IPD30N06S2L-23

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IPD30N06S2L-23

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IPD30N06 - 55V-60V N-CHANNEL AUT

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Specifications

Attribute Value
Package / Case Bulk
Series OptiMOS™
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V
Current - Continuous Drain(Id) @ 25°C 30A (Tc)
Drive Voltage(Max Rds On Min Rds On) 4.5V, 10V
Rds On(Max) @ Id Vgs 23mOhm @ 22A, 10V
Vgs(th)(Max) @ Id 2V @ 50µA
Gate Charge(Qg)(Max) @ Vgs 42 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 1091 pF @ 25 V
Power Dissipation (Max) 100W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3-11

Overview

Description

The IPD30N06S2L-23 is a 30A, 60V N-channel MOSFET from Infineon’s OptiMOS™ Power-Transistor series. Designed for high efficiency in switching applications, it features:
- Low on-resistance (RDS(on)): 23mΩ (max) at VGS=10V, reducing conduction losses.
- Fast switching: Optimized for high-frequency operations like DC-DC converters, motor control, and power supplies.
- Robust design: Avalanche-rated and qualified for automotive (AEC-Q101) and industrial use.
- Compact package: D2PAK (TO-263) for efficient thermal performance.
Ideal for 12V–48V systems, it balances performance and reliability. Check datasheets for detailed specs.

Equivalent

Equivalent products to the IPD30N06S2L-23 (30A, 60V N-channel MOSFET) include:
- IRF3205 (55V, 110A)
- STP55NF06L (60V, 55A)
- FQP30N06L (60V, 32A)
- IRLB8743PbF (30V, 100A)
Check datasheets for exact specs like RDS(on) and gate charge before substitution. These are common alternatives but may vary in performance.

Features

The IPD30N06S2L-23 is a 30V, 60A N-channel MOSFET with the following key features:
- Low On-Resistance (RDS(on)): 2.3 mΩ (max) at VGS = 10V
- High Current Handling: Up to 60A continuous drain current (ID)
- Fast Switching: Optimized for high-efficiency power applications
- Low Gate Charge (QG): Enhances switching performance
- Avalanche Energy Rated: Improved ruggedness in inductive loads
- Logic-Level Gate Drive: Compatible with 4.5V drive (VGS(th) ~1-2V)
- Package: TO-252 (DPAK), surface-mount design
Ideal for DC-DC converters, motor control, and power management in automotive/industrial systems.

Pinout

The IPD30N06S2L-23 is a 30A, 60V N-channel MOSFET in a TO-252 (DPAK) package with 3 pins:
1. Gate (G) – Controls the switching operation.
2. Drain (D) – Connects to the load (high current path).
3. Source (S) – Ground/reference terminal.
Key features:
- Low on-resistance (RDS(on)): 23mΩ max at VGS = 10V.
- Fast switching for power applications (e.g., motor control, DC-DC converters).
- Logic-level compatible (fully enhanced at VGS = 4.5V).
Package: DPAK (TO-252) with a thermal pad for heat dissipation.

Package

The IPD30N06S2L-23 is a power MOSFET housed in a TO-252 (DPAK) surface-mount package. This package is compact, suitable for high-current applications, and features a thermal pad for efficient heat dissipation. It is commonly used in power management circuits.

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