IR2118STRPBF

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IR2118STRPBF

+BOM

IC GATE DRVR HIGH-SIDE 8SOIC

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Specifications

Attribute Value
Package Tape & Reel (TR),Cut Tape (CT)
ProductStatus Active
DrivenConfiguration High-Side
ChannelType Single
NumberofDrivers 1
GateType IGBT, N-Channel MOSFET
Voltage-Supply 10V ~ 20V
LogicVoltage-VILVIH 6V, 9.5V
Current-PeakOutput(SourceSink) 250mA, 500mA
InputType Inverting
HighSideVoltage-Max(Bootstrap) 600 V
Rise/FallTime(Typ) 80ns, 40ns
OperatingTemperature -40°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case 8-SOIC (0.154, 3.90mm Width)

Overview

Description

The IR2118STRPBF is a high-voltage gate driver integrated circuit (IC) designed to drive both high-side and low-side MOSFETs or IGBTs. It is commonly used in applications like motor drives, power supplies, and inverters. Manufactured by Infineon Technologies, this IC is part of the IR2118 family and comes with several key features:
1. High Voltage Capability: It can operate at voltages up to 600V, making it suitable for high-power applications.

2. Bootstrap Circuitry: The IC includes integrated bootstrap diodes, which simplifies the design and reduces the component count in the circuit.
3. Protection Features: It offers protection mechanisms such as under-voltage lockout (UVLO) for high-side and low-side outputs to enhance safety and reliability.
4. Fast Switching: The IR2118STRPBF provides high-speed operation with fast propagation delays, which is essential for efficient power conversion.
5. Compact Package: Usually available in a surface-mount package, it is designed for compact and efficient PCB layouts.
These characteristics make the IR2118STRPBF a versatile and reliable choice for driving power transistors in demanding electrical environments.

Equivalent

The IR2118STRPBF is a high voltage, high-speed power MOSFET and IGBT driver. Equivalent products include:
1. IR2110(S) - Dual high- and low-side driver.
2. MIC4451/4452 - High-speed MOSFET drivers.
3. FAN7392 - High- and low-side gate driver.
4. UCC27714 - 600V high- and low-side driver.
5. L6384E - High-voltage high- and low-side driver.
Ensure compatibility based on specific application requirements like voltage, current ratings, and switching speed.

Features

The IR2118STRPBF is a high-voltage, high-speed power MOSFET and IGBT gate driver. Key features include:
1. Voltage Rating: Capable of driving gate voltages up to 600V.
2. Output Channels: It provides independent high and low side referenced output channels, offering versatility in various configurations.
3. Gate Drive: Features a gate drive supply range from 10V to 20V, suitable for most applications.
4. Protection: Includes over-current protection and under-voltage lockout for safety and reliability.
5. Drive Capability: It has a typical source/sink current of 2A, which ensures efficient driving of power MOSFETs and IGBTs.
6. Propagation Delay: Offers a matched propagation delay for both high and low side drivers, maintaining performance consistency.
7. Floating Channel: The high-side driver can operate with a floating channel up to 600V, enhancing its adaptability.
8. Package: Available in a compact SOIC-8 package, making it suitable for space-constrained designs.
9. Temperature Range: It operates over a wide temperature range, ensuring reliability under various environmental conditions.
These features make the IR2118STRPBF suitable for applications in motor drive circuits, power inverters, and other high-voltage power systems.

Pinout

The IR2118STRPBF is a high-voltage, high-speed power MOSFET and IGBT driver with 600V half-bridge capabilities. It is designed by Infineon Technologies, previously International Rectifier. The device has an 8-pin configuration that provides features aimed at efficient driving of power transistors.
Here is a brief overview of the pin functions:
1. VCC - Logic and internal gate driver supply voltage.
2. VB - High-side floating supply voltage.
3. VS - High-side floating supply return.
4. HO - High-side gate drive output.
5. LO - Low-side gate drive output.
6. COM - Low-side return.
7. LIN - Low-side input.
8. HIN - High-side input.
The IR2118 is commonly used in applications such as motor drives, switch-mode power supplies, and uninterruptible power supplies, where efficient, reliable, and isolated gate driving is required.

Manufacturer

The IR2118STRPBF is manufactured by Infineon Technologies. Infineon is a German semiconductor company that specializes in developing and manufacturing a wide range of semiconductor solutions. These solutions are used in various applications, including automotive, industrial power control, power management, and digital security. The company is known for its innovation and expertise in power electronics, microcontrollers, sensors, and security technologies. Infineon's products are integral to numerous electronic devices and systems, contributing to energy efficiency, mobility, and security across different sectors.

Application

The IR2118STRPBF is a high-voltage, high-speed power MOSFET and IGBT driver. Its application areas include:
1. Switch-mode power supplies (SMPS): Used for efficient power conversion.
2. Motor drives: Suitable for driving motors in various industrial and consumer applications.
3. Uninterruptible power supplies (UPS): Used in backup power systems for reliability.
4. Lighting ballasts: Ensures efficient and stable operation of lighting systems.
5. Renewable energy systems: Used in solar inverters and wind turbines for energy conversion.
These applications benefit from the IR2118STRPBF's ability to drive high-speed power devices with a floating channel designed for bootstrap operation.

Package

The IR2118STRPBF is an integrated circuit with an SOIC-8 (Small Outline Integrated Circuit) package type.

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