IRF620

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IRF620

+BOM

MOSFET N-CH 200V 6A TO220AB

  • ManufacturerSTMicroelectronics

  • Mfr. Part #IRF620

  • Datasheet IRF620 DataSheet

  • In Stock9323

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Specifications

Attribute Value
Supplier STMicroelectronics
Package Tube
Series PowerMESH™ II
ProductStatus Obsolete
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 200 V
Current-ContinuousDrain(Id)@25°C 6A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 800mOhm @ 3A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 27 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 350 pF @ 25 V
PowerDissipation(Max) 70W (Tc)
OperatingTemperature -65°C ~ 150°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220