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IRF540
+BOMMOSFET N-CH 100V 28A TO220AB
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ManufacturerVishay Siliconix
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Mfr. Part #IRF540
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In Stock1604
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Specifications
| Attribute | Value |
| Part Status | Obsolete |
| Base Product Number | IRF540 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 28A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 77mOhm @ 17A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 72 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1700 pF @ 25 V |
| Power Dissipation (Max) | 150W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
| Package / Case | TO-220-3 |
| Packaging | Tube |
Overview
Description
The IRF540 is often favored in applications like motor control, power supplies, and amplifiers due to its fast switching speed and robust thermal performance. It is typically housed in a TO-220 package, which provides good heat dissipation. The gate-source voltage (V_GS) required to turn on the transistor is around 10V, ensuring it can be driven by standard logic levels when appropriate interfacing is used.
Overall, the IRF540 is valued for its versatility, reliability, and ease of use in a variety of electronic circuits.
Equivalent
Features
1. Voltage and Current Ratings: It can handle a maximum drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) of up to 28A.
2. R_DS(on): The on-state resistance is typically 0.044 ohms, which indicates low power loss during operation.
3. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) ranges from 2V to 4V, making it suitable for low-voltage drive.
4. Fast Switching: The IRF540 offers fast switching speeds, which is ideal for high-frequency applications.
5. Package: It is commonly available in the TO-220 package, providing good thermal performance and ease of mounting.
6. Applications: Used in power management, motor drives, inverters, and amplifiers.
7. Thermal Performance: The device has a high power dissipation capability of up to 150W, with a junction temperature range of -55°C to 175°C.
These features make the IRF540 a versatile choice for a wide range of electronic applications.
Pinout
1. Gate (G): This is the control pin used to turn the MOSFET on or off. Applying the appropriate voltage to the gate allows or prevents current flow between the drain and source.
2. Drain (D): This pin is the terminal through which the current enters the MOSFET when it is in the conducting state.
3. Source (S): The current exits the MOSFET through this terminal. It is connected to the negative side of the circuit when the MOSFET is used in a common-source configuration.
The IRF540 is designed for high-speed switching applications and can handle a drain-source voltage (V_DS) of up to 100V and continuous drain current (I_D) of about 33A. It is widely used in power management, motor control, and various other electronic applications.
Manufacturer
In 2015, International Rectifier was acquired by Infineon Technologies, a German semiconductor manufacturer. Infineon is one of the leading companies in the global semiconductor market, focusing on automotive, industrial power control, power management, and digital security solutions. As a result of this acquisition, Infineon now manufactures and sells the IRF540, along with a broad portfolio of power electronics and semiconductor devices.
Application
1. Power Supplies: Used in switching power supplies for efficient voltage regulation.
2. Motor Control: Employed in motor drivers for controlling DC motors and stepper motors.
3. Lighting Systems: Utilized in LED drivers and dimmers for lighting control.
4. Inverters: Used in DC-AC inverters for renewable energy systems.
5. Audio Amplifiers: Applied in the output stages for high-power audio amplification.
6. Battery Management: Integrated into battery charging and protection circuits.
Its robustness makes it suitable for both industrial and consumer electronics applications.
Package
Frequently Asked Questions
Q: What is the maximum drain-source voltage for the IRF540?
A: The IRF540 has a maximum drain-to-source voltage (Vdss) of 100 V, suitable for moderate voltage applications.
Q: Can this MOSFET be driven with a 5V logic level?
A: No, it requires a drive voltage of 10V for optimal Rds On, as its threshold voltage (Vgs(th)) is up to 4V.
Q: What is the continuous drain current rating at 25°C?
A: The continuous drain current (Id) is 28A (Tc) at 25°C case temperature, enabling high-current switching.
Q: What is the typical on-resistance value?
A: The maximum Rds On is 77mOhm at Vgs=10V and Id=17A, ensuring low conduction losses.
Q: What package type is the IRF540 available in?
A: It is offered in a through-hole TO-220-3 package (TO-220AB), suitable for heatsink mounting.
Q: Does the IRF540 support high-frequency switching?
A: With a gate charge of 72 nC @ 10V and input capacitance of 1700 pF, it is suitable for moderate-speed switching applications.