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IRF9388TRPBF
+BOMMOSFET P-CH 30V 12A 8SO
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ManufacturerInfineon Technologies
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Mfr. Part #IRF9388TRPBF
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Datasheet IRF9388TRPBF DataSheet
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Package SO-8
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In Stock1405
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Specifications
| Attribute | Value |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | HEXFET® |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain(Id) @ 25°C | 12A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 10V, 20V |
| Rds On(Max) @ Id Vgs | 8.5mOhm @ 12A, 20V |
| Vgs(th)(Max) @ Id | 2.4V @ 25µA |
| Gate Charge(Qg)(Max) @ Vgs | 52 nC @ 10 V |
| Vgs(Max) | ±25V |
| Input Capacitance(Ciss)(Max) @ Vds | 1680 pF @ 25 V |
| Power Dissipation (Max) | 2.5W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SO |
Overview
Description
With a maximum drain current of approximately 6.8A and a drain-source voltage of -30V, the IRF9388TRPBF is suitable for medium-power applications. It comes in a surface-mount, D-Pak (TO-252) package, which facilitates efficient thermal performance and compact design integration.
The MOSFET has a low gate charge, which reduces the power required for switching and enhances overall system efficiency. It also provides robust performance over a wide temperature range, making it reliable in various operating conditions. The IRF9388TRPBF is often used in applications where space, efficiency, and performance are critical.
Equivalent
1. Vishay SI4888EY
2. Infineon BSC050NE2LSI
3. ON Semiconductor NTP6414ANG
4. NXP PSMN5R5-100BSE
Always verify the specific parameters and pin configurations to ensure compatibility in your circuit application.
Features
1. N-Channel MOSFET: It features an N-channel configuration, ideal for various switching applications.
2. Voltage and Current Ratings: The MOSFET can handle a drain-to-source voltage (VDS) of up to 30V and a continuous drain current (ID) of up to 60A.
3. Low On-Resistance: It offers a low RDS(on) of approximately 6.5 mΩ, enhancing efficiency by minimizing power loss in the conduction state.
4. Fast Switching: The device is designed for high-speed switching, which can improve overall system performance and efficiency.
5. Surface Mount Package: Available in a TO-252 (D-Pak) package, suitable for automated assembly and compact PCB designs.
6. RoHS Compliant: The component is free of lead and compliant with RoHS standards, making it environmentally friendly.
7. Applications: Commonly used in DC-DC converters, motor drivers, and other power management applications.
These features make the IRF9388TRPBF suitable for various demanding electronic applications requiring efficient power management.
Pinout
1. Source (S): Multiple pins are usually provided for the source to handle high current; often 3 or 4 pins.
2. Gate (G): The gate pin controls the MOSFET's operation.
3. Drain (D): Typically, there are multiple drain pins to support higher current flow.
In terms of its function, the IRF9388TRPBF is used for switching and amplifying electronic signals in a variety of applications, including power management, motor control, and DC-DC converters. Its low on-resistance and high current capacity make it suitable for these tasks. The MOSFET can handle significant power levels while maintaining efficient operation and heat dissipation, owing to its PowerPAK package design.