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IRF9530NS
+BOMMOSFET P-CH 100V 14A D2PAK
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ManufacturerInfineon Technologies
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Mfr. Part #IRF9530NS
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Datasheet IRF9530NS DataSheet
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Package TO-263
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In Stock5563
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Specifications
| Attribute | Value |
| Package | Tube |
| Series | HEXFET® |
| ProductStatus | Obsolete |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 100 V |
| Current-ContinuousDrain(Id)@25°C | 14A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 200mOhm @ 8.4A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 58 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 760 pF @ 25 V |
| PowerDissipation(Max) | 3.8W (Ta), 79W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | D2PAK |
Overview
Description
The IRF9530NS is a P-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for efficient power management and switching applications. It is commonly used in low-voltage, high-current environments and is known for its robustness and reliability. The MOSFET features a low on-resistance, which minimizes power loss and improves efficiency, making it suitable for applications such as DC-DC converters, motor controllers, and load switches.
Key specifications include a maximum drain-source voltage (V_DS) of -100V and a continuous drain current (I_D) of up to -18A. The device operates efficiently due to its fast switching speed and low gate charge. The IRF9530NS is typically housed in a TO-263 package, which offers enhanced thermal performance, making it suitable for use in compact and thermally challenging environments.
Overall, the IRF9530NS is valued for its high performance in power electronics applications where efficient switching and low power dissipation are critical.
Key specifications include a maximum drain-source voltage (V_DS) of -100V and a continuous drain current (I_D) of up to -18A. The device operates efficiently due to its fast switching speed and low gate charge. The IRF9530NS is typically housed in a TO-263 package, which offers enhanced thermal performance, making it suitable for use in compact and thermally challenging environments.
Overall, the IRF9530NS is valued for its high performance in power electronics applications where efficient switching and low power dissipation are critical.
Equivalent
The IRF9530NS is a P-channel MOSFET. Equivalent products include:
1. FQP27P06 by ON Semiconductor
2. STP55P06 by STMicroelectronics
3. FDP6670AL by ON Semiconductor
4. NDP6020P by ON Semiconductor
These equivalents have similar voltage and current ratings, but always check the datasheets for detailed specs and compatibility with your application.
1. FQP27P06 by ON Semiconductor
2. STP55P06 by STMicroelectronics
3. FDP6670AL by ON Semiconductor
4. NDP6020P by ON Semiconductor
These equivalents have similar voltage and current ratings, but always check the datasheets for detailed specs and compatibility with your application.
Features
The IRF9530NS is a P-channel power MOSFET designed for high-speed switching applications. Key features include:
1. Type: P-channel MOSFET.
2. VDSS: Maximum drain-source voltage of -100V.
3. ID: Continuous drain current of -19A at 25°C.
4. RDS(on): Low on-resistance of 0.2 ohms, enhancing efficiency.
5. Qg: Total gate charge of 39nC for fast switching.
6. Package: Available in a TO-263 (D2Pak) surface-mount package, offering good thermal performance.
7. Temperature Range: Operates effectively from -55°C to +175°C.
8. Applications: Ideal for power management, DC-DC converters, and load switch applications.
9. Performance: Built to handle high energy in avalanche and commutation modes.
These features make the IRF9530NS suitable for applications requiring efficient and reliable power management in compact, high-density electronic devices.
1. Type: P-channel MOSFET.
2. VDSS: Maximum drain-source voltage of -100V.
3. ID: Continuous drain current of -19A at 25°C.
4. RDS(on): Low on-resistance of 0.2 ohms, enhancing efficiency.
5. Qg: Total gate charge of 39nC for fast switching.
6. Package: Available in a TO-263 (D2Pak) surface-mount package, offering good thermal performance.
7. Temperature Range: Operates effectively from -55°C to +175°C.
8. Applications: Ideal for power management, DC-DC converters, and load switch applications.
9. Performance: Built to handle high energy in avalanche and commutation modes.
These features make the IRF9530NS suitable for applications requiring efficient and reliable power management in compact, high-density electronic devices.
Pinout
The IRF9530NS is a P-channel MOSFET. It typically comes in a D^2PAK (TO-263) package and has three pins plus a tab, which is often considered a fourth connection for electrical and thermal purposes. Here is a brief description of each pin:
1. Gate (G): This pin receives the voltage that controls the MOSFET's operation. A voltage applied to the gate determines whether the MOSFET is on or off.
2. Drain (D): This is the main current-carrying terminal when the MOSFET is conducting. In a P-channel MOSFET, current typically flows from the source to the drain.
3. Source (S): This terminal is connected to the source of the charge carriers (holes in the case of a P-channel device).
4. Tab: The tab is electrically connected to the drain and is used for heat dissipation, often attached to a heat sink.
The IRF9530NS is used in power switching applications, where it facilitates the control of high-voltage and high-current loads with minimal gate (input) power.
1. Gate (G): This pin receives the voltage that controls the MOSFET's operation. A voltage applied to the gate determines whether the MOSFET is on or off.
2. Drain (D): This is the main current-carrying terminal when the MOSFET is conducting. In a P-channel MOSFET, current typically flows from the source to the drain.
3. Source (S): This terminal is connected to the source of the charge carriers (holes in the case of a P-channel device).
4. Tab: The tab is electrically connected to the drain and is used for heat dissipation, often attached to a heat sink.
The IRF9530NS is used in power switching applications, where it facilitates the control of high-voltage and high-current loads with minimal gate (input) power.
Manufacturer
The IRF9530NS is a P-channel MOSFET originally manufactured by International Rectifier. International Rectifier was a company that specialized in power management technology, including power semiconductors, MOSFETs, IGBTs, and rectifiers. It catered to various industries by providing components used in power conversion, automotive applications, renewable energy, and other sectors requiring efficient power management.
In 2015, International Rectifier was acquired by Infineon Technologies, a leading German semiconductor manufacturer. Infineon Technologies continues to produce and support a wide range of semiconductor products, including those originally developed by International Rectifier. Infineon is known for its expertise in automotive, industrial power control, power management, and digital security solutions, making it a significant player in the global semiconductor industry.
In 2015, International Rectifier was acquired by Infineon Technologies, a leading German semiconductor manufacturer. Infineon Technologies continues to produce and support a wide range of semiconductor products, including those originally developed by International Rectifier. Infineon is known for its expertise in automotive, industrial power control, power management, and digital security solutions, making it a significant player in the global semiconductor industry.
Application
The IRF9530NS is a P-channel MOSFET commonly used in various applications due to its efficient switching and low on-state resistance. Key application areas include:
1. Power Management: Used in power converters and regulators for efficient energy distribution.
2. Switching Circuits: Ideal for high-speed switching in DC-DC converters and power supplies.
3. Motor Control: Utilized in driving motors and actuators, providing reliable performance.
4. Load Switching: Employed in managing high-current loads with minimal loss.
5. Inverter Circuits: Used in inverters for renewable energy systems.
6. Automotive Electronics: Suitable for automotive applications, including power control units.
Its versatility makes it a staple in industries requiring robust power control solutions.
1. Power Management: Used in power converters and regulators for efficient energy distribution.
2. Switching Circuits: Ideal for high-speed switching in DC-DC converters and power supplies.
3. Motor Control: Utilized in driving motors and actuators, providing reliable performance.
4. Load Switching: Employed in managing high-current loads with minimal loss.
5. Inverter Circuits: Used in inverters for renewable energy systems.
6. Automotive Electronics: Suitable for automotive applications, including power control units.
Its versatility makes it a staple in industries requiring robust power control solutions.
Package
The IRF9530NS is packaged in a TO-263 (D2PAK) surface-mount configuration. This package type is designed for high power applications and provides efficient thermal performance allowing the MOSFET to handle higher currents and power dissipation with appropriate heat sinking.
