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IPD80R1K0CE
+BOMMOSFETs N-Ch 800V 5.7A DPAK-2
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ManufacturerInfineon Technologies
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Mfr. Part #IPD80R1K0CE
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Datasheet IPD80R1K0CE DataSheet
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In Stock23919
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Specifications
| Attribute | Value |
| Packaging | MouseReel |
| Standard Pack Qty | 2500 |
Overview
Description
The IPD80R1K0CE is a power MOSFET designed for high-efficiency switching applications. It is part of the OptiMOS™ series by Infineon Technologies, which are known for their low on-resistance and high-current carrying capabilities. This particular model features a breakdown voltage of 80V, making it suitable for various power management applications, including DC-DC converters, motor drives, and power tools.
Key features of the IPD80R1K0CE include a low RDS(on) value, which minimizes conduction losses, and a fast switching speed, which reduces switching losses. It is designed for efficient thermal management, contributing to enhanced reliability and longevity in high-performance applications.
The MOSFET comes in a TO-252 package, offering a compact footprint suitable for space-constrained designs. Additionally, it supports high-frequency operation, making it ideal for applications requiring rapid switching cycles. This component is particularly advantageous for designers focused on maximizing efficiency and performance in electronic systems.
Key features of the IPD80R1K0CE include a low RDS(on) value, which minimizes conduction losses, and a fast switching speed, which reduces switching losses. It is designed for efficient thermal management, contributing to enhanced reliability and longevity in high-performance applications.
The MOSFET comes in a TO-252 package, offering a compact footprint suitable for space-constrained designs. Additionally, it supports high-frequency operation, making it ideal for applications requiring rapid switching cycles. This component is particularly advantageous for designers focused on maximizing efficiency and performance in electronic systems.
Equivalent
The IPD80R1K0CE is a power MOSFET, and equivalent products are typically other MOSFETs with similar voltage, current, and on-resistance ratings. Possible equivalents might include:
1. STMicroelectronics: STP80NF10
2. ON Semiconductor: NTP80N10
3. Vishay: SIHP80N10E
It's crucial to compare the datasheets of these components to ensure they match the specifications required for your application, including threshold voltage, package type, and thermal characteristics.
1. STMicroelectronics: STP80NF10
2. ON Semiconductor: NTP80N10
3. Vishay: SIHP80N10E
It's crucial to compare the datasheets of these components to ensure they match the specifications required for your application, including threshold voltage, package type, and thermal characteristics.
Features
The IPD80R1K0CE is a power MOSFET from Infineon Technologies, designed for use in high-performance applications. Here are its key features:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 800V, making it suitable for high-voltage applications.
2. Current Capacity: The MOSFET can handle continuous drain currents up to 4.5A, depending on the thermal conditions.
3. R_DS(on): The device offers a low on-resistance (R_DS(on)) of 1.0 ohm, which reduces power losses and improves efficiency.
4. Package Type: It is available in a TO-220 package, providing good thermal performance and ease of mounting.
5. Switching Performance: The IPD80R1K0CE features fast switching speeds, aiding in efficient energy management in power circuits.
6. Thermal Characteristics: The device has a maximum junction temperature of 150°C, allowing it to operate in demanding thermal environments.
7. Applications: Typical applications include power supplies, inverters, motor drives, and other high-voltage systems.
These features make the IPD80R1K0CE suitable for high-efficiency power management applications, especially where space and thermal management are key considerations.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 800V, making it suitable for high-voltage applications.
2. Current Capacity: The MOSFET can handle continuous drain currents up to 4.5A, depending on the thermal conditions.
3. R_DS(on): The device offers a low on-resistance (R_DS(on)) of 1.0 ohm, which reduces power losses and improves efficiency.
4. Package Type: It is available in a TO-220 package, providing good thermal performance and ease of mounting.
5. Switching Performance: The IPD80R1K0CE features fast switching speeds, aiding in efficient energy management in power circuits.
6. Thermal Characteristics: The device has a maximum junction temperature of 150°C, allowing it to operate in demanding thermal environments.
7. Applications: Typical applications include power supplies, inverters, motor drives, and other high-voltage systems.
These features make the IPD80R1K0CE suitable for high-efficiency power management applications, especially where space and thermal management are key considerations.
Pinout
The IPD80R1K0CE is a power MOSFET from Infineon Technologies, typically used in power conversion applications. It features a single N-channel enhancement mode configuration. The device is housed in a TO-252 (DPAK) package, which generally has 3 pins. These pins serve the following functions:
1. Gate (G): The control terminal used to turn the MOSFET on or off.
2. Drain (D): The terminal through which the main current flows when the device is on.
3. Source (S): The terminal at which the current enters the MOSFET from the load.
Additionally, the TO-252 package has a tab that is electrically connected to the drain and is used for heat dissipation. This MOSFET is designed for high efficiency and low power loss, making it suitable for various applications, including DC-DC converters and switch-mode power supplies.
1. Gate (G): The control terminal used to turn the MOSFET on or off.
2. Drain (D): The terminal through which the main current flows when the device is on.
3. Source (S): The terminal at which the current enters the MOSFET from the load.
Additionally, the TO-252 package has a tab that is electrically connected to the drain and is used for heat dissipation. This MOSFET is designed for high efficiency and low power loss, making it suitable for various applications, including DC-DC converters and switch-mode power supplies.
Manufacturer
The IPD80R1K0CE is a product manufactured by Infineon Technologies AG. Infineon is a German semiconductor manufacturer that specializes in a wide range of electronic components and systems. The company is known for producing semiconductors that are used in various applications, including automotive, industrial power control, power management, and digital security solutions. As a leader in the semiconductor industry, Infineon focuses on innovation and efficiency, providing products that are essential in the advancement of technologies like electric vehicles, renewable energy systems, and smart devices.
Application
The IPD80R1K0CE is a power MOSFET commonly used in various applications due to its efficiency and reliability. Key application areas include:
1. Power Supplies: Used in switch-mode power supplies (SMPS) for improved conversion efficiency.
2. DC-DC Converters: Ideal for voltage regulation in various electronic devices.
3. Motor Control: Utilized in driving motors for applications like automotive and industrial automation.
4. LED Drivers: Helps in efficient power management for LED lighting systems.
5. Battery Management: Used in battery chargers and management systems for energy efficiency.
These application areas benefit from the MOSFET’s low on-resistance and high-speed switching capabilities.
1. Power Supplies: Used in switch-mode power supplies (SMPS) for improved conversion efficiency.
2. DC-DC Converters: Ideal for voltage regulation in various electronic devices.
3. Motor Control: Utilized in driving motors for applications like automotive and industrial automation.
4. LED Drivers: Helps in efficient power management for LED lighting systems.
5. Battery Management: Used in battery chargers and management systems for energy efficiency.
These application areas benefit from the MOSFET’s low on-resistance and high-speed switching capabilities.
Package
The IPD80R1K0CE is a power MOSFET that comes in a TO-252 package, also known as a DPAK. This surface-mount package is commonly used for high-power and high-frequency applications.
