IRF540

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IRF540

+BOM

MOSFET N-CH 100V 28A TO220AB

  • ManufacturerVishay Siliconix

  • Mfr. Part #IRF540

  • In Stock1604

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Specifications

Attribute Value
Part Status Obsolete
Base Product Number IRF540
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 28A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 77mOhm @ 17A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 72 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1700 pF @ 25 V
Power Dissipation (Max) 150W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Packaging Tube

Overview

Description

The IRF540 is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) commonly used in electronic applications for switching and amplification purposes. It is known for its high current carrying capability, typically up to 33A, and a drain-source voltage (V_DS) of 100V, making it suitable for medium to high power applications. The MOSFET operates efficiently due to its low on-state resistance (R_DS(on)), which minimizes power loss during conduction.
The IRF540 is often favored in applications like motor control, power supplies, and amplifiers due to its fast switching speed and robust thermal performance. It is typically housed in a TO-220 package, which provides good heat dissipation. The gate-source voltage (V_GS) required to turn on the transistor is around 10V, ensuring it can be driven by standard logic levels when appropriate interfacing is used.
Overall, the IRF540 is valued for its versatility, reliability, and ease of use in a variety of electronic circuits.

Equivalent

The IRF540 is a N-channel MOSFET commonly used for switching and amplification. Equivalent products include the IRF540N, IRFZ44N, and IRLB8743PBF. Other alternatives might be the STP55NF06L, IRLB3034, and FDP6030BL. These equivalents will have similar specifications in terms of voltage, current, and switching characteristics, but ensure to verify the datasheets for specific application requirements.

Features

The IRF540 is an N-channel MOSFET known for its efficiency in switching and amplifying electronic signals. Key features include:
1. Voltage and Current Ratings: It can handle a maximum drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) of up to 28A.
2. R_DS(on): The on-state resistance is typically 0.044 ohms, which indicates low power loss during operation.
3. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) ranges from 2V to 4V, making it suitable for low-voltage drive.
4. Fast Switching: The IRF540 offers fast switching speeds, which is ideal for high-frequency applications.
5. Package: It is commonly available in the TO-220 package, providing good thermal performance and ease of mounting.
6. Applications: Used in power management, motor drives, inverters, and amplifiers.
7. Thermal Performance: The device has a high power dissipation capability of up to 150W, with a junction temperature range of -55°C to 175°C.
These features make the IRF540 a versatile choice for a wide range of electronic applications.

Pinout

The IRF540 is a N-channel MOSFET commonly used for switching and amplification purposes. It typically comes in a TO-220 package with three pins:
1. Gate (G): This is the control pin used to turn the MOSFET on or off. Applying the appropriate voltage to the gate allows or prevents current flow between the drain and source.
2. Drain (D): This pin is the terminal through which the current enters the MOSFET when it is in the conducting state.
3. Source (S): The current exits the MOSFET through this terminal. It is connected to the negative side of the circuit when the MOSFET is used in a common-source configuration.
The IRF540 is designed for high-speed switching applications and can handle a drain-source voltage (V_DS) of up to 100V and continuous drain current (I_D) of about 33A. It is widely used in power management, motor control, and various other electronic applications.

Manufacturer

The IRF540 is a type of N-channel MOSFET, and it was originally manufactured by International Rectifier (IR). International Rectifier was a company that specialized in power management technology, including semiconductors and integrated circuits. They played a significant role in developing and producing power MOSFETs, IGBTs, and other power electronics components used in a wide range of applications from consumer electronics to industrial systems.
In 2015, International Rectifier was acquired by Infineon Technologies, a German semiconductor manufacturer. Infineon is one of the leading companies in the global semiconductor market, focusing on automotive, industrial power control, power management, and digital security solutions. As a result of this acquisition, Infineon now manufactures and sells the IRF540, along with a broad portfolio of power electronics and semiconductor devices.

Application

The IRF540 is a popular N-channel MOSFET used in various applications due to its high current capability and voltage ratings. Key application areas include:
1. Power Supplies: Used in switching power supplies for efficient voltage regulation.
2. Motor Control: Employed in motor drivers for controlling DC motors and stepper motors.
3. Lighting Systems: Utilized in LED drivers and dimmers for lighting control.
4. Inverters: Used in DC-AC inverters for renewable energy systems.
5. Audio Amplifiers: Applied in the output stages for high-power audio amplification.
6. Battery Management: Integrated into battery charging and protection circuits.
Its robustness makes it suitable for both industrial and consumer electronics applications.

Package

The IRF540 is typically available in a TO-220 package, which is a standard through-hole package used for power semiconductors. This package type is known for its capability to handle high power levels and facilitate effective heat dissipation through the metal tab that can be attached to a heatsink.

Frequently Asked Questions


Q: What is the maximum drain-source voltage for the IRF540?
A: The IRF540 has a maximum drain-to-source voltage (Vdss) of 100 V, suitable for moderate voltage applications.


Q: Can this MOSFET be driven with a 5V logic level?
A: No, it requires a drive voltage of 10V for optimal Rds On, as its threshold voltage (Vgs(th)) is up to 4V.


Q: What is the continuous drain current rating at 25°C?
A: The continuous drain current (Id) is 28A (Tc) at 25°C case temperature, enabling high-current switching.


Q: What is the typical on-resistance value?
A: The maximum Rds On is 77mOhm at Vgs=10V and Id=17A, ensuring low conduction losses.


Q: What package type is the IRF540 available in?
A: It is offered in a through-hole TO-220-3 package (TO-220AB), suitable for heatsink mounting.


Q: Does the IRF540 support high-frequency switching?
A: With a gate charge of 72 nC @ 10V and input capacitance of 1700 pF, it is suitable for moderate-speed switching applications.


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