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IPW60R024P7
+BOMMOSFETs HIGH POWER_NEW
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ManufacturerInfineon Technologies
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Mfr. Part #IPW60R024P7
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Datasheet IPW60R024P7 DataSheet
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In Stock3703
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Specifications
| Attribute | Value |
| Packaging | Tube |
Overview
Description
The IPW60R024P7 operates at a maximum drain-source voltage (V_DS) of 600V, making it suitable for use in medium to high-voltage applications such as power supplies, inverters, and motor drives. Its fast switching capability and robust avalanche performance enhance its efficiency and reliability in demanding environments.
Overall, the IPW60R024P7 is a cost-effective solution for designers seeking to optimize energy efficiency and system performance in a compact package. Its advanced design supports modern power electronic applications, aligning with the industry's push towards greener and more sustainable technologies.
Equivalent
1. STMicroelectronics: STP65N60DM2, part of their MDmesh DM2 series.
2. ON Semiconductor: FCP60N65S3, from their SuperFET3 series.
3. Vishay: SiHP24N60EF, from their E series MOSFETs.
Ensure to verify the specific parameters and application needs as equivalents may differ slightly in performance or specifications.
Features
1. Voltage and Current Ratings: It typically supports a maximum drain-source voltage (V_ds) of 600V and a continuous drain current (I_d) around 70A, making it suitable for high-power applications.
2. R_ds(on): It offers a low on-state resistance, approximately 24mΩ, which helps reduce conduction losses and improve efficiency.
3. Technology: Based on Infineon’s CoolMOS™ P7 technology, it provides better efficiency and thermal performance compared to previous generations.
4. Switching Performance: Designed for fast switching, it reduces switching losses, enhancing overall system efficiency.
5. Thermal Characteristics: The MOSFET has excellent thermal performance, allowing for operation in high-temperature environments.
6. Package: Often available in a TO-247 package, offering robust thermal and electrical characteristics.
7. Applications: Suitable for applications like power supplies, inverters, and other high-frequency switching applications.
These features make the IPW60R024P7 a reliable choice for efficient power management in various electronic devices.
Pinout
The pin functions are as follows:
1. Gate (G): This pin is used to control the MOSFET's switching. A voltage applied to the gate controls the flow of current between the drain and source.
2. Drain (D): This pin is the output end of the MOSFET, through which current flows from the drain to the source when the MOSFET is in the "on" state.
3. Source (S): This pin acts as the reference point for the current flowing through the MOSFET.
This MOSFET is notable for its low on-state resistance, making it suitable for applications that require high efficiency and low power loss.
Manufacturer
Application
1. Switch Mode Power Supplies (SMPS): Used in both consumer electronics and industrial power supplies for efficient energy conversion.
2. Motor Drives: Provides efficient control in electric motors for industrial and automotive applications.
3. Renewable Energy Systems: Employed in solar inverters for converting DC to AC.
4. Telecommunications: Used in power management circuits for telecom equipment.
5. LED Lighting: Facilitates efficient power regulation in LED drivers.
Its low on-state resistance and fast switching capabilities make it suitable for high-efficiency power conversion applications.