Specifications
| Attribute | Value |
| Package | Tube |
| Series | HEXFET® |
| ProductStatus | Obsolete |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 500 V |
| Current-ContinuousDrain(Id)@25°C | 8A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 850mOhm @ 4.8A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 63 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 1300 pF @ 25 V |
| PowerDissipation(Max) | 125W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220AB |
Overview
Description
The IRF840PBF is an N-channel power MOSFET designed for high-speed switching applications. It is commonly used in power management, motor control, and various other electronic applications requiring efficient power delivery. This MOSFET features a voltage rating of 500V and a continuous current rating of 8A, making it suitable for handling substantial power loads.
The "PBF" in its designation indicates that it is lead-free and RoHS compliant, aligning with environmental and safety standards. The IRF840PBF exhibits low on-resistance, enhancing its efficiency by minimizing power loss during operation. It comes in a TO-220 package, which aids in heat dissipation, essential for maintaining performance stability under high power conditions.
Key characteristics include a fast switching speed and a robust design, which supports high-frequency operations. Its applications range from consumer electronics to industrial systems, where efficient and reliable power control is critical. Overall, the IRF840PBF is valued for its combination of high voltage and current capabilities, efficiency, and compliance with environmental standards.
The "PBF" in its designation indicates that it is lead-free and RoHS compliant, aligning with environmental and safety standards. The IRF840PBF exhibits low on-resistance, enhancing its efficiency by minimizing power loss during operation. It comes in a TO-220 package, which aids in heat dissipation, essential for maintaining performance stability under high power conditions.
Key characteristics include a fast switching speed and a robust design, which supports high-frequency operations. Its applications range from consumer electronics to industrial systems, where efficient and reliable power control is critical. Overall, the IRF840PBF is valued for its combination of high voltage and current capabilities, efficiency, and compliance with environmental standards.
Equivalent
The IRF840PBF is an N-channel MOSFET. Equivalent products include:
1. IRF840
2. IRFP240
3. STP16NF06
4. PHEMT4N60E
5. FQP8N60C
These alternatives offer similar voltage and current ratings, making them suitable substitutes for applications involving power switching. However, always verify the specific parameters and performance characteristics to ensure compatibility with your application.
1. IRF840
2. IRFP240
3. STP16NF06
4. PHEMT4N60E
5. FQP8N60C
These alternatives offer similar voltage and current ratings, making them suitable substitutes for applications involving power switching. However, always verify the specific parameters and performance characteristics to ensure compatibility with your application.
Features
The IRF840PBF is an N-channel Power MOSFET that is designed for high-speed switching applications. Key features include:
1. Voltage Rating: It supports a maximum drain-source voltage (V_DS) of 500V, making it suitable for high-voltage applications.
2. Current Rating: The continuous drain current (I_D) is 8A, allowing it to handle moderate power loads.
3. R_DS(on): The on-resistance is relatively low, typically around 0.85 ohms, which helps minimize power loss and improve efficiency.
4. Fast Switching: It offers rapid switching capabilities, which is ideal for applications requiring high-frequency operation.
5. Thermal Performance: The device has a maximum power dissipation of 125W, supported by a TO-220 package that provides effective heat dissipation.
6. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) ranges from 2V to 4V, ensuring stable operation.
7. Enhanced Ruggedness: The MOSFET is designed with high avalanche energy and dv/dt capability, which contributes to its robustness and reliability.
These features make the IRF840PBF suitable for use in power supply, motor control, and other switching applications.
1. Voltage Rating: It supports a maximum drain-source voltage (V_DS) of 500V, making it suitable for high-voltage applications.
2. Current Rating: The continuous drain current (I_D) is 8A, allowing it to handle moderate power loads.
3. R_DS(on): The on-resistance is relatively low, typically around 0.85 ohms, which helps minimize power loss and improve efficiency.
4. Fast Switching: It offers rapid switching capabilities, which is ideal for applications requiring high-frequency operation.
5. Thermal Performance: The device has a maximum power dissipation of 125W, supported by a TO-220 package that provides effective heat dissipation.
6. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) ranges from 2V to 4V, ensuring stable operation.
7. Enhanced Ruggedness: The MOSFET is designed with high avalanche energy and dv/dt capability, which contributes to its robustness and reliability.
These features make the IRF840PBF suitable for use in power supply, motor control, and other switching applications.
Pinout
The IRF840PBF is an N-channel power MOSFET. It has a standard TO-220 package which includes 3 pins. The pin configuration is as follows:
1. Gate (G): This is the control terminal that modulates the conductivity between the drain and source terminals.
2. Drain (D): The drain terminal is where the current flows out of the MOSFET.
3. Source (S): This is the terminal where the current enters the MOSFET.
The primary function of the IRF840PBF is to act as a switch or amplifier in electronic circuits. It supports high voltage applications with a maximum drain-source voltage (Vds) of about 500V and a continuous drain current (Id) of up to 8A, making it suitable for various power applications. Its low on-resistance enhances efficiency, reducing power loss in the system. The device is widely used in switching power supplies, motor controllers, and other applications requiring efficient high-speed switching.
1. Gate (G): This is the control terminal that modulates the conductivity between the drain and source terminals.
2. Drain (D): The drain terminal is where the current flows out of the MOSFET.
3. Source (S): This is the terminal where the current enters the MOSFET.
The primary function of the IRF840PBF is to act as a switch or amplifier in electronic circuits. It supports high voltage applications with a maximum drain-source voltage (Vds) of about 500V and a continuous drain current (Id) of up to 8A, making it suitable for various power applications. Its low on-resistance enhances efficiency, reducing power loss in the system. The device is widely used in switching power supplies, motor controllers, and other applications requiring efficient high-speed switching.
Manufacturer
The IRF840PBF is a power MOSFET manufactured by Infineon Technologies. Infineon is a leading global semiconductor company that develops and produces a wide range of semiconductor solutions, including power semiconductors, microcontrollers, sensors, and systems for automotive, industrial, and consumer electronics applications. The company focuses on providing energy-efficient, reliable, and advanced technology solutions to address various challenges in power management, mobility, and connectivity.
Application
The IRF840PBF is a power MOSFET suited for various applications due to its high voltage and current handling capabilities. Key application areas include:
1. Switching Power Supplies: Used for efficient energy conversion in power supply units.
2. Motor Drives: Controls and drives motors in industrial and consumer applications.
3. Lighting: Suitable for controlling high-intensity discharge lamps and LED drivers.
4. Inverters: Used in inverters for solar panels and other renewable energy systems.
5. Audio Amplifiers: Provides amplification in high-power audio systems.
6. Uninterruptible Power Supplies (UPS): Ensures continuous power supply during outages.
Its robustness and reliability make it ideal for high-efficiency power management solutions.
1. Switching Power Supplies: Used for efficient energy conversion in power supply units.
2. Motor Drives: Controls and drives motors in industrial and consumer applications.
3. Lighting: Suitable for controlling high-intensity discharge lamps and LED drivers.
4. Inverters: Used in inverters for solar panels and other renewable energy systems.
5. Audio Amplifiers: Provides amplification in high-power audio systems.
6. Uninterruptible Power Supplies (UPS): Ensures continuous power supply during outages.
Its robustness and reliability make it ideal for high-efficiency power management solutions.
Package
The IRF840PBF is typically available in a TO-220 package. This package type is commonly used for power transistors and features three leads, providing efficient heat dissipation due to the metal back.
