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IRF9Z34NPBF
+BOMMOSFET P-CH 55V 19A TO220AB
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ManufacturerInfineon Technologies
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Mfr. Part #IRF9Z34NPBF
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Datasheet IRF9Z34NPBF DataSheet
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Package TO-220AB
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In Stock3631
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Specifications
| Attribute | Value |
| Package | Tube |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 55 V |
| Current-ContinuousDrain(Id)@25°C | 19A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 100mOhm @ 10A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 35 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 620 pF @ 25 V |
| PowerDissipation(Max) | 68W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220AB |
Overview
Description
The device also exhibits fast switching speeds, low gate charge, and robust thermal performance, contributing to its effectiveness in demanding environments. The "PBF" suffix indicates that it is lead-free and RoHS compliant, aligning with environmental standards. These characteristics make the IRF9Z34NPBF a versatile choice for designers looking to optimize power efficiency and performance in their circuits. Its TO-220 package provides ease of mounting and heat dissipation, further enhancing its applicability in both consumer electronics and industrial applications.
Equivalent
Features
1. Voltage and Current Ratings: It has a drain-to-source voltage (V_DS) of -55V and a continuous drain current (I_D) of -19A.
2. R_DS(on): The on-resistance is approximately 0.05 ohms, which allows for efficient current flow with minimal energy loss.
3. Package Type: It is available in a TO-220 package, which is common for power transistors due to its ability to dissipate heat efficiently.
4. Gate Threshold Voltage: The gate threshold voltage is typically between -2V and -4V, ensuring the MOSFET fully turns on for efficient switching.
5. Applications: Suitable for applications such as DC-DC converters, power management in battery-operated devices, and load switching.
6. Temperature Range: It operates within a temperature range of -55°C to +175°C, making it suitable for various environments.
7. Low Gate Charge: Offers low gate charge, enhancing switching performance and efficiency in high-frequency applications.
These features make the IRF9Z34NPBF a reliable choice for various electronic applications requiring efficient power management and switching capabilities.
Pinout
1. Gate (G): This pin controls the MOSFET's operation. Applying a voltage to the gate allows current to flow between the source and the drain.
2. Drain (D): Current flows out of the drain when the MOSFET is turned on. It is the main current output terminal.
3. Source (S): Current flows into the source terminal. It is connected to the negative side of the voltage supply for a P-channel MOSFET.
The IRF9Z34NPBF is often used in applications such as power switching, load switching, and inverting high-side drivers due to its ability to handle substantial current and voltage in P-channel configurations.
Manufacturer
Application
1. Power Management: Used in DC-DC converters, switching regulators, and load switches.
2. Motor Control: Suitable for driving small motors in consumer electronics and industrial devices.
3. Battery Protection: Provides overcurrent and short-circuit protection in battery-powered devices.
4. LED Drivers: Utilized in LED lighting systems for efficient power delivery and control.
5. Inverters and SMPS: Employed in inverters and switched-mode power supplies for efficient power conversion.
Its robustness and efficiency make it versatile for use in both consumer and industrial electronics.