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IRF9358PBF
+BOMMOSFET 2P-CH 30V 9.2A 8SO
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ManufacturerInfineon Technologies
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Mfr. Part #IRF9358PBF
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Datasheet IRF9358PBF DataSheet
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In Stock9483
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Specifications
| Attribute | Value |
| Series | HEXFET® |
| PartStatus | Discontinued at Digi-Key |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 P-Channel (Dual) |
| FETFeature | Logic Level Gate |
| DraintoSourceVoltage(Vdss) | 30V |
| Current-ContinuousDrain(Id)@25°C | 9.2A |
| RdsOn(Max)@Id,Vgs | 16.3mOhm @ 9.2A, 10V |
| Vgs(th)(Max)@Id | 2.4V @ 25µA |
| GateCharge(Qg)(Max)@Vgs | 38nC @ 10V |
| InputCapacitance(Ciss)(Max)@Vds | 1740pF @ 25V |
| Power-Max | 2W |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 8-SOIC (0.154", 3.90mm Width) |
| SupplierDevicePackage | 8-SO |
| BaseProductNumber | IRF9358 |
Overview
Description
The IRF9358PBF is a N-channel MOSFET designed for high-efficiency switching applications. It features a low on-resistance (R_DS(on)), allowing for minimal power loss and improved thermal performance. With a maximum drain-source voltage (V_DS) of 30V and a continuous drain current (I_D) of 50A, it is suitable for various power management applications, including DC-DC converters and motor control.
Key specifications include a gate threshold voltage (V_GS(th)) of 1V to 2V, which enables low-voltage operations, and a fast switching speed that enhances efficiency in high-frequency applications. Its robust package options, such as TO-220 and DPAK, ensure effective heat dissipation.
The IRF9358PBF is often utilized in consumer electronics, automotive systems, and renewable energy solutions, making it a versatile component in power electronics design. Additionally, its Pb-free package indicates compliance with environmental regulations. Overall, the IRF9358PBF is a reliable choice for engineers seeking efficient and compact power management solutions.
Key specifications include a gate threshold voltage (V_GS(th)) of 1V to 2V, which enables low-voltage operations, and a fast switching speed that enhances efficiency in high-frequency applications. Its robust package options, such as TO-220 and DPAK, ensure effective heat dissipation.
The IRF9358PBF is often utilized in consumer electronics, automotive systems, and renewable energy solutions, making it a versatile component in power electronics design. Additionally, its Pb-free package indicates compliance with environmental regulations. Overall, the IRF9358PBF is a reliable choice for engineers seeking efficient and compact power management solutions.
Equivalent
The IRF9358PBF is a N-channel MOSFET. Equivalent products include the AO3400, BSS138, and IRLZ44N Ensure to check specifications like voltage, current ratings, and threshold voltages for compatibility in your specific application. Always refer to datasheets for precise comparisons.
Features
The IRF9358PBF is an N-channel MOSFET designed for high-speed switching applications. Key features include:
1. Voltage Rating: Maximum drain-source voltage (V_DS) of 30V, making it suitable for low-voltage applications.
2. Current Rating: Continuous drain current (I_D) of 62A at a temperature of 25°C, allowing for robust performance in demanding environments.
3. R_DS(on): Low on-resistance of 0.014 ohms, which minimizes power losses and heat generation during operation.
4. Gate Threshold Voltage (V_GS(th)): Ranges from 1V to 2.5V, enabling efficient operation with low gate drive voltages.
5. Package Type: Available in TO-220 and DPAK packages for easy integration into various circuits.
6. Thermal Resistance: Low thermal resistance, enhancing heat dissipation capabilities.
7. Fast Switching: Suitable for applications requiring rapid switching, such as in power converters and motor drivers.
These features make the IRF9358PBF ideal for power management and control in various electronic applications.
1. Voltage Rating: Maximum drain-source voltage (V_DS) of 30V, making it suitable for low-voltage applications.
2. Current Rating: Continuous drain current (I_D) of 62A at a temperature of 25°C, allowing for robust performance in demanding environments.
3. R_DS(on): Low on-resistance of 0.014 ohms, which minimizes power losses and heat generation during operation.
4. Gate Threshold Voltage (V_GS(th)): Ranges from 1V to 2.5V, enabling efficient operation with low gate drive voltages.
5. Package Type: Available in TO-220 and DPAK packages for easy integration into various circuits.
6. Thermal Resistance: Low thermal resistance, enhancing heat dissipation capabilities.
7. Fast Switching: Suitable for applications requiring rapid switching, such as in power converters and motor drivers.
These features make the IRF9358PBF ideal for power management and control in various electronic applications.
Pinout
The IRF9358PBF is a dual N-channel MOSFET in a 8-pin SOIC package. It features two independent MOSFETs, allowing for efficient switching applications. The pin count is 8, and the pins are typically configured as follows:
1. Gate 1 - Control input for the first N-channel MOSFET.
2. Drain 1 - Output for the first MOSFET.
3. Source 1 - Source terminal for the first MOSFET.
4. Gate 2 - Control input for the second N-channel MOSFET.
5. Drain 2 - Output for the second MOSFET.
6. Source 2 - Source terminal for the second MOSFET.
7. Drain 1 (Common) - Shared drain connection for both transistors.
8. Source 1 (Common) - Shared source connection for both transistors.
The IRF9358PBF is commonly used in power management, motor control, and other high-efficiency applications.
1. Gate 1 - Control input for the first N-channel MOSFET.
2. Drain 1 - Output for the first MOSFET.
3. Source 1 - Source terminal for the first MOSFET.
4. Gate 2 - Control input for the second N-channel MOSFET.
5. Drain 2 - Output for the second MOSFET.
6. Source 2 - Source terminal for the second MOSFET.
7. Drain 1 (Common) - Shared drain connection for both transistors.
8. Source 1 (Common) - Shared source connection for both transistors.
The IRF9358PBF is commonly used in power management, motor control, and other high-efficiency applications.
Manufacturer
The IRF9358PBF is manufactured by Infineon Technologies AG, a global semiconductor manufacturer based in Germany. Infineon specializes in a wide range of semiconductor solutions, including power management, automotive, industrial, and security applications. The company is known for its expertise in power semiconductors, particularly MOSFETs like the IRF9358PBF, which is an N-channel MOSFET designed for efficient power switching in various applications. Infineon serves a diverse array of industries, including automotive, industrial, and consumer electronics, and is recognized for its innovation and commitment to quality in semiconductor technology.
Application
The IRF9358PBF is an N-channel MOSFET designed for various applications, including power management, switching power supplies, and motor control. Its features enable use in high-efficiency DC-DC converters, where it can handle high currents and voltage levels. Additionally, it is suitable for driving loads in automotive applications, LED lighting, and audio amplifiers. The device's fast switching speed and low on-resistance make it ideal for applications requiring high efficiency and thermal performance.
Package
The IRF9358PBF is packaged in a TO-220 format. This package type is designed for efficient heat dissipation and easy mounting on heat sinks, making it suitable for power applications in electronics.
