Images are for reference only
IRF135B203
+BOMMOSFET N-CH 135V 129A TO220-3
-
ManufacturerInfineon Technologies
-
Mfr. Part #IRF135B203
-
Datasheet IRF135B203 DataSheet
-
In Stock6630
365 Days Quality Guarantee
7*24 hours service quarantee
90-day after-sales guarantee
Genuine Product Guarantee
Specifications
| Attribute | Value |
| Series | StrongIRFET™ |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 135 V |
| Current - Continuous Drain (Id) @ 25°C | 129A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 8.4mOhm @ 77A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 270 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 9700 pF @ 50 V |
| Power Dissipation (Max) | 441W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO220-3 |
| Package / Case | TO-220-3 |
| Base Product Number | IRF135 |
Overview
Description
The IRF135B203 is a N-channel MOSFET designed for high-speed switching applications. It is commonly used in power management due to its low on-resistance and high current capacity. The device features a maximum drain-source voltage (Vds) of 60V and a continuous drain current (Id) of up to 30A, making it suitable for high-efficiency converters, motor control, and other power applications.
Key specifications include a low Rds(on) (drain-source on resistance), which enhances efficiency by reducing power losses. The IRF135B203 also has a fast switching speed, enabling it to handle rapid changes in voltage and current, which is crucial for applications like pulse-width modulation (PWM) in power supplies.
With a TO-220 package, it offers good thermal performance and ease of heat dissipation. Overall, the IRF135B203 is a reliable choice for designers seeking effective power switching solutions in various electronic circuits.
Key specifications include a low Rds(on) (drain-source on resistance), which enhances efficiency by reducing power losses. The IRF135B203 also has a fast switching speed, enabling it to handle rapid changes in voltage and current, which is crucial for applications like pulse-width modulation (PWM) in power supplies.
With a TO-220 package, it offers good thermal performance and ease of heat dissipation. Overall, the IRF135B203 is a reliable choice for designers seeking effective power switching solutions in various electronic circuits.
Equivalent
The IRF135B203 is a MOSFET, and equivalent products include the IRF135, IRF140, and IRF150. Other options may include the STP16NF06, FQP30N06L, and BS170, depending on voltage and current requirements. Always check specific datasheets for exact specifications such as Rds(on), Vds, and Id to ensure compatibility in your application.
Features
The IRF135B203 is an N-channel MOSFET designed for high-speed switching applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 55V, making it suitable for medium voltage applications.
2. Current Rating: The continuous drain current (I_D) is rated at 15A, providing robust performance in various applications.
3. R_DS(on): It offers a low on-resistance (R_DS(on)) typically around 0.045 ohms, ensuring efficient operation and minimal power loss during conduction.
4. Gate Threshold Voltage (V_GS(th)): The gate threshold voltage ranges from 2V to 4V, allowing for easy drive with low-voltage logic levels.
5. Package Type: Available in TO-220 and DPAK packages, facilitating ease of installation and heat dissipation.
6. Fast Switching Speed: Designed for quick switching, it is ideal for applications such as power management, DC-DC converters, and motor control.
Overall, the IRF135B203 is a versatile MOSFET suitable for various electronic applications requiring reliable performance.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 55V, making it suitable for medium voltage applications.
2. Current Rating: The continuous drain current (I_D) is rated at 15A, providing robust performance in various applications.
3. R_DS(on): It offers a low on-resistance (R_DS(on)) typically around 0.045 ohms, ensuring efficient operation and minimal power loss during conduction.
4. Gate Threshold Voltage (V_GS(th)): The gate threshold voltage ranges from 2V to 4V, allowing for easy drive with low-voltage logic levels.
5. Package Type: Available in TO-220 and DPAK packages, facilitating ease of installation and heat dissipation.
6. Fast Switching Speed: Designed for quick switching, it is ideal for applications such as power management, DC-DC converters, and motor control.
Overall, the IRF135B203 is a versatile MOSFET suitable for various electronic applications requiring reliable performance.
Pinout
The IRF135B203 is a high-voltage N-channel MOSFET with a total of 6 pins. The pin configuration and their functions are as follows:
1. Gate (G): Controls the MOSFET's operational state (on/off).
2. Drain (D): The terminal through which the main current flows when the MOSFET is on.
3. Source (S): The terminal connected to the ground or return path in a circuit.
The IRF135B203 is designed for applications in switching and amplification, featuring a high voltage rating and low on-resistance. It is commonly used in power management, motor control, and other high-frequency applications. Always refer to the specific datasheet for detailed electrical characteristics and ratings.
1. Gate (G): Controls the MOSFET's operational state (on/off).
2. Drain (D): The terminal through which the main current flows when the MOSFET is on.
3. Source (S): The terminal connected to the ground or return path in a circuit.
The IRF135B203 is designed for applications in switching and amplification, featuring a high voltage rating and low on-resistance. It is commonly used in power management, motor control, and other high-frequency applications. Always refer to the specific datasheet for detailed electrical characteristics and ratings.
Manufacturer
The IRF135B203 is manufactured by Infineon Technologies AG, a global semiconductor company headquartered in Neubiberg, Germany. Infineon focuses on providing advanced semiconductor solutions for various applications, including automotive, industrial, and consumer electronics. The company is known for its expertise in power semiconductors, microcontrollers, sensors, and security technologies.
Infineon plays a significant role in enabling energy efficiency and sustainable solutions in the electronics industry. Its products are widely used in applications ranging from power supplies and electric vehicles to renewable energy systems and smart grids. The company is committed to innovation and quality, investing heavily in research and development to maintain a competitive edge in the rapidly evolving semiconductor market. With a global presence, Infineon serves customers in diverse sectors, providing essential components that enhance performance and reliability in electronic systems.
Infineon plays a significant role in enabling energy efficiency and sustainable solutions in the electronics industry. Its products are widely used in applications ranging from power supplies and electric vehicles to renewable energy systems and smart grids. The company is committed to innovation and quality, investing heavily in research and development to maintain a competitive edge in the rapidly evolving semiconductor market. With a global presence, Infineon serves customers in diverse sectors, providing essential components that enhance performance and reliability in electronic systems.
Application
The IRF135B203 is an N-channel MOSFET primarily used in power management applications. Its key application areas include:
1. Switching Power Supplies: For efficient power conversion in DC-DC converters.
2. Motor Control: Used in motor drivers for controlling speed and direction in various electric motors.
3. LED Drivers: For regulating current in LED lighting applications.
4. Audio Amplifiers: Employed in Class D amplifiers for improved efficiency.
5. Overcurrent Protection Circuits: Used in circuit protection designs to manage load conditions.
These applications benefit from the MOSFET's high efficiency, fast switching speed, and thermal performance.
1. Switching Power Supplies: For efficient power conversion in DC-DC converters.
2. Motor Control: Used in motor drivers for controlling speed and direction in various electric motors.
3. LED Drivers: For regulating current in LED lighting applications.
4. Audio Amplifiers: Employed in Class D amplifiers for improved efficiency.
5. Overcurrent Protection Circuits: Used in circuit protection designs to manage load conditions.
These applications benefit from the MOSFET's high efficiency, fast switching speed, and thermal performance.
Package
The IRF135B203 is typically packaged in a TO-220 form factor, which is designed for high-power applications, allowing for efficient heat dissipation.
