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IPN80R2K4P7
+BOMSMALL SIGNAL FIELD-EFFECT TRANSI
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ManufacturerInfineon Technologies
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Mfr. Part #IPN80R2K4P7
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Datasheet IPN80R2K4P7 DataSheet
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In Stock6716
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Specifications
| Attribute | Value |
| Package | Bulk |
| ProductStatus | Active |
Overview
Description
Key features of the IPN80R2K4P7 include low on-state resistance, which minimizes power loss and heat generation, and high-speed switching capabilities, which improve efficiency in power conversion applications. Additionally, it offers robust avalanche characteristics, enhancing its reliability under high-stress conditions.
This MOSFET is typically used in automotive, industrial, and consumer electronics where efficient power management is crucial. Its design and specifications are optimized for modern electronic applications that require compact, efficient, and reliable components.
Equivalent
Features
1. Voltage Rating: It typically supports a maximum drain-source voltage (V_ds) of around 80V, making it suitable for various medium-voltage applications.
2. Current Capacity: The device can handle high continuous current, often exceeding 100A depending on the specific packaging and operational conditions.
3. Low On-Resistance: The MOSFET is characterized by a very low on-state resistance (R_ds(on)), which reduces conduction losses and improves efficiency.
4. Fast Switching: It features rapid switching capabilities, contributing to reduced switching losses and enhanced performance in high-frequency applications.
5. Thermal Performance: The device is designed for efficient heat dissipation, often featuring a robust package like TO-220, D2PAK, or similar for better thermal management.
6. Application Areas: It's commonly used in applications such as DC/DC converters, synchronous rectification, motor control, and other power management systems.
These features make it a reliable choice for developers looking to optimize power efficiency and performance in their electronic designs.
Pinout
Regarding pin count and function, the IPN80R2K4P7 typically comes in a TO-220 or TO-247 package, commonly used for discrete power devices. These packages generally have three pins:
1. Gate (G): This pin is responsible for controlling the MOSFET. A voltage applied to the gate controls the conductivity between the drain and source.
2. Drain (D): The drain is the terminal where the current enters the MOSFET from the load.
3. Source (S): The source is the terminal where the current exits the MOSFET. It is typically connected to the ground in common-source configurations.
These three pins are standard for N-channel MOSFETs, which the IPN80R2K4P7 is. The device is extensively used in applications like power supplies, inverters, and other high-frequency switching applications.
Manufacturer
Application
1. Switching Power Supplies: Utilized in power supplies for efficient energy conversion.
2. Motor Drives: Employed in motor control circuits for industrial and consumer applications.
3. Inverters: Used in solar inverters and other inverter-based systems for effective DC to AC conversion.
4. LED Drivers: Suitable for driving high-power LEDs with precision.
5. Battery Management Systems: Implemented in systems that require efficient charging and discharging of batteries.
6. Telecommunications: Applied in telecom equipment for reliable power delivery and management.
These applications leverage the MOSFET's fast switching speed, low on-resistance, and high efficiency.