IRF630NPBF

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IRF630NPBF

+BOM

MOSFET N-CH 200V 9.3A TO220AB

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Specifications

Attribute Value
Package / Case Tube
Series HEXFET®
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain(Id) @ 25°C 9.3A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 300mOhm @ 5.4A, 10V
Vgs(th)(Max) @ Id 4V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 35 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 575 pF @ 25 V
Power Dissipation (Max) 82W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB

Overview

Description

The IRF630NPBF is an N-channel power MOSFET produced by Infineon Technologies. It is designed for high-speed switching applications and is often used in power management, consumer electronics, and automotive systems. The device features a maximum drain-source voltage (V_DS) of 200V and a continuous drain current (I_D) of 9A. It has a low on-state resistance, which helps minimize power loss and improve efficiency.
The IRF630NPBF is built with advanced process technology, offering fast switching speeds and robust performance. It comes in a TO-220 package, which provides good thermal performance and easy mounting. The MOSFET is also characterized by its high avalanche energy rating and ruggedness, making it suitable for use in demanding environments.
Overall, the IRF630NPBF is valued for its efficiency, speed, and reliability in various power conversion and switching applications.

Equivalent

The IRF630NPBF is a N-channel MOSFET. Equivalent products include the STMicroelectronics STP12NK50Z, ON Semiconductor FDPF12N50FT, and Fairchild Semiconductor FQP12N50. These alternatives have similar voltage and current ratings and can be used in similar applications, such as switching and power management. Always check the datasheet for specific parameters to ensure suitability for your application.

Features

The IRF630NPBF is an N-channel power MOSFET known for its efficiency and reliability. Key features include:
1. VDSS Rating: It has a drain-source voltage (VDSS) rating of 200V, making it suitable for high-voltage applications.
2. Continuous Drain Current: It can handle a continuous drain current of up to 9A at 25°C.
3. RDS(on): The on-resistance is low, typically around 0.4 ohms, which minimizes power loss and improves efficiency.
4. Fast Switching: The MOSFET is designed for fast switching speeds, enhancing its performance in high-frequency applications.
5. TO-220 Package: It comes in a TO-220 package, which provides good thermal performance and is easy to mount.
6. Thermal Resistance: The junction-to-case thermal resistance is relatively low, aiding in heat dissipation.
7. Safe Operating Area: It has a robust safe operating area, ensuring reliability under various load conditions.
These features make the IRF630NPBF ideal for use in power supplies, motor control, and other applications requiring efficient power switching.

Pinout

The IRF630NPBF is a N-channel power MOSFET. It comes in a TO-220 package with three pins. The pin configuration and their functions are as follows:
1. Gate (G): This pin is responsible for controlling the MOSFET. A voltage applied to the gate controls the current flow between the drain and source.
2. Drain (D): This pin is connected to the load. The drain-source current flows when the MOSFET is in the 'on' state.
3. Source (S): This pin is connected to the ground or the negative supply voltage. It is the return path for the current flowing through the drain.
The IRF630NPBF is used for switching applications and power amplification due to its ability to handle high voltage and current.

Manufacturer

The IRF630NPBF is manufactured by Infineon Technologies. Infineon is a leading global semiconductor company that focuses on delivering power systems, sensor systems, and IoT solutions. The company specializes in a variety of sectors including automotive, industrial power control, power management, and digital security solutions. Infineon's products are used in a wide range of applications, from automotive electronics and industrial automation to consumer electronics and communication systems.

Application

The IRF630NPBF is a N-channel MOSFET commonly used in various applications due to its high efficiency and fast switching capabilities. Key application areas include:
1. Power Supplies: Used in switched-mode power supplies for efficient power conversion.
2. Motor Control: Suitable for driving motors in industrial and consumer electronics.
3. DC-DC Converters: Utilized in voltage regulation and conversion circuits.
4. Lighting: Employed in LED and other lighting applications for dimming and power management.
5. Audio Amplifiers: Acts as a switch in high-power audio amplification systems.
6. Uninterruptible Power Supplies (UPS): Plays a role in battery charging and inverter circuits.
These characteristics make it suitable for various high-frequency and high-efficiency applications.

Package

The IRF630NPBF is typically available in a TO-220 package.

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