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IRF6646TRPBF
+BOMMOSFET N-CH 80V 12A DIRECTFET
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ManufacturerInfineon Technologies
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Mfr. Part #IRF6646TRPBF
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Datasheet IRF6646TRPBF DataSheet
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In Stock18906
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Specifications
| Attribute | Value |
| Supplier | Infineon Technologies |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | HEXFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 80 V |
| Current - Continuous Drain(Id) @ 25°C | 12A (Ta), 68A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 9.5mOhm @ 12A, 10V |
| Vgs(th)(Max) @ Id | 4.9V @ 150µA |
| Gate Charge(Qg)(Max) @ Vgs | 50 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 2060 pF @ 25 V |
| Power Dissipation (Max) | 2.8W (Ta), 89W (Tc) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | DIRECTFET™ MN |
Overview
Description
The IRF6646TRPBF is a HEXFET power MOSFET from Infineon Technologies, designed for high-efficiency switching applications. This N-channel MOSFET features a low on-resistance, typically around 18 milliohms, which results in minimized conduction losses. It's housed in a compact SO-8 package, making it suitable for space-constrained applications.
The device is characterized by its ability to handle a continuous drain current of approximately 13A, with a maximum drain-source voltage (V_ds) of 60V. Its high-speed switching capability and robust design make it ideal for use in power management, motor control, and DC-DC converters. Additionally, the IRF6646TRPBF is lead-free and RoHS-compliant, aligning with environmental regulations.
Overall, the IRF6646TRPBF is valued for its efficiency, compact form, and reliability, making it a common choice in both consumer electronics and industrial applications where high performance is essential.
The device is characterized by its ability to handle a continuous drain current of approximately 13A, with a maximum drain-source voltage (V_ds) of 60V. Its high-speed switching capability and robust design make it ideal for use in power management, motor control, and DC-DC converters. Additionally, the IRF6646TRPBF is lead-free and RoHS-compliant, aligning with environmental regulations.
Overall, the IRF6646TRPBF is valued for its efficiency, compact form, and reliability, making it a common choice in both consumer electronics and industrial applications where high performance is essential.
Equivalent
The IRF6646TRPBF is a specific MOSFET transistor. Equivalent products with similar specifications might include:
1. NXP BUK9235-55A
2. ON Semiconductor NTD3055-150
3. Infineon IRFZ44N
4. Vishay SI4448DY
Ensure to verify parameters such as voltage rating, current capacity, package type, and RDS(on) to confirm compatibility for your application. Always consult datasheets for detailed comparisons.
1. NXP BUK9235-55A
2. ON Semiconductor NTD3055-150
3. Infineon IRFZ44N
4. Vishay SI4448DY
Ensure to verify parameters such as voltage rating, current capacity, package type, and RDS(on) to confirm compatibility for your application. Always consult datasheets for detailed comparisons.
Features
The IRF6646TRPBF is a HEXFET power MOSFET manufactured by Infineon Technologies. It features an N-channel MOSFET configuration optimized for high efficiency and performance in applications requiring fast switching. The device is housed in a 5-Pin TSOP package, aiding in compact design.
Key features include:
- Voltage Rating: It supports a drain-source voltage (V_DS) of up to 30V.
- Current Rating: Maximum continuous drain current (I_D) is around 13A.
- Low On-Resistance: The MOSFET exhibits low R_DS(on), enhancing efficiency by reducing conduction losses.
- Fast Switching: It has fast switching capabilities, making it suitable for high-speed applications.
- Thermal Performance: Designed to handle high temperatures with efficient heat dissipation characteristics.
- Applications: Commonly used in power management, DC-DC converters, and motor control circuits.
This MOSFET is RoHS compliant and ideal for applications requiring high power density and efficiency.
Key features include:
- Voltage Rating: It supports a drain-source voltage (V_DS) of up to 30V.
- Current Rating: Maximum continuous drain current (I_D) is around 13A.
- Low On-Resistance: The MOSFET exhibits low R_DS(on), enhancing efficiency by reducing conduction losses.
- Fast Switching: It has fast switching capabilities, making it suitable for high-speed applications.
- Thermal Performance: Designed to handle high temperatures with efficient heat dissipation characteristics.
- Applications: Commonly used in power management, DC-DC converters, and motor control circuits.
This MOSFET is RoHS compliant and ideal for applications requiring high power density and efficiency.
Pinout
The IRF6646TRPBF is a power MOSFET with an SO-8 package, featuring a pin count of 8. This MOSFET is designed for applications requiring high-speed switching and efficiency. Key functions and features include:
1. Low On-Resistance: The MOSFET features low R_DS(on), minimizing power loss and improving efficiency.
2. Fast Switching: It supports fast switching speeds, making it suitable for applications like DC-DC converters, power management, and motor control.
3. N-channel Enhancement Mode: It operates with a positive voltage applied to the gate relative to the source to enhance conductivity.
The typical pin configuration for an SO-8 packaged MOSFET like the IRF6646TRPBF is as follows:
1. Drain (D): Pins 5, 6, 7, and 8.
2. Source (S): Pins 1, 2, 3, and 4.
3. Gate (G): Usually, one of the middle pins but can depend on the specific layout.
It's essential to refer to the datasheet for detailed specifications and pin configuration to ensure proper integration into your design.
1. Low On-Resistance: The MOSFET features low R_DS(on), minimizing power loss and improving efficiency.
2. Fast Switching: It supports fast switching speeds, making it suitable for applications like DC-DC converters, power management, and motor control.
3. N-channel Enhancement Mode: It operates with a positive voltage applied to the gate relative to the source to enhance conductivity.
The typical pin configuration for an SO-8 packaged MOSFET like the IRF6646TRPBF is as follows:
1. Drain (D): Pins 5, 6, 7, and 8.
2. Source (S): Pins 1, 2, 3, and 4.
3. Gate (G): Usually, one of the middle pins but can depend on the specific layout.
It's essential to refer to the datasheet for detailed specifications and pin configuration to ensure proper integration into your design.
Manufacturer
The IRF6646TRPBF is manufactured by Infineon Technologies. Infineon is a German semiconductor company that specializes in the design, manufacture, and supply of a wide range of semiconductor products. These products are used in various applications, including automotive, industrial power control, power management, digital security, and IoT. Infineon is known for its focus on high-performance and energy-efficient solutions and is one of the leading companies in the global semiconductor industry.
Application
The IRF6646TRPBF is a power MOSFET commonly used in various applications, including:
1. Switching Power Supplies: Efficient for DC-DC converters in both isolated and non-isolated configurations.
2. Motor Drives: Suitable for driving motors in industrial and consumer applications due to its low on-resistance and fast switching.
3. Battery Management: Used in battery protection circuits and charging systems due to its high efficiency and reliability.
4. Telecommunications: Integral in power management for telecom infrastructure, ensuring efficient energy distribution.
5. Automotive Electronics: Utilized in automotive systems for power distribution and management.
6. Consumer Electronics: Employed in power regulation for devices like TVs and audio systems.
Its low gate charge and fast switching capabilities make it ideal for high-efficiency power applications.
1. Switching Power Supplies: Efficient for DC-DC converters in both isolated and non-isolated configurations.
2. Motor Drives: Suitable for driving motors in industrial and consumer applications due to its low on-resistance and fast switching.
3. Battery Management: Used in battery protection circuits and charging systems due to its high efficiency and reliability.
4. Telecommunications: Integral in power management for telecom infrastructure, ensuring efficient energy distribution.
5. Automotive Electronics: Utilized in automotive systems for power distribution and management.
6. Consumer Electronics: Employed in power regulation for devices like TVs and audio systems.
Its low gate charge and fast switching capabilities make it ideal for high-efficiency power applications.
Package
The IRF6646TRPBF is typically supplied in a surface-mount package type known as SO-8, which is a standard small-outline package used for various electronic components, including MOSFETs like the IRF6646.
