IRF630NSTRLPBF

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IRF630NSTRLPBF

+BOM

MOSFET N-CH 200V 9.3A D2PAK

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Specifications

Attribute Value
Package Tape & Reel (TR),Cut Tape (CT),Bulk
Series HEXFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 200 V
Current-ContinuousDrain(Id)@25°C 9.3A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 300mOhm @ 5.4A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 35 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 575 pF @ 25 V
PowerDissipation(Max) 82W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Surface Mount
SupplierDevicePackage D2PAK

Overview

Description

The IRF630NSTRLPBF is an N-channel power MOSFET from Infineon Technologies, designed for high-efficiency switching applications. Key features include:
- Voltage Rating: 200V
- Current Rating: 9.3A (continuous)
- Low On-Resistance (RDS(on)): 0.4Ω (max at 10V VGS)
- Fast Switching: Optimized for speed with low gate charge (28nC typical).
- Package: TO-262 (D2PAK), suitable for power circuits.
Common uses include DC-DC converters, motor control, and power supplies. Its robust design ensures reliability in demanding environments. Always refer to the datasheet for detailed specifications and application guidelines.

Equivalent

Equivalent products to the IRF630NSTRLPBF (N-channel MOSFET, 200V, 9.3A, 0.4Ω) include:
- IRF630PBF (same specs, different package)
- IRF640N (200V, 18A, 0.15Ω)
- STP16NF06 (60V, 16A, 0.08Ω) – lower voltage
- IRF740 (400V, 10A, 0.55Ω) – higher voltage
Check datasheets for exact compatibility.

Features

The IRF630NSTRLPBF is an N-channel MOSFET with the following key features:
- Voltage Rating: 200V
- Current Rating: 9.3A (continuous)
- RDS(on): 0.4Ω (max at VGS=10V)
- Fast Switching: Low gate charge (28nC) and fast switching speed
- Power Dissipation: 74W (with proper heatsinking)
- Package: TO-263 (D2PAK), surface-mount
- Gate-Source Voltage (VGS): ±20V (max)
- Avalanche Energy Rated: Robust for inductive loads
Ideal for power switching in DC-DC converters, motor control, and amplifiers.

Manufacturer

The IRF630NSTRLPBF is manufactured by Infineon Technologies, a leading German semiconductor company. Infineon specializes in power electronics, automotive systems, and IoT solutions, known for high-performance MOSFETs, microcontrollers, and sensors. The company serves industries like automotive, industrial, and consumer electronics, emphasizing energy efficiency and innovation.
The IRF630NSTRLPBF is a N-channel power MOSFET designed for switching applications, offering low on-resistance and high-speed performance.

Application

The IRF630NSTRLPBF, an N-channel MOSFET, is commonly used in:
1. Power Supplies – Switching regulators, DC-DC converters.
2. Motor Control – H-bridge drivers, PWM motor drives.
3. Amplifiers – Audio and RF amplification circuits.
4. Lighting Systems – LED drivers, ballast controls.
5. Automotive Electronics – Relay replacements, load switches.
Its high current (9A) and voltage (200V) handling make it suitable for medium-power switching applications.

Package

The IRF630NSTRLPBF is a power MOSFET housed in a TO-262 (D2PAK) package. This surface-mount package is designed for high-power applications, offering efficient thermal performance and a compact footprint. It is lead-free (Pb-free) and RoHS compliant.

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