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IRF9Z34NSTRLPBF
+BOMMOSFET P-CH 55V 19A D2PAK
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ManufacturerInfineon Technologies
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Mfr. Part #IRF9Z34NSTRLPBF
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Datasheet IRF9Z34NSTRLPBF DataSheet
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Package TO-263-3
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In Stock4756
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Specifications
| Attribute | Value |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | HEXFET® |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 55 V |
| Current - Continuous Drain(Id) @ 25°C | 19A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 100mOhm @ 10A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 35 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 620 pF @ 25 V |
| Power Dissipation (Max) | 3.8W (Ta), 68W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D2PAK |
Overview
Description
The IRF9Z34NSTRLPBF is commonly used in applications such as power converters, load switches, and other power management systems, where high switching speed and efficiency are paramount. Its P-channel configuration makes it suitable for high-side switching applications. This MOSFET is available in a standard TO-220 package, which provides robust mechanical stability and efficient heat dissipation.
Overall, the IRF9Z34NSTRLPBF is valued for its reliability, efficiency, and ease of integration in various electronic circuits, making it a popular choice among engineers and designers in the semiconductor industry.
Equivalent
1. FQP27P06 from ON Semiconductor
2. SI9433BDY from Vishay
3. STP9P20FP from STMicroelectronics
These alternatives are similar in terms of voltage, current ratings, and MOSFET type, but always verify the specifications to ensure compatibility with your application.
Features
1. P-Channel Configuration: This MOSFET is designed for negative polarity operation, conducting when the gate-source voltage is at a negative threshold.
2. Voltage and Current Ratings: It typically supports a drain-source voltage (Vds) of around -55V and a drain current (Id) of up to -20A, making it suitable for medium-power applications.
3. Low On-Resistance: It has a low on-state resistance (Rds(on)), which reduces power loss and improves efficiency when the MOSFET is in the 'on' state.
4. Surface Mount Package: The transistor is available in a TO-252 (DPAK) surface-mount package, which is conducive to automated assembly processes.
5. Applications: It is commonly used in applications such as load switches, DC-DC converters, and battery management systems where efficient switching is required.
These attributes make it a versatile component in various electronic circuits requiring efficient power management.
Pinout
1. Gate (G): This pin is used to control the MOSFET's switching operation. Applying a voltage to the gate allows current to flow between the source and drain.
2. Drain (D): This is the terminal through which the main current flows when the MOSFET is on. In a P-channel MOSFET, the current flows from the source to the drain when the gate is activated.
3. Source (S): This is the terminal from which the current enters the MOSFET. In a P-channel device, it is typically connected to a positive voltage.
The IRF9Z34NSTRLPBF is used in various applications requiring efficient switching and amplification, including power management and motor control. Its P-channel nature makes it suitable for high-side switching applications.
