from drain to source when the MOSFET is turned on.
3. Pin 3 (Source): This is the source terminal, which is the return path for the current flowing through the MOSFET.
Additionally, the tab on the package is internally connected to the drain pin and aids in heat dissipation. The IPD30N06S2L-13 is designed for low voltage applications and is particularly suitable for automotive and industrial applications due to its low on-resistance and high-speed switching capabilities.

Manufacturer

The IPD30N06S2L-13 is manufactured by Infineon Technologies. Infineon is a German semiconductor company that specializes in designing and manufacturing a wide range of semiconductor solutions. These solutions are used in various applications such as automotive, industrial power control, power management, chip card and security, and more. Infineon is known for its innovative approach and its focus on energy efficiency, mobility, and security across its product offerings.

Application

The IPD30N06S2L-13 is a power MOSFET known for its low on-resistance and high efficiency. It is commonly used in various applications, including:
1. Automotive Systems: For switching and control in automotive electronics such as electric power steering and fuel injection systems.
2. Power Supply Units: Used in DC-DC converters and power supplies for efficient energy conversion.
3. Motor Drives: Suitable for controlling small to medium-sized motors in industrial and consumer applications.
4. Lighting Systems: Utilized in LED drivers for efficient light management.
5. Battery Management: Employed in battery charging and discharging applications for effective power management.
These applications leverage the MOSFET’s efficiency, thermal performance, and reliability.

Package

The IPD30N06S2L-13 is a MOSFET, and it typically comes in a TO-252 package type, also known as DPAK. This package is designed for surface-mount applications, offering a balance between thermal performance and space efficiency.

Products related to IPD30N06S2L-13