IR2111STRPBF

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IR2111STRPBF

+BOM

IC GATE DRVR HALF-BRIDGE 8SOIC

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Specifications

Attribute Value
Package Tape & Reel (TR),Cut Tape (CT)
ProductStatus Active
DrivenConfiguration Half-Bridge
ChannelType Synchronous
NumberofDrivers 2
GateType IGBT, N-Channel MOSFET
Voltage-Supply 10V ~ 20V
LogicVoltage-VILVIH 8.3V, 12.6V
Current-PeakOutput(SourceSink) 250mA, 500mA
InputType Non-Inverting
HighSideVoltage-Max(Bootstrap) 600 V
Rise/FallTime(Typ) 80ns, 40ns
OperatingTemperature -40°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case 8-SOIC (0.154, 3.90mm Width)

Overview

Description

The IR2111STRPBF is a high-voltage, high-speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Commonly used in motor control, power supply, and lighting applications, it facilitates the efficient switching of high-power devices. The IR2111STRPBF features a floating channel designed for bootstrap operation, which allows for the driving of high-side and low-side devices up to 600V. It includes key features such as matched propagation delay for both channels, under-voltage lockout protection for both high and low side drivers, and a wide supply voltage range. The device is packaged in a lead-free, RoHS-compliant SOIC-8 package, making it suitable for surface-mount applications. Its design aids in reducing electromagnetic interference and improving overall efficiency in power electronic circuits.

Equivalent

The IR2111STRPBF is a high- and low-side driver IC. Equivalent products include:
1. IR2110/IR2110S - Similar gate driver ICs with comparable characteristics.
2. IRS2111 - Another gate driver from Infineon with similar functionality.
3. L6384 - A high- and low-side driver from STMicroelectronics.
4. FAN7382 - A gate driver from ON Semiconductor with similar features.
Ensure compatibility by checking the datasheets for exact specifications and pin configurations.

Features

The IR2111STRPBF is a high-voltage, high-speed power MOSFET and IGBT driver with features designed to enhance performance in various applications. Key features include:
1. High Voltage Capability: It can handle up to 600V, making it suitable for driving high-power devices.
2. High-Speed Operation: The driver features fast switching speeds, which improve efficiency and performance in rapid switching applications.
3. Bootstrap Circuitry: It has built-in high-side and low-side referenced output channels with a floating channel designed for bootstrap operation, enhancing ease of use in half-bridge configurations.
4. Under-Voltage Lockout (UVLO): Ensures that the device operates only when there is sufficient supply voltage, protecting it from low voltage conditions that could cause malfunction.
5. Shoot-Through Protection: Helps prevent simultaneous conduction of high-side and low-side MOSFETs or IGBTs, protecting the circuit from damage.
6. Output Source/Sink Current Capability: Offers adequate drive strength for various gate loads, enabling strong and effective switching.
7. Compatibility: Designed to be compatible with TTL and CMOS logic levels.
These features make the IR2111STRPBF well-suited for use in motor drives, inverters, and other power electronic applications.

Pinout

The IR2111STRPBF is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. It typically comes in an 8-pin package, specifically the SOIC-8.
Here is a brief summary of the pin functions:
1. VCC: Supply voltage for the logic circuitry.
2. IN: Logic input for controlling the gate.
3. COM: Common ground for the low-side driver.
4. LO: Low-side gate drive output.
5. VS: High voltage floating supply return.
6. HO: High-side gate drive output.
7. VB: High-side floating supply voltage.
8. NC (No Connect): Sometimes used as a no-connect or not internally connected for certain packaging.
The IR2111STRPBF is designed for use in half-bridge and full-bridge configurations, providing reliable and efficient driving capability for high-power applications. Its primary function is to drive the gates of power MOSFETs and IGBTs, facilitating the switching operation in various circuits.

Manufacturer

The IR2111STRPBF is manufactured by Infineon Technologies. Infineon is a German semiconductor company that is known for designing, developing, and manufacturing a wide range of semiconductor solutions. These solutions serve various applications, including automotive, industrial power control, power management, and digital security. The IR2111STRPBF itself is a high-voltage, high-speed power MOSFET and IGBT driver, which indicates Infineon's expertise in producing components for power electronics. As one of the leading semiconductor companies globally, Infineon focuses on innovation in energy efficiency, mobility, and security, providing products that are essential for modern electronic systems.

Application

The IR2111STRPBF is a high-voltage, high-speed power MOSFET and IGBT driver with independent high- and low-side referenced output channels. Its key application areas include:
1. Motor Control: Efficiently drives motors in various applications such as industrial machinery and consumer electronics.
2. Power Supplies: Used in switch-mode power supplies (SMPS) for improving performance and efficiency.
3. Consumer Electronics: Utilized in devices requiring efficient power management, such as air conditioners and washing machines.
4. Renewable Energy Systems: Plays a role in solar inverters and other renewable energy conversion systems.
5. Automotive Systems: Used in electric and hybrid vehicle systems for managing high-power components.
These applications benefit from the driver's robust isolation capabilities and ability to handle high voltage levels.

Package

The IR2111STRPBF is housed in an SOIC-8 (Small Outline Integrated Circuit) package, which is suitable for surface mounting on PCBs.

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