IR2130PBF

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IR2130PBF

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IR2130S - GATE DRIVER

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Specifications

Attribute Value
PartStatus Obsolete
DigiKeyProgrammable Not Verified
DrivenConfiguration Half-Bridge
ChannelType 3-Phase
NumberofDrivers 6
GateType IGBT, MOSFET (N-Channel)
Voltage-Supply 10V ~ 20V
LogicVoltage-VIL,VIH 0.8V, 2.2V
Current-PeakOutput(Source,Sink) 200mA, 420mA
InputType Non-Inverting
HighSideVoltage-Max(Bootstrap) 600 V
Rise/FallTime(Typ) 80ns, 35ns
OperatingTemperature -40°C ~ 125°C (TA)
MountingType Through Hole
Package/Case 28-DIP (0.600", 15.24mm)
SupplierDevicePackage 28-DIP
BaseProductNumber IR2130

Overview

Description

IR2130PBF is a high-voltage, high-speed gate driver designed for driving N-channel MOSFETs and IGBTs in various applications, including motor control, power inverters, and DC-DC converters. It features a dual output, capable of independently driving the high-side and low-side switches, ensuring efficient operation in half-bridge and full-bridge configurations.
Key features include a wide operating voltage range, fast rise and fall times, and protection mechanisms such as under-voltage lockout (UVLO) and cross-conduction prevention. The IC is designed to operate with minimal delays, enhancing switching efficiency and reducing power losses.
The IR2130PBF is particularly well-suited for applications requiring robust performance and reliability in harsh environments. Its compact design and integration of critical functionalities make it a popular choice among engineers looking to optimize power management solutions in industrial and automotive sectors.

Equivalent

Equivalent products to the IR2130PBF chip include the IR2135, IR2133, and IR2136. These devices are part of the same family of high-voltage gate drivers, offering similar functionalities for driving IGBTs and MOSFETs in half-bridge and full-bridge configurations. Always check the specific datasheets for detailed specifications and compatibility.

Features

The IR2130PBF is an integrated high-side and low-side driver designed for driving power MOSFETs and IGBTs in half-bridge configurations. Key features include:
1. High Voltage Capability: It operates up to 600V, making it suitable for a variety of high-voltage applications.
2. Bootstrap Operation: The driver includes a bootstrap circuit to facilitate high-side driving without an additional supply voltage.
3. Dead-Time Control: Integrated circuitry allows for adjustable dead-time to prevent shoot-through, enhancing reliability.
4. High and Low-Side Driver: It supports both high-side and low-side drivers, simplifying circuit design.
5. Rail-to-Rail Output: The output stages can drive the gate of MOSFETs and IGBTs to the full supply voltage.
6. Under-Voltage Lockout (UVLO): Protects the device by disabling the output when supply voltage drops below a certain threshold.
7. Thermal Protection: Ensures reliability under high-temperature conditions.
These features make the IR2130PBF suitable for a variety of applications, including motor drives, power supplies, and inverters.

Pinout

The IR2130PBF is a high-voltage gate driver IC designed for driving three-phase brushless DC motors and similar applications. It comes in a 20-pin package.
Pin Count and Function:
- Pin Count: 20 pins
- Key Functions:
- VCC: Supply voltage for the IC.
- COM: Common ground connection.
- VS1, VS2, VS3: High-side floating supply voltages for the switches (S1, S2, S3).
- VB1, VB2, VB3: High-side gate driver outputs.
- HO1, HO2, HO3: High-side output drivers for switching devices.
- LO1, LO2, LO3: Low-side output drivers for switching devices.
- SD: Shutdown input.
- CSN, CSP: Current sense inputs for overcurrent protection.
- FAULT: Fault indicator output.
- REGN: Regulator output for internal use.
This IC is designed to drive IGBTs or MOSFETs in a half-bridge configuration, providing robust performance in motor drive applications.

Manufacturer

The IR2130PBF is manufactured by Infineon Technologies AG, a leading global semiconductor manufacturer. Infineon is known for producing a wide range of electronic components, including power semiconductors, microcontrollers, and sensors. The company focuses on automotive, industrial, and security applications, providing solutions that enhance energy efficiency and safety in various electronic systems. Founded in 1999 and headquartered in Neubiberg, Germany, Infineon operates in multiple markets and is recognized for its commitment to innovation and sustainability in semiconductors. The IR2130PBF is a high-voltage, high-speed power MOSFET and IGBT driver, typically used in motor control and power conversion applications.

Application

The IR2130PBF is a high-voltage, high-speed gate driver designed for driving power MOSFETs and IGBTs in various applications. Its primary application areas include:
1. Motor Drives: Used in industrial motor control systems, electric vehicles, and robotics.
2. Switching Power Supplies: Employed in DC-DC converters and inverters for energy efficiency.
3. Renewable Energy Systems: Utilized in solar inverters and wind turbine power conversion.
4. Uninterruptible Power Supplies (UPS): For reliable power backup solutions.
5. Audio Amplifiers: In Class D audio systems for efficient power management.
These applications leverage the IR2130PBF's ability to drive high-speed switching and handle high voltages.

Package

The IR2130PBF is typically available in a 28-pin SOIC (Small Outline Integrated Circuit) package. This package type is designed for surface mounting and is commonly used in power management applications.

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