Images are for reference only
IRF7313TRPBF
+BOMMOSFET 2N-CH 30V 6.5A 8-SOIC
-
ManufacturerInfineon Technologies
-
Mfr. Part #IRF7313TRPBF
-
Datasheet IRF7313TRPBF DataSheet
-
Package SOIC-8
-
In Stock4931
365 Days Quality Guarantee
7*24 hours service quarantee
90-day after-sales guarantee
Genuine Product Guarantee
Specifications
| Attribute | Value |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | 2 N-Channel (Dual) |
| FETFeature | Standard |
| DraintoSourceVoltage(Vdss) | 30V |
| Current-ContinuousDrain(Id)@25°C | 6.5A |
| RdsOn(Max)@IdVgs | 29mOhm @ 5.8A, 10V |
| Vgs(th)(Max)@Id | 1V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 33nC @ 10V |
| InputCapacitance(Ciss)(Max)@Vds | 650pF @ 25V |
| Power-Max | 2W |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 8-SOIC (0.154, 3.90mm Width) |
Overview
Description
The IRF7313TRPBF is a dual N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for power management applications. It is part of the HEXFET® Power MOSFET series, produced by Infineon Technologies. Known for its high efficiency and reliability, the IRF7313TRPBF is used in various applications, including DC-DC converters, power supplies, and motor drives.
Key features of the IRF7313TRPBF include low on-resistance, which reduces power loss and improves efficiency, and a fast switching capability, which enhances performance in high-speed applications. It operates with a maximum drain-source voltage (V_DS) of 30V and can handle a continuous drain current (I_D) of up to 6.5A per channel at 25°C. The MOSFET is housed in a compact SO-8 package, making it suitable for space-constrained designs.
The IRF7313TRPBF is designed to provide optimal performance in demanding environments, offering robustness against thermal and electrical stress. Its dual-channel configuration allows for more design flexibility and integration in circuits requiring multiple switching elements.
Key features of the IRF7313TRPBF include low on-resistance, which reduces power loss and improves efficiency, and a fast switching capability, which enhances performance in high-speed applications. It operates with a maximum drain-source voltage (V_DS) of 30V and can handle a continuous drain current (I_D) of up to 6.5A per channel at 25°C. The MOSFET is housed in a compact SO-8 package, making it suitable for space-constrained designs.
The IRF7313TRPBF is designed to provide optimal performance in demanding environments, offering robustness against thermal and electrical stress. Its dual-channel configuration allows for more design flexibility and integration in circuits requiring multiple switching elements.
Equivalent
The IRF7313TRPBF is a dual N-channel MOSFET. Equivalent products might include:
1. Diodes Incorporated NTTFS5823NLTAG - A dual N-channel MOSFET with similar specifications.
2. ON Semiconductor FDMS86200 - Offers comparable performance.
3. Vishay Si4936DY - Dual N-channel MOSFET with matching characteristics.
4. Fairchild FDS8958A - Another suitable alternative.
Ensure to verify the specifications such as voltage, current ratings, and package type when selecting an equivalent.
1. Diodes Incorporated NTTFS5823NLTAG - A dual N-channel MOSFET with similar specifications.
2. ON Semiconductor FDMS86200 - Offers comparable performance.
3. Vishay Si4936DY - Dual N-channel MOSFET with matching characteristics.
4. Fairchild FDS8958A - Another suitable alternative.
Ensure to verify the specifications such as voltage, current ratings, and package type when selecting an equivalent.
Features
The IRF7313TRPBF is a dual N-channel MOSFET designed for applications requiring efficient switching and low on-state resistance. Key features include:
1. Dual N-Channel Configuration: Contains two identical N-channel MOSFETs in a single package, allowing for compact design solutions.
2. Low On-Resistance: Offers a low R_DS(on) value, which reduces power loss and improves efficiency in power applications.
3. Voltage Rating: Typically rated for 30V, making it suitable for various low to medium voltage applications.
4. Current Handling: Capable of handling high currents, which is ideal for driving loads in power management applications.
5. Compact Package: Available in a small, surface-mount package (such as SO-8), which is efficient for space-constrained designs.
6. Fast Switching: Designed to provide rapid switching speeds, enhancing performance in switching applications.
7. Thermal Performance: Good thermal characteristics that improve reliability and performance in high-power applications.
These features make the IRF7313TRPBF suitable for use in DC-DC converters, motor drivers, and general switching applications.
1. Dual N-Channel Configuration: Contains two identical N-channel MOSFETs in a single package, allowing for compact design solutions.
2. Low On-Resistance: Offers a low R_DS(on) value, which reduces power loss and improves efficiency in power applications.
3. Voltage Rating: Typically rated for 30V, making it suitable for various low to medium voltage applications.
4. Current Handling: Capable of handling high currents, which is ideal for driving loads in power management applications.
5. Compact Package: Available in a small, surface-mount package (such as SO-8), which is efficient for space-constrained designs.
6. Fast Switching: Designed to provide rapid switching speeds, enhancing performance in switching applications.
7. Thermal Performance: Good thermal characteristics that improve reliability and performance in high-power applications.
These features make the IRF7313TRPBF suitable for use in DC-DC converters, motor drivers, and general switching applications.
Pinout
The IRF7313TRPBF is a dual N-channel MOSFET. It comes in an SO-8 package, which typically has 8 pins. The pin functions are as follows:
1. Pin 1, 2, 3 (Source 1): These pins are connected to the source terminal of the first MOSFET.
2. Pin 4 (Gate 1): This pin is connected to the gate terminal of the first MOSFET.
3. Pin 5 (Gate 2): This pin is connected to the gate terminal of the second MOSFET.
4. Pin 6, 7, 8 (Source 2): These pins are connected to the source terminal of the second MOSFET.
5. Drain 1: The drain terminal of the first MOSFET is internally connected to the metal tab on one side of the package.
6. Drain 2: The drain terminal of the second MOSFET is internally connected to the metal tab on the opposite side.
The IRF7313TRPBF is commonly used in applications such as power management, DC-DC converters, and load switches, due to its high efficiency and low on-resistance.
1. Pin 1, 2, 3 (Source 1): These pins are connected to the source terminal of the first MOSFET.
2. Pin 4 (Gate 1): This pin is connected to the gate terminal of the first MOSFET.
3. Pin 5 (Gate 2): This pin is connected to the gate terminal of the second MOSFET.
4. Pin 6, 7, 8 (Source 2): These pins are connected to the source terminal of the second MOSFET.
5. Drain 1: The drain terminal of the first MOSFET is internally connected to the metal tab on one side of the package.
6. Drain 2: The drain terminal of the second MOSFET is internally connected to the metal tab on the opposite side.
The IRF7313TRPBF is commonly used in applications such as power management, DC-DC converters, and load switches, due to its high efficiency and low on-resistance.
Manufacturer
The IRF7313TRPBF is manufactured by Infineon Technologies. Infineon is a German semiconductor manufacturing company. It was originally a part of Siemens AG, but became an independent entity in 1999. Infineon is known for producing a wide range of semiconductor solutions, including microcontrollers, power semiconductors, and security ICs. The company primarily focuses on automotive, industrial power control, power management and multimarket, and digital security solutions.
Application
The IRF7313TRPBF is a dual N-channel MOSFET widely used in various electronic applications. Key application areas include:
1. Power Management: Ideal for DC-DC converters and voltage regulation modules due to its efficient switching capabilities.
2. Switching Applications: Useful in load switching and signal amplification in low to medium power circuits.
3. Motor Control: Applicable in controlling small motors or actuators in automotive or industrial systems.
4. Consumer Electronics: Incorporated in power supply circuits for consumer devices like laptops and smartphones.
5. Battery Management Systems: Plays a role in managing and protecting battery packs, especially in portable devices.
Its compact size and efficiency make it suitable for space-constrained designs.
1. Power Management: Ideal for DC-DC converters and voltage regulation modules due to its efficient switching capabilities.
2. Switching Applications: Useful in load switching and signal amplification in low to medium power circuits.
3. Motor Control: Applicable in controlling small motors or actuators in automotive or industrial systems.
4. Consumer Electronics: Incorporated in power supply circuits for consumer devices like laptops and smartphones.
5. Battery Management Systems: Plays a role in managing and protecting battery packs, especially in portable devices.
Its compact size and efficiency make it suitable for space-constrained designs.
Package
The IRF7313TRPBF is a dual N-channel MOSFET packaged in an SO-8 (Small Outline 8-lead) package. This package type is commonly used for surface-mount applications on printed circuit boards, offering a compact footprint suitable for space-constrained designs.
