IR2110

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IR2110

+BOM

IC GATE DRVR HALF-BRIDGE 14DIP

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Specifications

Attribute Value
Package Tube
ProductStatus Obsolete
DrivenConfiguration Half-Bridge
ChannelType Independent
NumberofDrivers 2
GateType IGBT, N-Channel MOSFET
Voltage-Supply 3.3V ~ 20V
LogicVoltage-VILVIH 6V, 9.5V
Current-PeakOutput(SourceSink) 2A, 2A
InputType Non-Inverting
HighSideVoltage-Max(Bootstrap) 500 V
Rise/FallTime(Typ) 25ns, 17ns
OperatingTemperature -40°C ~ 150°C (TJ)
MountingType Through Hole
Package/Case 14-DIP (0.300, 7.62mm)

Overview

Description

The IR2110 is a high-voltage, high-speed power MOSFET and IGBT driver that is used to drive N-channel MOSFETs or IGBTs in a half-bridge configuration. Manufactured by Infineon Technologies, it is widely utilized in applications such as motor drives, inverters, and switch-mode power supplies. The IR2110 features a floating channel that can be used to drive the high-side switch up to 500V, and it can withstand transient voltages up to 600V. It offers a gate drive supply range from 10V to 20V and provides separate logic and power grounds, which enhances its noise immunity.
The driver includes a low-side and high-side PWM signal input, allowing for precise control over the switching process. Its dead time circuitry ensures that both the high-side and low-side switches are not on simultaneously, preventing shoot-through. The IR2110 also has built-in protections such as under-voltage lockout for both low-side and high-side outputs. Its robust design makes it suitable for a range of industrial and consumer applications that require efficient power conversion and management.

Equivalent

The IR2110 is a high voltage gate driver IC commonly used for driving MOSFETs and IGBTs. Equivalent products include:
1. FAN7392 by ON Semiconductor
2. L6384 by STMicroelectronics
3. TLP250 by Toshiba
4. IXDD404 by IXYS
5. HCPL-3120 by Broadcom
These alternatives offer similar functions with variations in parameters like voltage rating and switching speed. It’s crucial to compare datasheets to ensure compatibility with your specific application requirements.

Features

The IR2110 is a high-voltage, high-speed power MOSFET and IGBT driver with specific features that make it ideal for driving half-bridge and full-bridge circuits. Key features include:
1. High Voltage Tolerance: It can handle up to 500V, suitable for high-voltage applications.
2. High-Speed Operation: Fast switching speeds with typical rise and fall times around 120ns.
3. Bootstrapped High-Side Driver: Allows for controlling high-side MOSFETs in a half-bridge configuration without the need for isolated power supplies.
4. Floating Channel: Capable of operating with bootstrap components up to 500V.
5. Under-Voltage Lockout (UVLO): Protects against operating at low voltages, ensuring MOSFETs and IGBTs do not operate in a potentially damaging region.
6. CMOS and LSTTL Compatible Inputs: Simplifies interfacing with microcontrollers and other digital devices.
7. Dead-Time Control: Provides built-in dead-time to prevent shoot-through currents in half-bridge configurations.
8. Supply Voltage Range: Operates within a wide supply voltage range of 10V to 20V.
These features make the IR2110 robust, versatile, and efficient for various high-power and high-frequency driving applications.

Pinout

The IR2110 is a high-voltage, high-speed power MOSFET and IGBT driver with independent high and low side referenced output channels. It has a 14-pin configuration. Here's a brief overview of its pin functions:
1. VCC: Logic supply voltage.
2. VB: High-side floating supply voltage.
3. VS: High-side floating supply return.
4. HO: High-side gate drive output.
5. VDD: Low-side and logic fixed supply voltage.
6. HIN: High-side input logic.
7. LIN: Low-side input logic.
8. COM: Logic ground.
9. LO: Low-side gate drive output.
10. NC: No connection.
11. VSS: Low-side supply return.
12. VDD: Low-side logic fixed supply voltage (usually linked with pin 5).
13. NC: No connection.
14. NC: No connection.
The IR2110 is designed to drive power transistors in various applications and features under-voltage lockout protection. The independent high and low side drivers make it versatile for different power stage configurations.

Manufacturer

The IR2110 is manufactured by Infineon Technologies. Infineon is a German semiconductor company that specializes in designing and manufacturing a wide range of semiconductor solutions, including power semiconductors, microcontrollers, security controllers, and sensors. Headquartered in Neubiberg, Germany, Infineon is known for its expertise in power electronics and is a major player in the automotive, industrial, and consumer electronics sectors. The company focuses on developing energy-efficient and advanced technology solutions that cater to the growing demand for sustainable and smart applications. Infineon acquired the IR2110 product line through its acquisition of International Rectifier in 2015, a company known for its pioneering work in power management and semiconductor technology.

Application

The IR2110 is a high-voltage, high-speed MOSFET and IGBT driver used in various applications. Key areas include:
1. Switching Power Supplies: It drives MOSFETs in power supply circuits for efficient energy conversion.
2. Motor Control: Used in DC motor drivers and inverter circuits for controlling motor speed and direction.
3. Uninterruptible Power Supplies (UPS): Helps in managing power flow and battery charging.
4. Renewable Energy Systems: Integral in solar inverters and other renewable energy converters.
5. Industrial Automation: Used in robotics and automated systems for precise control of power electronics.
Its ability to drive high-side and low-side transistors makes it versatile for these applications.

Package

The IR2110 is typically available in Dual Inline Package (DIP) and Small Outline Integrated Circuit (SOIC) package types. These packages facilitate easy integration onto printed circuit boards, with SOIC offering a more compact design compared to the larger DIP format.