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IPD90N06S4-04
+BOMMOSFETs N-Ch 60V 90A DPAK-2 OptiMOS-T2
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ManufacturerInfineon Technologies
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Mfr. Part #IPD90N06S4-04
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Datasheet IPD90N06S4-04 DataSheet
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In Stock14790
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Specifications
| Attribute | Value |
| Packaging | MouseReel |
| Standard Pack Qty | 2500 |
Overview
Description
The IPD90N06S4-04 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) produced by Infineon Technologies. It is designed for use in various power management applications, including automotive, industrial, and consumer electronics. This component is notable for its low on-state resistance (R_DS(on)), high-speed switching capabilities, and robustness, making it suitable for high-efficiency power conversion.
Key specifications of the IPD90N06S4-04 include a maximum drain-source voltage (V_DS) of 60V and a continuous drain current (I_D) of up to 90A, allowing it to handle substantial power loads. The MOSFET is built with a trench technology design, enhancing its efficiency and thermal performance. It typically comes in a TO-252 package, which provides efficient heat dissipation and compact size for PCB designs.
The IPD90N06S4-04 is often used in applications such as DC-DC converters, motor drives, and as a switch in power inverters. Its design aims to minimize energy losses, thus optimizing performance in energy-sensitive applications.
Key specifications of the IPD90N06S4-04 include a maximum drain-source voltage (V_DS) of 60V and a continuous drain current (I_D) of up to 90A, allowing it to handle substantial power loads. The MOSFET is built with a trench technology design, enhancing its efficiency and thermal performance. It typically comes in a TO-252 package, which provides efficient heat dissipation and compact size for PCB designs.
The IPD90N06S4-04 is often used in applications such as DC-DC converters, motor drives, and as a switch in power inverters. Its design aims to minimize energy losses, thus optimizing performance in energy-sensitive applications.
Equivalent
The IPD90N06S4-04 is a N-channel MOSFET produced by Infineon. Equivalent products from other manufacturers typically include similar N-channel MOSFETs with comparable voltage, current, and RDS(on) specifications. Examples include:
1. IRFZ44N from Vishay.
2. FQP30N06L from ON Semiconductor.
3. STP60NF06 from STMicroelectronics.
These equivalents are subject to specific application requirements, so it's important to verify their suitability for your particular use case.
1. IRFZ44N from Vishay.
2. FQP30N06L from ON Semiconductor.
3. STP60NF06 from STMicroelectronics.
These equivalents are subject to specific application requirements, so it's important to verify their suitability for your particular use case.
Features
The IPD90N06S4-04 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) commonly used in electronic applications. Here are its key features:
1. N-channel MOSFET: It is an N-channel type, which means it conducts when a positive voltage is applied to the gate relative to the source.
2. Voltage and Current Ratings: Typically supports a maximum drain-source voltage (V_DS) of 60V and a continuous drain current (I_D) of about 90A, making it suitable for high-power applications.
3. Low On-Resistance: Exhibits low R_DS(on), around 4.0 mΩ, which enhances efficiency by reducing power loss during operation.
4. Fast Switching: Designed for fast switching speeds, which is beneficial in high-frequency applications.
5. SMD Package: Available in a surface-mount package, facilitating its use in compact circuit designs.
6. Thermal Performance: Optimized for good thermal performance, often featuring a low thermal resistance.
7. Applications: Commonly used in automotive, industrial, and consumer electronics for power management, motor drives, and DC-DC converters.
This MOSFET is appreciated for its efficiency, reliability, and performance in demanding environments.
1. N-channel MOSFET: It is an N-channel type, which means it conducts when a positive voltage is applied to the gate relative to the source.
2. Voltage and Current Ratings: Typically supports a maximum drain-source voltage (V_DS) of 60V and a continuous drain current (I_D) of about 90A, making it suitable for high-power applications.
3. Low On-Resistance: Exhibits low R_DS(on), around 4.0 mΩ, which enhances efficiency by reducing power loss during operation.
4. Fast Switching: Designed for fast switching speeds, which is beneficial in high-frequency applications.
5. SMD Package: Available in a surface-mount package, facilitating its use in compact circuit designs.
6. Thermal Performance: Optimized for good thermal performance, often featuring a low thermal resistance.
7. Applications: Commonly used in automotive, industrial, and consumer electronics for power management, motor drives, and DC-DC converters.
This MOSFET is appreciated for its efficiency, reliability, and performance in demanding environments.
Pinout
The IPD90N06S4-04 is a MOSFET (metal-oxide-semiconductor field-effect transistor) produced by Infineon Technologies. It typically comes in a TO-252 package, which is a surface-mount technology format. The pin count for this package is generally 3 pins plus a tab, which serves as an additional electrical connection.
The functions of the pins are as follows:
1. Gate: This pin controls the flow of current between the drain and source. Applying a voltage to the gate allows current to flow, effectively turning the MOSFET on.
2. Drain: This pin is the output of the MOSFET where the current flows out when the device is on.
3. Source: This pin is the input and is connected to the ground or the lower potential side of the circuit.
4. Tab: The tab is often connected to the drain and is used for heat dissipation as well as an electrical connection.
This MOSFET is typically used in power management applications due to its ability to handle high current and voltage with low on-state resistance.
The functions of the pins are as follows:
1. Gate: This pin controls the flow of current between the drain and source. Applying a voltage to the gate allows current to flow, effectively turning the MOSFET on.
2. Drain: This pin is the output of the MOSFET where the current flows out when the device is on.
3. Source: This pin is the input and is connected to the ground or the lower potential side of the circuit.
4. Tab: The tab is often connected to the drain and is used for heat dissipation as well as an electrical connection.
This MOSFET is typically used in power management applications due to its ability to handle high current and voltage with low on-state resistance.
Manufacturer
The IPD90N06S4-04 is manufactured by Infineon Technologies AG. Infineon is a German semiconductor manufacturer that specializes in a wide range of electronic components and systems. The company is known for producing products related to automotive, industrial, consumer electronics, and power management industries. Infineon's offerings include microcontrollers, sensors, and power semiconductors, among other products. They are recognized for their focus on innovation and technology development, aiming to provide energy-efficient and reliable solutions across various electronic applications.
Application
The IPD90N06S4-04 is a power MOSFET primarily used in applications that require efficient power management and control. Its main application areas include automotive systems, such as electric power steering, electric pumps, and fan control due to its high efficiency and low on-resistance. It is also used in DC-DC converters, motor drives, and battery management systems. Additionally, it can be found in industrial applications like power supplies, inverters, and switch mode power supplies (SMPS) due to its robust performance in handling high current and voltage. Its design allows for efficient energy utilization, making it suitable for modern power electronics.
Package
The IPD90N06S4-04 is a MOSFET with a package type of TO-252 (DPAK).
