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IRF8313TRPBF
+BOMIRF8313 - HEXFET POWER MOSFET
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ManufacturerInternational Rectifier
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Mfr. Part #IRF8313TRPBF
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Datasheet IRF8313TRPBF DataSheet
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Package SOIC-8
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In Stock5889
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Specifications
| Attribute | Value |
| Package | Bulk |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | 2 N-Channel (Dual) |
| FETFeature | Logic Level Gate |
| DraintoSourceVoltage(Vdss) | 30V |
| Current-ContinuousDrain(Id)@25°C | 9.7A |
| RdsOn(Max)@IdVgs | 15.5mOhm @ 9.7A, 10V |
| Vgs(th)(Max)@Id | 2.35V @ 25µA |
| GateCharge(Qg)(Max)@Vgs | 9nC @ 4.5V |
| InputCapacitance(Ciss)(Max)@Vds | 760pF @ 15V |
| Power-Max | 2W |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 8-SOIC (0.154, 3.90mm Width) |
Overview
Description
The device is packaged in a TO-220, ensuring efficient heat dissipation and ease of mounting. It is commonly used in applications such as DC-DC converters, motor drives, and power management systems. Additionally, the IRF8313TRPBF is lead-free and complies with RoHS standards, making it an environmentally friendly component.
With a total gate charge optimized for fast switching, the IRF8313TRPBF enhances the overall efficiency of power conversion systems by minimizing switching losses and thermal management requirements. It is a reliable choice for engineers looking to design energy-efficient electronic systems.
Equivalent
1. STP80NF70 - by STMicroelectronics
2. FDPF80N10 - by ON Semiconductor
3. IPP80N10S3L-04 - by Infineon Technologies
4. NTB80N10 - by ON Semiconductor
Please verify specifications such as voltage, current ratings, and package type to ensure compatibility.
Features
1. N-Channel MOSFET: It utilizes an N-channel configuration, ideal for high-speed switching.
2. Low On-Resistance: Exhibits a low R_DS(on) value, which ensures efficient operation by minimizing power loss during conduction.
3. High Current Capability: Capable of handling high current loads, making it suitable for demanding applications.
4. Fast Switching: Offers rapid switching speeds, enhancing performance in high-frequency applications.
5. Low Gate Charge: Features a low gate charge, which reduces the power required to drive the device, improving overall efficiency.
6. Surface Mount Package: Available in a compact D2PAK (TO-263) surface mount package, facilitating easy integration into circuit boards.
7. RoHS Compliant: Meets Restriction of Hazardous Substances (RoHS) standards, ensuring it is environmentally friendly.
8. Reliable Performance: Designed for durability and reliability, suitable for applications such as power management, motor control, and DC-DC converters.
These features make the IRF8313TRPBF a versatile choice for various power supply and switching applications.
Pinout
The IRF8313TRPBF typically comes in a standard package such as the D2PAK (TO-263), which is designed for surface mounting. In this package, the MOSFET generally has three primary pins:
1. Gate (G): This pin is used to control the MOSFET. Applying voltage here turns the MOSFET on or off.
2. Drain (D): The output pin through which the load current flows when the MOSFET is on.
3. Source (S): The pin that is normally connected to ground; it serves as the return path for the load current.
Additionally, there might be a metal tab that is electrically connected to the drain for heat dissipation purposes, but it typically does not serve as an electrical connection point in circuit designs.
Manufacturer
Application
1. Power Management: Used in DC-DC converters and voltage regulators for efficient power distribution.
2. Motor Control: Suitable for driving motors in automotive and industrial applications.
3. Switching Applications: Used in high-speed switching circuits for inverters and power supplies.
4. Renewable Energy Systems: Applicable in solar inverters and other renewable energy systems for efficient energy conversion.
5. Consumer Electronics: Employed in power supply units of electronic devices for better energy efficiency.
Its low on-resistance and fast switching capabilities make it ideal for these demanding applications.