IPD90N04S3-04

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IPD90N04S3-04

+BOM

OPTLMOS N-CHANNEL POWER MOSFET

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Specifications

Attribute Value
Package / Case Bulk
Series Automotive, AEC-Q101, OptiMOS™
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain(Id) @ 25°C 90A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 3.6mOhm @ 80A, 10V
Vgs(th)(Max) @ Id 4V @ 90µA
Gate Charge(Qg)(Max) @ Vgs 80 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 5200 pF @ 25 V
Power Dissipation (Max) 136W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3-11

Overview

Description

The IPD90N04S3-04 is a 90A, 40V N-channel MOSFET from Infineon’s OptiMOS™ 3 family, designed for high-efficiency power applications. Key features include:
- Low on-resistance (RDS(on)): 3.4 mΩ (max) at 10V VGS, reducing conduction losses.
- High current handling: 90A continuous drain current (ID).
- Fast switching: Optimized for applications like motor drives, DC-DC converters, and power management.
- Robust design: Avalanche-rated and low gate charge (Qg) for improved thermal performance.
Packaged in a TO-252 (DPAK), it suits space-constrained designs. Typical uses include automotive, industrial, and consumer electronics where efficiency and reliability are critical.
For detailed specs, refer to the datasheet.

Equivalent

Equivalent products to the IPD90N04S3-04 (40V, 90A N-channel MOSFET) include:
- IRF3205 (55V, 110A)
- STP80NF55-06 (55V, 80A)
- AOT290L (40V, 100A)
- FDP8870 (40V, 100A)
Check datasheets for exact specs like RDS(on) and gate charge. Alternatives may vary slightly in voltage/current ratings.

Features

The IPD90N04S3-04 is an N-channel MOSFET with the following key features:
- Voltage Rating: 40V
- Current Rating: 90A (continuous)
- Low On-Resistance (RDS(on)): 3.4 mΩ (max at VGS=10V)
- Fast Switching: Optimized for high-efficiency power applications
- Logic-Level Gate Drive: Compatible with 4.5V drive (VGS(th) ~2V)
- Robust Design: Avalanche energy rated, low gate charge (Qg ~60nC)
- Package: TO-252 (DPAK) for efficient thermal dissipation
Ideal for DC-DC converters, motor control, and power management in automotive/industrial systems.

Pinout

The IPD90N04S3-04 is a N-channel MOSFET with the following key specifications:
- Pin Count: 3 pins (Gate, Drain, Source) in a TO-252 (DPAK) package.
- Function: Designed for high-efficiency power switching applications.
- Voltage Rating: 40V
- Current Rating: 90A (continuous)
- Low On-Resistance (RDS(on)): 3.4 mΩ (max at VGS = 10V)
- Fast Switching: Suitable for DC-DC converters, motor control, and power management.
It is commonly used in automotive, industrial, and consumer electronics for high-current switching with minimal losses.

Application

The IPD90N04S3-04 is a 40V N-channel MOSFET commonly used in:
1. Power Management – DC-DC converters, voltage regulators.
2. Motor Control – Brushed/brushless motor drivers.
3. Automotive Systems – Electronic control units (ECUs), lighting.
4. Switching Power Supplies – Efficient power conversion.
5. Battery Protection – Overcurrent/overvoltage protection circuits.
Its low on-resistance (RDS(on)) and high current handling (90A) make it suitable for high-efficiency, high-power applications.

Package

The IPD90N04S3-04 is a N-channel MOSFET housed in a TO-252 (DPAK) surface-mount package. This package is compact, suitable for high-power applications, and features a tab for heat dissipation. It is commonly used in switching power supplies, motor control, and other high-efficiency circuits. The TO-252 package offers good thermal performance and ease of PCB mounting.

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