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IRF7309TRPBF
+BOMMOSFET N/P-CH 30V 4A/3A 8SOIC
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ManufacturerInfineon Technologies
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Mfr. Part #IRF7309TRPBF
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Datasheet IRF7309TRPBF DataSheet
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Package SOIC-8
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In Stock5390
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Specifications
| Attribute | Value |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | N and P-Channel |
| FETFeature | Standard |
| DraintoSourceVoltage(Vdss) | 30V |
| Current-ContinuousDrain(Id)@25°C | 4A, 3A |
| RdsOn(Max)@IdVgs | 50mOhm @ 2.4A, 10V |
| Vgs(th)(Max)@Id | 1V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 25nC @ 4.5V |
| InputCapacitance(Ciss)(Max)@Vds | 520pF @ 15V |
| Power-Max | 1.4W |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 8-SOIC (0.154, 3.90mm Width) |
Overview
Description
Key features of the IRF7309TRPBF include:
- Dual N-Channel Configuration: Contains two N-channel MOSFETs in a single package, optimizing space and enhancing performance in circuits requiring multiple transistors.
- Low On-Resistance: Offers reduced power loss and improved efficiency due to its low R_DS(on).
- Fast Switching Speed: Suitable for high-frequency applications, providing efficient performance at fast switching speeds.
- Small Form Factor: Packaged in a compact surface-mount device (SMD) format, making it ideal for space-constrained designs.
- High Power Handling: Capable of handling significant power loads, contributing to its versatility in various applications.
Overall, the IRF7309TRPBF is a reliable choice for engineers looking to integrate efficient power management solutions into their electronic designs.
Equivalent
1. FDS8958A by ON Semiconductor
2. Si4925DY by Vishay
3. NTMD6N02R2 by ON Semiconductor
4. BSR403N by Infineon Technologies
When selecting an equivalent, always verify the specific electrical characteristics and package type to ensure compatibility with your application.
Features
1. Dual Channel: Contains two N-channel MOSFETs, allowing for compact designs.
2. Low On-Resistance: Offers a low R_DS(on), enhancing efficiency by minimizing power loss during operation.
3. Logic Level Gate Drive: Compatible with standard 5V or lower logic level signals, making it suitable for direct interfacing with microcontrollers and logic devices.
4. Fast Switching Speed: Ensures efficient performance in high-speed applications.
5. SO-8 Package: Comes in a small surface-mount package, facilitating space-saving designs.
6. Thermal Performance: Designed to handle significant power loads while maintaining stable thermal performance.
7. Robust Design: Provides reliable operation under various environmental conditions.
These features make the IRF7309TRPBF suitable for applications in power management, load switching, and driving inductive loads.
Pinout
1. Pin 1: Source 1 (S1)
2. Pin 2: Gate 1 (G1)
3. Pin 3: Source 2 (S2)
4. Pin 4: Gate 2 (G2)
5. Pin 5: Drain 2 (D2)
6. Pin 6: Drain 2 (D2)
7. Pin 7: Drain 1 (D1)
8. Pin 8: Drain 1 (D1)
Pins 5 and 6 are internally connected together to Drain 2, and pins 7 and 8 are internally connected to Drain 1. This pin configuration allows the device to handle separate MOSFET channels while optimizing board space and reducing component count.