IRF7389TRPBF

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IRF7389TRPBF

+BOM

MOSFET N/P-CH 30V 8-SOIC

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Specifications

Attribute Value
Package Tape & Reel (TR),Cut Tape (CT)
Series HEXFET®
ProductStatus Active
FETType N and P-Channel
FETFeature Logic Level Gate
DraintoSourceVoltage(Vdss) 30V
RdsOn(Max)@IdVgs 29mOhm @ 5.8A, 10V
Vgs(th)(Max)@Id 1V @ 250µA
GateCharge(Qg)(Max)@Vgs 33nC @ 10V
InputCapacitance(Ciss)(Max)@Vds 650pF @ 25V
Power-Max 2.5W
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case 8-SOIC (0.154, 3.90mm Width)

Overview

Equivalent

Equivalent products to the IRF7389TRPBF (Dual N-Channel MOSFET) include:
- IRF7309TRPBF (Similar specs, lower current rating)
- IRF7319TRPBF (Higher current, similar voltage)
- Si7336ADP-T1-GE3 (Vishay alternative)
- FDS6898A (Fairchild alternative)
- DMN2019LSD-7 (Diodes Inc. alternative)
Check datasheets for exact compatibility in your circuit.

Features

The IRF7389TRPBF is a dual N-channel MOSFET in a compact SO-8 package, designed for high-efficiency power applications. Key features:
- Voltage Rating: 30V (drain-to-source, VDS).
- Current Handling: 6.3A continuous (ID) per channel.
- Low On-Resistance: 50mΩ (max) at VGS = 10V, reducing conduction losses.
- Fast Switching: Optimized for high-speed applications (low Qg, Qgd).
- Logic-Level Gate Drive: Threshold voltage (VGS(th)) as low as 1V, compatible with 3.3V/5V logic.
- Dual MOSFET: Two independent N-channel FETs in one package, saving board space.
- AEC-Q101 Qualified: Suitable for automotive applications.
- Low Power Loss: Efficient thermal performance with low RDS(on).
Ideal for DC-DC converters, motor control, and load switching in automotive/industrial systems.

Pinout

The IRF7389TRPBF is a dual N-channel MOSFET in a Power SO-8 (8-pin) package.
Pin Functions:
1. Pin 1 (G1): Gate of MOSFET 1
2. Pin 2 (S1): Source of MOSFET 1
3. Pin 3 (D1): Drain of MOSFET 1
4. Pin 4 (D2): Drain of MOSFET 2
5. Pin 5 (S2): Source of MOSFET 2
6. Pin 6 (G2): Gate of MOSFET 2
7. Pin 7 (NC): No Connection
8. Pin 8 (NC): No Connection
Key Features:
- VDS: 30V
- ID: 10A per MOSFET
- Low on-resistance (RDS(on)).
Commonly used in power management, motor control, and DC-DC converters.

Application

The IRF7389TRPBF, a dual N-channel MOSFET, is commonly used in:
1. Power Management – DC-DC converters, voltage regulators.
2. Motor Control – H-bridge circuits for brushed motors.
3. Switching Circuits – High-efficiency load switching in power supplies.
4. Automotive Systems – Electronic control units (ECUs), lighting.
5. Industrial Applications – Inverters, solenoids, and relays.
Its low on-resistance and high current handling make it suitable for high-efficiency, compact designs.

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