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IPP65R280E6
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ManufacturerInfineon Technologies
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Mfr. Part #IPP65R280E6
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In Stock4637
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Specifications
| Attribute | Value |
| Technology | Si |
| Packaging | Tube |
| Brand | Infineon Technologies |
| Product Type | MOSFETs |
| Series | CoolMOS E6 |
| Factory Pack Quantity | 500 |
| Subcategory | Transistors |
| Part # Aliases | IPP65R28E6XK SP000795268 IPP65R280E6XKSA1 |
| Shipping Restrictions | Mouser does not presently sell this product in your region. |
| Mounting Type | Through Hole |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Height | 15.65 mm |
| Length | 10 mm |
| Width | 4.4 mm |
| Unit Weight | 0.068784 oz |
| Package / Case | TO-220-3 |
| Configuration | Single |
| Tradename | CoolMOS |
| Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel |
| Vds - Drain - Source Breakdown Voltage | 650 V |
| Id - Continuous Drain Current | 13.8 A |
| Rds On | 250 mOhms |
| Vgs - Gate - Source Voltage | - 20 V, + 20 V |
| Pd - Power Dissipation | 104 W |
| Transistor Type | 1 N-Channel |
Overview
Description
The IPP65R280E6 is a high-voltage IGBT (Insulated Gate Bipolar Transistor) designed for efficient power switching applications. It belongs to the E6 series, which is known for its low conduction and switching losses, making it suitable for use in various power conversion systems, including inverters, motor drives, and power supplies.
Key features of the IPP65R280E6 include a maximum collector-emitter voltage of 650V and a continuous collector current rating of 280A. Its low gate drive voltage and high input impedance simplify circuit design and improve efficiency. The device is commonly used in applications requiring high performance and reliability, such as renewable energy systems and industrial automation.
The IPP65R280E6 is housed in a robust package that ensures thermal performance and reliability under demanding conditions. Overall, this IGBT is an excellent choice for engineers seeking high-efficiency solutions in power electronics.
Key features of the IPP65R280E6 include a maximum collector-emitter voltage of 650V and a continuous collector current rating of 280A. Its low gate drive voltage and high input impedance simplify circuit design and improve efficiency. The device is commonly used in applications requiring high performance and reliability, such as renewable energy systems and industrial automation.
The IPP65R280E6 is housed in a robust package that ensures thermal performance and reliability under demanding conditions. Overall, this IGBT is an excellent choice for engineers seeking high-efficiency solutions in power electronics.
Equivalent
The IPP65R280E6 is an N-channel MOSFET from Infineon. Equivalent products include:
1. STP65R280 - by STMicroelectronics
2. FQD65N280 - by Fairchild Semiconductor (now part of ON Semiconductor)
3. IRF280 - by Infineon
4. BSC280N65 - by Infineon
Always verify specifications such as R_ds(on), V_ds, and thermal characteristics for compatibility in your application.
1. STP65R280 - by STMicroelectronics
2. FQD65N280 - by Fairchild Semiconductor (now part of ON Semiconductor)
3. IRF280 - by Infineon
4. BSC280N65 - by Infineon
Always verify specifications such as R_ds(on), V_ds, and thermal characteristics for compatibility in your application.
Features
The IPP65R280E6 is an N-channel MOSFET designed for high-efficiency applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 650V, suitable for high-voltage applications.
2. Current Rating: The continuous drain current (I_D) is up to 280A, enabling it to handle substantial loads.
3. R_DS(on): Low on-resistance (typically 0.28 Ohm at V_GS = 10V) minimizing power losses and improving efficiency.
4. Gate Threshold Voltage: Provides a typical gate threshold voltage (V_GS(th)) of 2-4V, facilitating low-voltage drive.
5. Package Type: Available in a TO-220 package, which offers good thermal performance.
6. Fast Switching: Capable of high-speed switching, making it suitable for applications like high-frequency converters and inverters.
7. Robust Performance: Designed for high reliability with built-in avalanche rating.
These features make the IPP65R280E6 ideal for use in power supplies, motor drives, and renewable energy systems.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 650V, suitable for high-voltage applications.
2. Current Rating: The continuous drain current (I_D) is up to 280A, enabling it to handle substantial loads.
3. R_DS(on): Low on-resistance (typically 0.28 Ohm at V_GS = 10V) minimizing power losses and improving efficiency.
4. Gate Threshold Voltage: Provides a typical gate threshold voltage (V_GS(th)) of 2-4V, facilitating low-voltage drive.
5. Package Type: Available in a TO-220 package, which offers good thermal performance.
6. Fast Switching: Capable of high-speed switching, making it suitable for applications like high-frequency converters and inverters.
7. Robust Performance: Designed for high reliability with built-in avalanche rating.
These features make the IPP65R280E6 ideal for use in power supplies, motor drives, and renewable energy systems.
Pinout
The IPP65R280E6 is a N-channel MOSFET with a total of 4 pins. The pin configuration and their functions are as follows:
1. Gate (G) - This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow from the drain to the source.
2. Drain (D) - This is the terminal where current flows out of the MOSFET. It is connected to the load.
3. Source (S) - This pin is the terminal where current enters the MOSFET. It is typically connected to ground in a low-side switch configuration.
4. Body Diode (intrinsic) - While not a separate pin, it should be noted that the MOSFET includes an intrinsic body diode between the drain and source, which can conduct in the reverse direction.
The IPP65R280E6 is designed for high-efficiency applications and features low on-resistance and high-speed switching capabilities.
1. Gate (G) - This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow from the drain to the source.
2. Drain (D) - This is the terminal where current flows out of the MOSFET. It is connected to the load.
3. Source (S) - This pin is the terminal where current enters the MOSFET. It is typically connected to ground in a low-side switch configuration.
4. Body Diode (intrinsic) - While not a separate pin, it should be noted that the MOSFET includes an intrinsic body diode between the drain and source, which can conduct in the reverse direction.
The IPP65R280E6 is designed for high-efficiency applications and features low on-resistance and high-speed switching capabilities.
Manufacturer
The IPP65R280E6 is manufactured by Infineon Technologies AG, a German semiconductor manufacturer. Infineon specializes in producing a wide range of semiconductor solutions, including power semiconductors, microcontrollers, and sensors. The company serves various industries, such as automotive, industrial, and consumer electronics, focusing on providing innovative technologies for energy efficiency and connectivity. Infineon is particularly known for its products in power management and automation, enabling advancements in areas like electric vehicles, renewable energy, and industrial automation.
Application
The IPP65R280E6 is an N-channel MOSFET designed for high-efficiency applications. Its key application areas include:
1. Power Supply Units (PSUs): Used in switch-mode power supplies for efficient power conversion.
2. Motor Drives: Employed in motor control systems for electric vehicles and industrial automation.
3. DC-DC Converters: Utilized in various DC-DC conversion applications, enhancing efficiency.
4. Solar Inverters: Applied in renewable energy systems for solar power conversion.
5. LED Drivers: Used in lighting applications for efficient control of LED circuits.
Overall, it serves in applications requiring high power efficiency and thermal performance.
1. Power Supply Units (PSUs): Used in switch-mode power supplies for efficient power conversion.
2. Motor Drives: Employed in motor control systems for electric vehicles and industrial automation.
3. DC-DC Converters: Utilized in various DC-DC conversion applications, enhancing efficiency.
4. Solar Inverters: Applied in renewable energy systems for solar power conversion.
5. LED Drivers: Used in lighting applications for efficient control of LED circuits.
Overall, it serves in applications requiring high power efficiency and thermal performance.
Package
The IPP65R280E6 is packaged in a TO-247 format, which is a type of through-hole package commonly used for high-power applications. This package design allows for efficient heat dissipation, making it suitable for power MOSFETs like the IPP65R280E6.
