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IRF9630
+BOMMOSFET P-CH 200V 6.5A TO220AB
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ManufacturerVishay Siliconix
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Mfr. Part #IRF9630
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Datasheet IRF9630 DataSheet
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In Stock3934
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Specifications
| Attribute | Value |
| Supplier | Vishay Siliconix |
| Package | Tube |
| ProductStatus | Obsolete |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 200 V |
| Current-ContinuousDrain(Id)@25°C | 6.5A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 800mOhm @ 3.9A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 29 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 700 pF @ 25 V |
| PowerDissipation(Max) | 74W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220AB |
Overview
Description
Key specifications of the IRF9630 include a drain-source voltage (V_DS) of -200V and a continuous drain current (I_D) of -6.5A. It possesses a low on-resistance (R_DS(on)), which minimizes power loss and improves efficiency. The MOSFET's gate-source voltage (V_GS) is typically rated at ±20V, allowing compatibility with various control signals.
The IRF9630 is housed in a TO-220 package, offering ease of mounting and effective heat dissipation. Its thermal and electrical characteristics make it a versatile component for circuits demanding robust power handling capabilities. When designing circuits with the IRF9630, proper heat management and gate drive considerations are necessary to maximize performance and reliability.
Equivalent
Features
1. Voltage and Current Ratings: It can handle a maximum drain-source voltage (V_DS) of -200V and a continuous drain current (I_D) of -6.5A.
2. R_DS(on): The on-state resistance is relatively low, typically around 0.8 ohms, allowing for efficient current flow with minimal power loss.
3. Threshold Voltage: The gate threshold voltage (V_GS(th)) typically ranges between -2V to -4V, making it suitable for use with standard logic level voltages.
4. Power Dissipation: It has a power dissipation capacity of approximately 75W, which helps in managing heat generation during operation.
5. Package Type: The IRF9630 is commonly available in a TO-220 package, which offers ease of mounting and effective heat dissipation.
6. Applications: It is used in various applications like power supply regulation, motor control, and switching applications due to its robustness and efficiency.
These features make the IRF9630 a versatile choice for power control and conversion tasks in electronic circuits.
Pinout
1. Gate (G): This pin is responsible for controlling the MOSFET's operation. By applying a voltage to the gate, you can turn the MOSFET on or off. For the IRF9630, a negative voltage relative to the source is required to turn it on, as it is a P-channel device.
2. Drain (D): This pin connects to the load. When the MOSFET is turned on (by applying the appropriate gate voltage), current flows from the source to the drain, allowing the device to conduct.
3. Source (S): This pin is typically connected to the negative supply voltage or ground in a circuit. In a P-channel MOSFET, the current flows from the source to the drain when the device is activated.
The IRF9630 is widely used in power management and switching applications due to its ability to handle relatively high voltages and currents efficiently.