IPW60R099CP

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IPW60R099CP

+BOM

MOSFET N-CH 600V 31A TO247-3-1

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Specifications

Attribute Value
Supplier Rochester Electronics, LLC
Package / Case Bulk
Series CoolMOS™
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain(Id) @ 25°C 31A (Tc)
Rds On(Max) @ Id Vgs 99mOhm @ 18A, 10V
Vgs(th)(Max) @ Id 3.5V @ 1.2mA
Gate Charge(Qg)(Max) @ Vgs 80 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 2800 pF @ 100 V
Power Dissipation (Max) 255W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO247-3

Overview

Description

The IPW60R099CP is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed by Infineon Technologies, part of their CoolMOS™ CP series. This component is primarily used in high-efficiency power conversion applications. It is designed to handle high voltages up to 600V and provides a low on-resistance of 99 milliohms, which contributes to reduced power loss and improved efficiency in switching operations.
The IPW60R099CP is notable for its fast switching speeds and high performance, making it suitable for use in applications such as power supplies, adapters, and other power conversion devices. Its advanced design also helps in minimizing electromagnetic interference and heat generation, which enhances its reliability and lifespan in demanding environments. The MOSFET comes in a TO-247 package, facilitating easy integration into various electronic circuits. Overall, the IPW60R099CP is a robust choice for engineers looking for efficiency and reliability in high-voltage power management applications.

Equivalent

The Infineon IPW60R099CP is a CoolMOS power MOSFET, known for high voltage and low power loss. Equivalent products from other manufacturers could include:
1. STMicroelectronics STW60NM60N: Similar voltage rating and performance.
2. ON Semiconductor FDPF16N60NT: Another high-voltage MOSFET with comparable specifications.
3. NXP PSMN070-60YLC: Offers similar performance in terms of voltage and efficiency.
Always verify specific electrical characteristics and thermal parameters to ensure compatibility.

Features

The IPW60R099CP is a power MOSFET featuring several key characteristics:
1. Voltage and Current Ratings: It operates with a high voltage capability, typically rated at 600V, which makes it suitable for high-voltage applications.
2. RDS(on): It has a low on-resistance, around 99 milliohms, which enhances efficiency by reducing power losses during operation.
3. Technology: This MOSFET employs CoolMOS™ technology, known for providing superior performance in terms of efficiency and thermal management.
4. Thermal Performance: It offers excellent thermal performance, which allows for compact designs and improved reliability in high-temperature environments.
5. Switching Speed: The MOSFET is optimized for fast switching, which is beneficial for applications that require quick response times.
6. Applications: It is commonly used in power supply units, lighting, motor control, and other industrial applications that demand high efficiency and reliability.
These features make the IPW60R099CP ideal for applications seeking to maximize efficiency and durability while operating at high voltages.

Pinout

The IPW60R099CP is a power MOSFET from Infineon Technologies, commonly used in high-efficiency power conversion applications. It typically comes in a TO-247 package, which features three pins.
The pin configuration for the IPW60R099CP is as follows:
1. Gate (G): This pin is used to control the MOSFET's switching state by applying a voltage that allows current to flow between the drain and source.
2. Drain (D): This pin is connected to the load, and the main current flows through this terminal when the MOSFET is turned on.
3. Source (S): This pin serves as the return path for the current flowing through the drain.
The IPW60R099CP is designed for applications requiring efficient power management, such as in power supplies and converters, due to its low on-state resistance and high-speed switching capability.

Manufacturer

The IPW60R099CP is manufactured by Infineon Technologies. Infineon is a German semiconductor company that specializes in the design and production of a wide range of semiconductor solutions. These include power semiconductors, microcontrollers, sensors, and security ICs. Infineon's products are used in various applications across different industries, including automotive, industrial, consumer electronics, and security. The company is known for its innovation in power management and efficiency, contributing to advancements in areas such as electric vehicles, renewable energy, and smart devices.

Application

The IPW60R099CP is a power MOSFET commonly used in various applications due to its efficiency and reliability. Key application areas include:
1. Power Supplies: Used in switched-mode power supplies (SMPS) for increased efficiency and thermal performance.
2. Motor Drives: Employed in AC and DC motor control systems for industrial and automotive applications.
3. Inverters: Suitable for solar inverters and uninterruptible power supplies (UPS) due to its high-speed switching capabilities.
4. Lighting Systems: Utilized in LED and other lighting solutions to enhance energy efficiency.
5. Telecommunications: Used in equipment that requires high reliability and performance in power conversion.
These applications benefit from the IPW60R099CP's low on-resistance and fast switching characteristics.

Package

The IPW60R099CP is a power MOSFET from Infineon's CoolMOS series. It is packaged in a TO-247, which is a type of three-lead package commonly used for high-power components. This package is designed to handle significant power levels while providing efficient thermal performance.

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