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IRF7606TRPBF
+BOMMOSFET P-CH 30V 3.6A MICRO8
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ManufacturerInfineon Technologies
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Mfr. Part #IRF7606TRPBF
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Datasheet IRF7606TRPBF DataSheet
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In Stock1633
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Specifications
| Attribute | Value |
| Series | HEXFET® |
| PartStatus | Obsolete |
| BaseProductNumber | IRF7606 |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 30 V |
| Current-ContinuousDrain(Id)@25°C | 3.6A (Ta) |
| DriveVoltage(MaxRdsOn,MinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@Id,Vgs | 90mOhm @ 2.4A, 10V |
| Vgs(th)(Max)@Id | 1V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 30 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 520 pF @ 25 V |
| PowerDissipation(Max) | 1.8W (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | Micro8™ |
| Package | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
| Packaging | Cut Tape (CT), Tape & Reel (TR) |
Overview
Description
The IRF7606TRPBF is a power MOSFET designed by International Rectifier, now part of Infineon Technologies. It is specifically utilized in applications requiring efficient power management, switching capabilities, and high-speed performance. This device features a low on-resistance, which enhances its efficiency and reduces power loss during operation. It is typically packaged in a surface-mount form factor, making it suitable for compact electronic designs.
The IRF7606TRPBF operates with a maximum drain-source voltage (Vds) and continuous drain current that are suitable for various power electronics applications. It is commonly used in DC-DC converters, motor controllers, and other power supply circuits. The device is also known for its robustness, including high temperature and voltage tolerance, which ensures reliability in demanding environments.
Additionally, this MOSFET comes in a RoHS-compliant package, making it environmentally friendly. Its design and performance cater to applications that require efficient switching and power handling with minimal energy loss.
The IRF7606TRPBF operates with a maximum drain-source voltage (Vds) and continuous drain current that are suitable for various power electronics applications. It is commonly used in DC-DC converters, motor controllers, and other power supply circuits. The device is also known for its robustness, including high temperature and voltage tolerance, which ensures reliability in demanding environments.
Additionally, this MOSFET comes in a RoHS-compliant package, making it environmentally friendly. Its design and performance cater to applications that require efficient switching and power handling with minimal energy loss.
Equivalent
The IRF7606TRPBF is an N-channel MOSFET. Equivalent products include:
1. NTD12N10
2. FQP12N10
3. STP12NM50N
4. SPB17N80C3
5. BUK954R8-60E
Ensure compatibility by checking the specific voltage, current ratings, and other parameters. Always refer to the datasheets for detailed comparisons.
1. NTD12N10
2. FQP12N10
3. STP12NM50N
4. SPB17N80C3
5. BUK954R8-60E
Ensure compatibility by checking the specific voltage, current ratings, and other parameters. Always refer to the datasheets for detailed comparisons.
Features
The IRF7606TRPBF is a dual N-channel MOSFET designed for efficient power management applications. Key features include:
1. Voltage Rating: It has a drain-to-source voltage (V_ds) rating of 20V.
2. Continuous Drain Current: The device can handle a continuous drain current of 5.8A at 25°C.
3. R_DS(on): The on-resistance is low, typically around 0.022 ohms, which helps reduce power loss and improve efficiency.
4. Package: It comes in a compact SO-8 package, making it suitable for space-constrained applications.
5. Drive Voltage: The MOSFET can be driven with a gate-source voltage as low as 4.5V, which is compatible with low-voltage logic levels.
6. Thermal Performance: It offers good thermal performance, with a junction-to-ambient thermal resistance of 62°C/W.
7. Applications: Commonly used in DC-DC converters, load switches, and power management systems.
These features make the IRF7606TRPBF an excellent choice for efficient and compact power management solutions.
1. Voltage Rating: It has a drain-to-source voltage (V_ds) rating of 20V.
2. Continuous Drain Current: The device can handle a continuous drain current of 5.8A at 25°C.
3. R_DS(on): The on-resistance is low, typically around 0.022 ohms, which helps reduce power loss and improve efficiency.
4. Package: It comes in a compact SO-8 package, making it suitable for space-constrained applications.
5. Drive Voltage: The MOSFET can be driven with a gate-source voltage as low as 4.5V, which is compatible with low-voltage logic levels.
6. Thermal Performance: It offers good thermal performance, with a junction-to-ambient thermal resistance of 62°C/W.
7. Applications: Commonly used in DC-DC converters, load switches, and power management systems.
These features make the IRF7606TRPBF an excellent choice for efficient and compact power management solutions.
Pinout
The IRF7606TRPBF is a dual N-channel MOSFET housed in an SO-8 package. This part features two MOSFETs within a single package, catering to applications requiring efficient space management. The device generally operates in power management applications, including DC-DC converters, load switches, and motor drives.
The SO-8 package comprises 8 pins. Each MOSFET within this dual configuration includes three terminals: Gate (G), Drain (D), and Source (S). The typical pin configuration is as follows for each MOSFET:
- Pin 1: Source 1
- Pin 2: Gate 1
- Pin 3: Source 2
- Pin 4: Gate 2
- Pin 5, 6: Drain 2
- Pin 7, 8: Drain 1
Pins 5 and 6 are internally connected to Drain 2, and pins 7 and 8 are connected to Drain 1 to allow for better current handling capability. The IRF7606TRPBF is used for switching applications due to its efficiency and compact design, providing high-speed switching with low on-resistance.
The SO-8 package comprises 8 pins. Each MOSFET within this dual configuration includes three terminals: Gate (G), Drain (D), and Source (S). The typical pin configuration is as follows for each MOSFET:
- Pin 1: Source 1
- Pin 2: Gate 1
- Pin 3: Source 2
- Pin 4: Gate 2
- Pin 5, 6: Drain 2
- Pin 7, 8: Drain 1
Pins 5 and 6 are internally connected to Drain 2, and pins 7 and 8 are connected to Drain 1 to allow for better current handling capability. The IRF7606TRPBF is used for switching applications due to its efficiency and compact design, providing high-speed switching with low on-resistance.
Manufacturer
The IRF7606TRPBF is manufactured by Infineon Technologies. Infineon is a German semiconductor manufacturer known for providing a wide range of semiconductor solutions. The company focuses on automotive, industrial power control, power management, and digital security markets. Infineon is recognized for its innovations in the semiconductor industry, producing components that are integral to modern electronics, such as microcontrollers, power semiconductors, and sensors.
Application
The IRF7606TRPBF is a HEXFET power MOSFET commonly used in applications requiring efficient power management and control. Its application areas include:
1. DC-DC Converters: Essential in power conversion systems for improving efficiency.
2. Motor Drives: Facilitates efficient motor control in automotive and industrial applications.
3. Switching Power Supplies: Used for high-frequency switching to enhance power supply performance.
4. Load Switches: Offers reliable performance in switching applications for managing power distribution.
5. Inverters: Key component in inverters for renewable energy systems like solar inverters.
6. Battery Management Systems: Ensures effective charging and discharging processes.
These applications benefit from the MOSFET's low on-resistance and fast switching capabilities.
1. DC-DC Converters: Essential in power conversion systems for improving efficiency.
2. Motor Drives: Facilitates efficient motor control in automotive and industrial applications.
3. Switching Power Supplies: Used for high-frequency switching to enhance power supply performance.
4. Load Switches: Offers reliable performance in switching applications for managing power distribution.
5. Inverters: Key component in inverters for renewable energy systems like solar inverters.
6. Battery Management Systems: Ensures effective charging and discharging processes.
These applications benefit from the MOSFET's low on-resistance and fast switching capabilities.
Package
The IRF7606TRPBF is typically supplied in a surface-mount package known as DirectFET. This package is designed for improved thermal performance and efficiency, making it suitable for high-frequency and high-power applications.
