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IRF5210PBF
+BOMMOSFET P-CH 100V 40A TO220AB
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ManufacturerInfineon Technologies
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Mfr. Part #IRF5210PBF
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Datasheet IRF5210PBF DataSheet
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Package TO-220-3
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In Stock2564
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Specifications
| Attribute | Value |
| Package / Case | Tube |
| Series | HEXFET® |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain(Id) @ 25°C | 40A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 60mOhm @ 24A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 180 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 2700 pF @ 25 V |
| Power Dissipation (Max) | 200W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
Overview
Description
The IRF5210PBF is a P-channel power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency power management applications. It is part of the HEXFET® family, known for delivering low on-state resistance and robust performance. With its P-channel configuration, the IRF5210PBF allows easier driving of loads in low-side switching applications. Key features include:
1. Voltage and Current Ratings: Typically rated for a drain-source voltage (V_DS) of -100V and continuous drain current (I_D) up to -41A, making it suitable for medium to high power operations.
2. R_DS(on): This MOSFET offers low on-resistance, enhancing efficiency by reducing power losses, which is crucial for applications like DC-DC converters, motor drives, and other switching applications.
3. Package: It often comes in a TO-220 package, which provides good thermal performance and ease of mounting in various circuit designs.
4. Applications: Commonly used in automotive, industrial, and consumer electronics for power switching, load switching, and other power management functions.
The IRF5210PBF's robust design makes it a reliable choice for designers looking for efficient and effective power control solutions.
1. Voltage and Current Ratings: Typically rated for a drain-source voltage (V_DS) of -100V and continuous drain current (I_D) up to -41A, making it suitable for medium to high power operations.
2. R_DS(on): This MOSFET offers low on-resistance, enhancing efficiency by reducing power losses, which is crucial for applications like DC-DC converters, motor drives, and other switching applications.
3. Package: It often comes in a TO-220 package, which provides good thermal performance and ease of mounting in various circuit designs.
4. Applications: Commonly used in automotive, industrial, and consumer electronics for power switching, load switching, and other power management functions.
The IRF5210PBF's robust design makes it a reliable choice for designers looking for efficient and effective power control solutions.
Equivalent
The IRF5210PBF is a P-channel MOSFET. Equivalent or similar products include:
- IRF9540N
- FQP27P06
- STP55PF06
These alternatives have similar voltage and current ratings but ensure to verify the specific parameters like V_DS, I_D, R_DS(on), and package type to ensure compatibility with your application.
- IRF9540N
- FQP27P06
- STP55PF06
These alternatives have similar voltage and current ratings but ensure to verify the specific parameters like V_DS, I_D, R_DS(on), and package type to ensure compatibility with your application.
Features
The IRF5210PBF is a P-channel MOSFET designed for applications requiring efficient switching and low on-state resistance. Key features include:
1. Vds (Drain-Source Voltage): It can handle up to -100V, making it suitable for high-voltage applications.
2. Current Capacity: Capable of continuous drain current up to -41A, allowing for substantial power handling.
3. Rds(on) (On-State Resistance): Exhibits low on-state resistance, typically around 0.065 ohms, which minimizes power loss and heat generation.
4. Qg (Total Gate Charge): The total gate charge is relatively low, improving the efficiency and speed of switching operations.
5. Thermal Performance: The device is designed to operate efficiently over a wide range of temperatures, with a maximum junction temperature of 175°C.
6. Package Type: Available in a TO-220 package, which offers ease of mounting and excellent thermal dissipation.
7. Applications: It is commonly used in power management, motor control, and DC-DC conversion applications.
These features make the IRF5210PBF a versatile choice for high-efficiency power electronic circuits.
1. Vds (Drain-Source Voltage): It can handle up to -100V, making it suitable for high-voltage applications.
2. Current Capacity: Capable of continuous drain current up to -41A, allowing for substantial power handling.
3. Rds(on) (On-State Resistance): Exhibits low on-state resistance, typically around 0.065 ohms, which minimizes power loss and heat generation.
4. Qg (Total Gate Charge): The total gate charge is relatively low, improving the efficiency and speed of switching operations.
5. Thermal Performance: The device is designed to operate efficiently over a wide range of temperatures, with a maximum junction temperature of 175°C.
6. Package Type: Available in a TO-220 package, which offers ease of mounting and excellent thermal dissipation.
7. Applications: It is commonly used in power management, motor control, and DC-DC conversion applications.
These features make the IRF5210PBF a versatile choice for high-efficiency power electronic circuits.
Pinout
The IRF5210PBF is a P-channel MOSFET with a pin count of 3. The pin configuration is as follows:
1. Gate (G): This is the control pin that regulates the flow of current between the source and drain.
2. Drain (D): This is where the current exits the transistor; it's connected to the load.
3. Source (S): This is where the current enters the transistor from the power source.
The primary function of the IRF5210PBF is to act as a switch or amplifier in electronic circuits. It is used in applications that require efficient power management, such as in power supplies, motor drivers, and other high-current applications. The negative gate-source voltage controls the device, allowing it to turn on/off the current flow between the source and drain.
1. Gate (G): This is the control pin that regulates the flow of current between the source and drain.
2. Drain (D): This is where the current exits the transistor; it's connected to the load.
3. Source (S): This is where the current enters the transistor from the power source.
The primary function of the IRF5210PBF is to act as a switch or amplifier in electronic circuits. It is used in applications that require efficient power management, such as in power supplies, motor drivers, and other high-current applications. The negative gate-source voltage controls the device, allowing it to turn on/off the current flow between the source and drain.
Manufacturer
The IRF5210PBF is manufactured by Infineon Technologies AG. Infineon is a German semiconductor manufacturer that specializes in designing, developing, and producing a wide range of semiconductor products. These products are used in various applications, including automotive, industrial, communications, and consumer electronics. The company is known for its expertise in power semiconductors, microcontrollers, sensors, and secure communication solutions. Infineon is a global leader in the semiconductor industry and focuses on innovations that drive energy efficiency, mobility, and security in electronic applications.
Application
The IRF5210PBF is a P-channel power MOSFET commonly used in various applications due to its high current carrying capability and low on-state resistance. Key application areas include:
1. Switching Power Supplies: Used in DC-DC converters and other power supply circuits.
2. Motor Control: Suitable for driving motors in automotive and industrial applications.
3. Load Switches: Effective in controlling power to different loads due to fast switching capabilities.
4. Inverters: Utilized in inverter circuits for renewable energy systems.
5. Battery Management Systems: Plays a role in managing battery charge and discharge cycles.
6. Consumer Electronics: Used in devices requiring efficient power management and fast switching.
These features make it versatile for use in both commercial and industrial sectors.
1. Switching Power Supplies: Used in DC-DC converters and other power supply circuits.
2. Motor Control: Suitable for driving motors in automotive and industrial applications.
3. Load Switches: Effective in controlling power to different loads due to fast switching capabilities.
4. Inverters: Utilized in inverter circuits for renewable energy systems.
5. Battery Management Systems: Plays a role in managing battery charge and discharge cycles.
6. Consumer Electronics: Used in devices requiring efficient power management and fast switching.
These features make it versatile for use in both commercial and industrial sectors.
Package
The IRF5210PBF is typically available in a TO-220 package, which is common for power MOSFETs. This package type provides efficient heat dissipation and is suitable for through-hole mounting in high-power applications.
