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IRF9540NPBF
+BOMMOSFET P-CH 100V 23A TO220AB
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ManufacturerInfineon Technologies
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Mfr. Part #IRF9540NPBF
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Datasheet IRF9540NPBF DataSheet
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Package TO-220-3
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In Stock6653
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Specifications
| Attribute | Value |
| Package | Tube |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 100 V |
| Current-ContinuousDrain(Id)@25°C | 23A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 117mOhm @ 11A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 97 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 1300 pF @ 25 V |
| PowerDissipation(Max) | 140W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220AB |
Overview
Description
The MOSFET's low R_DS(on) of about 0.2 ohms minimizes power loss and heat generation, making it efficient for switching applications. Operating in the enhancement mode, the IRF9540NPBF is ideal for use in synchronous rectification, DC-DC converters, and motor control circuits.
Housed in a TO-220 package, the IRF9540NPBF provides excellent thermal performance and ease of mounting. It boasts a fast switching speed, high avalanche energy capability, and is RoHS compliant, ensuring it meets environmental and safety standards. With its robust design and versatility, this MOSFET is a popular choice for designers seeking performance and efficiency in power electronics.
Equivalent
1. FQP27P06 from ON Semiconductor
2. P27P06 from Fairchild Semiconductor
3. STP55PF06 from STMicroelectronics
4. FDP6035P from ON Semiconductor
Ensure that the specifications like voltage, current ratings, and package type match your application requirements when considering these equivalents.
Features
1. Voltage and Current Ratings: It supports a maximum drain-source voltage (V_DS) of -100V and a continuous drain current (I_D) of -19A at 25°C.
2. R_DS(on): The on-resistance is typically 0.117 ohms, providing efficient performance with low power loss.
3. Gate-Source Voltage: It operates with a gate-source voltage (V_GS) of ±20V.
4. Package Type: Comes in a TO-220 package, which is suitable for through-hole mounting and offers good thermal performance.
5. Maximum Power Dissipation: The device can dissipate up to 140W of power, ensuring it can handle high power applications.
6. Temperature Range: Functions efficiently within a junction temperature range of -55°C to 175°C, making it suitable for various environmental conditions.
7. Applications: It's commonly used in DC-DC converters, motor drivers, and power management in various electronic devices.
These features make the IRF9540NPBF a versatile choice for applications requiring reliable MOSFET performance with a negative voltage and high current handling capability.
Pinout
1. Gate (G) - This is the control terminal used to turn the MOSFET on or off. A voltage applied to the gate controls the flow of current between the source and drain.
2. Drain (D) - The drain is the terminal through which the main current flows from the source. In the case of a P-channel MOSFET, current flows from the source to the drain when the device is on.
3. Source (S) - This is the terminal where the majority carrier enters the MOSFET. For a P-channel MOSFET, it is usually connected to a higher voltage compared to the drain.
The IRF9540NPBF is typically used for switching and amplification in electronic circuits, benefiting from its ability to handle high power with low on-state resistance. It is often used in applications like power management, motor controllers, and DC-DC converters.
Manufacturer
Application
1. Power Management: Used in DC-DC converters and voltage regulators for efficient power distribution.
2. Load Switching: Suitable for high-speed switching applications in both consumer and industrial electronics.
3. Motor Control: Employed in controlling motors in automotive and industrial systems.
4. Lighting Systems: Used in dimmers and LED drivers for its efficient load control.
5. Battery Protection: Helps in managing charging and discharging cycles in battery-operated devices.
These applications benefit from its reliability, thermal performance, and ease of integration into circuits.