IRF7493TRPBF

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IRF7493TRPBF

+BOM

MOSFET N-CH 80V 9.3A 8SO

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Specifications

Attribute Value
Package / Case Tape & Reel (TR),Cut Tape (CT)
Series HEXFET®
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain(Id) @ 25°C 9.3A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 15mOhm @ 5.6A, 10V
Vgs(th)(Max) @ Id 4V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 53 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 1510 pF @ 25 V
Power Dissipation (Max) 2.5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SO

Overview

Description

The IRF7493TRPBF is a P-channel Power MOSFET from Infineon Technologies, designed for high-efficiency power management applications. Key features include:
- Voltage Rating: -30V (Drain-to-Source, VDS)
- Current Rating: -13A (Continuous Drain Current, ID)
- Low On-Resistance: 19mΩ (RDS(on)) at VGS = -10V
- Fast Switching: Optimized for high-speed performance
- Package: D2PAK (TO-263) for efficient thermal dissipation
Common applications include DC-DC converters, motor control, load switching, and battery management systems. Its P-channel configuration simplifies circuit design by reducing the need for charge pumps in high-side switching.
The TRPBF suffix indicates it is lead-free and RoHS-compliant, making it suitable for environmentally conscious designs.
For detailed specs, refer to the datasheet from Infineon.

Equivalent

Equivalent products to the IRF7493TRPBF (30V, 6.8A Dual N-Channel MOSFET) include:
- SiA436DJ-T1-GE3 (Vishay)
- DMN3010LSD-13 (Diodes Inc.)
- BSC032N03LSG (Infineon)
- FDS6898A (ON Semiconductor)
These alternatives offer similar specifications (dual N-channel, 30V, ~6-10A). Always verify pin compatibility and electrical characteristics for your application. For exact replacements, check distributors like Digi-Key or Mouser.

Features

The IRF7493TRPBF is a P-channel Power MOSFET with the following key features:
- Voltage Rating: -30V (Drain-to-Source, VDS)
- Current Rating: -5.8A (Continuous Drain Current, ID)
- Low On-Resistance: 85mΩ (max) @ VGS = -10V
- Fast Switching: Low gate charge (Qg ~ 8.3nC)
- Low Threshold Voltage (VGS(th)): -1V to -2V
- Power Dissipation: 2.5W (TA = 25°C)
- Package: SOIC-8 (Surface Mount)
- Logic-Level Compatible (Enhanced switching performance at -4.5V gate drive)
Ideal for power management, load switching, and DC-DC conversion in compact designs.

Application

The IRF7493TRPBF, a dual N-channel MOSFET, is commonly used in:
1. Power Management – DC-DC converters, voltage regulation.
2. Motor Control – H-bridge circuits, brushed motor drives.
3. Load Switching – High-efficiency power switching in portable devices.
4. Automotive Systems – Electronic control units (ECUs), LED drivers.
5. Industrial Applications – Relay replacements, solenoid drivers.
Its low on-resistance (RDS(on)) and compact package make it suitable for space-constrained, high-efficiency designs.

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