IRF200P222

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IRF200P222

+BOM

MOSFET N-CH 200V 182A TO247AC

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Specifications

Attribute Value
Package / Case Tube
Series StrongIRFET™
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain(Id) @ 25°C 182A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 6.6mOhm @ 82A, 10V
Vgs(th)(Max) @ Id 4V @ 270µA
Gate Charge(Qg)(Max) @ Vgs 203 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 9820 pF @ 50 V
Power Dissipation (Max) 556W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247AC

Overview

Description

The IRF200P222 is a specific model of a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency power management applications. Manufactured by Infineon Technologies, this component is part of the OptiMOS series, known for its low on-state resistance and high-speed switching capabilities. The IRF200P222 is typically used in applications such as DC-DC converters, synchronous rectification in switched-mode power supplies (SMPS), and other power management systems requiring efficient energy conversion.
Key features of the IRF200P222 include a low R_DS(on), which minimizes conduction losses, and a robust design that can handle high currents and voltages. These characteristics make it suitable for use in both industrial and consumer electronics where efficiency and reliability are critical. Additionally, the MOSFET's design allows for reduced power dissipation, improving overall system performance. The IRF200P222 is often chosen for applications that demand high efficiency and compact designs, contributing to energy savings and prolonged device life.

Equivalent

The IRF200P222 is a power MOSFET. Equivalent products may include other MOSFETs with similar voltage, current rating, and performance characteristics. Some potential equivalents might be the IRF540N, IRF740, or IRF840, depending on the specific requirements such as voltage, current, and package type. Ensure specifications like RDS(on), VDS, and ID match your application needs before choosing a replacement. Always consult the datasheets for precise comparisons.

Features

The IRF200P222 is a power MOSFET known for its efficiency and reliability in various electronic applications. Key features include:
1. N-Channel MOSFET: This type of MOSFET is suitable for high-speed switching applications.
2. Voltage and Current Ratings: It typically handles a high drain-source voltage and current, making it apt for demanding applications.
3. Low On-Resistance: This feature ensures minimal power loss and higher efficiency during operation.
4. Fast Switching Speed: The MOSFET supports rapid switching, improving performance in switching power supplies and motor control applications.
5. Robust Design: It is designed to withstand harsh environmental conditions and is often used in automotive and industrial applications.
6. Thermal Management: Equipped with features for effective heat dissipation, ensuring stable operation under high power conditions.
7. RoHS Compliant: The device adheres to safety and environmental standards, making it suitable for modern electronic designs.
These features make the IRF200P222 a versatile choice for power management and control applications in various industries.

Pinout

The IRF200P222 is likely a specific part number for a component in the IRF series, which typically denotes power MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) manufactured by International Rectifier (now part of Infineon Technologies). However, without an exact datasheet or specific model reference, it's challenging to provide precise details for that particular part number, as it doesn't appear to be widely recognized.
Generally, an IRF series MOSFET comes in a TO-220 or similar package, usually featuring three pins: Gate (G), Drain (D), and Source (S). The Gate controls the current flow between the Drain and Source. The TO-220 package, common for such components, has the Drain connected to the metal tab and the middle pin, while the other two pins are the Gate and Source.
For accurate pin count and function, please consult the specific datasheet for the IRF200P222 or contact the manufacturer or supplier for detailed specifications.

Manufacturer

The IRF200P222 is manufactured by International Rectifier, which is part of Infineon Technologies. Infineon Technologies, a German semiconductor manufacturer, acquired International Rectifier in 2015. Infineon is known for producing a wide array of semiconductor solutions, including power semiconductors, microcontrollers, sensors, and security ICs. The company serves various industries such as automotive, industrial, and consumer electronics, focusing on energy efficiency, mobility, and security.

Application

The IRF200P222 is a power MOSFET, typically used in applications requiring efficient switching and handling of high currents and voltages. Common application areas include:
1. Power Supplies: Used in switch-mode power supplies for efficient energy conversion.
2. Motor Control: Employed in motor drivers for controlling speed and direction in industrial and consumer applications.
3. DC-DC Converters: Utilized in step-up and step-down voltage converters for electronics.
4. Inverters: Key component in solar inverters and uninterruptible power supplies (UPS).
5. Automotive Systems: Applied in electric vehicle powertrains and control systems.
6. LED Lighting: Used for driving high-power LEDs efficiently.
These applications leverage the MOSFET's fast switching and high-efficiency characteristics.

Package

The IRF200P222 is housed in a TO-220 package, which is a common type of package for power transistors and MOSFETs. It features three leads and a metal tab for mounting and heat dissipation, making it suitable for various electronic applications requiring efficient thermal management.

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