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IRFB31N20DPBF
+BOMMOSFET N-CH 200V 31A TO220AB
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ManufacturerInfineon Technologies
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Mfr. Part #IRFB31N20DPBF
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Datasheet IRFB31N20DPBF DataSheet
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In Stock14205
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Specifications
| Attribute | Value |
| Supplier | Rochester Electronics, LLC,Infineon Technologies |
| Package / Case | Bulk,Tube |
| Series | HEXFET® |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200 V |
| Current - Continuous Drain(Id) @ 25°C | 31A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 82mOhm @ 18A, 10V |
| Vgs(th)(Max) @ Id | 5.5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 107 nC @ 10 V |
| Vgs(Max) | ±30V |
| Input Capacitance(Ciss)(Max) @ Vds | 2370 pF @ 25 V |
| Power Dissipation (Max) | 3.1W (Ta), 200W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
Overview
Description
The IRFB31N20DPBF is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for efficient switching and amplification in electronic circuits. It is part of the HEXFET® series by Infineon Technologies. This N-channel MOSFET is known for its high-speed switching capabilities and low on-state resistance, which contribute to improved energy efficiency and thermal performance in various applications.
Key specifications include a maximum drain-source voltage (V_DS) of 200V, a continuous drain current (I_D) of 31A, and a low R_DS(on) resistance of approximately 70mΩ. The device is often used in power management, automotive, and industrial applications due to its robustness and reliability.
Packaged in a TO-220, it offers ease of mounting and good thermal dissipation. The IRFB31N20DPBF is RoHS compliant, indicating it is free from hazardous substances. Overall, this MOSFET is widely adopted for its balance of performance, efficiency, and cost-effectiveness in various power electronic systems.
Key specifications include a maximum drain-source voltage (V_DS) of 200V, a continuous drain current (I_D) of 31A, and a low R_DS(on) resistance of approximately 70mΩ. The device is often used in power management, automotive, and industrial applications due to its robustness and reliability.
Packaged in a TO-220, it offers ease of mounting and good thermal dissipation. The IRFB31N20DPBF is RoHS compliant, indicating it is free from hazardous substances. Overall, this MOSFET is widely adopted for its balance of performance, efficiency, and cost-effectiveness in various power electronic systems.
Equivalent
The IRFB31N20DPBF is a N-channel MOSFET primarily used in power management applications. Equivalent products include:
1. STMicroelectronics STP30N20
2. ON Semiconductor FDP038AN08A0
3. Infineon IPB031N06N3
4. Vishay SIHP31N20D-GE3
Please ensure compatibility with your specific application, as equivalent products may differ slightly in parameters like package type, RDS(on), and gate charge. Always check the datasheets for detailed specifications.
1. STMicroelectronics STP30N20
2. ON Semiconductor FDP038AN08A0
3. Infineon IPB031N06N3
4. Vishay SIHP31N20D-GE3
Please ensure compatibility with your specific application, as equivalent products may differ slightly in parameters like package type, RDS(on), and gate charge. Always check the datasheets for detailed specifications.
Features
The IRFB31N20DPBF is a power MOSFET designed by Infineon Technologies. Key features include:
1. N-Channel MOSFET: It is an N-channel device, which means it allows current to flow when a positive voltage is applied to the gate.
2. Voltage and Current Ratings: It supports a drain-source voltage (V_DS) of 200V and a continuous drain current (I_D) of up to 57A, making it suitable for high-power applications.
3. Low On-Resistance: The MOSFET features a low on-resistance (R_DS(on)) of approximately 38 milliohms, which helps minimize power loss and improve efficiency.
4. Package Type: It is available in a TO-220 package, which is a common through-hole package offering good thermal performance.
5. Temperature Range: The device operates within a wide temperature range, suitable for various industrial applications.
6. Lead-Free: This part is RoHS compliant, meaning it is lead-free and environmentally friendly.
These features make it ideal for applications such as motor drives, power supplies, and other high-power circuits.
1. N-Channel MOSFET: It is an N-channel device, which means it allows current to flow when a positive voltage is applied to the gate.
2. Voltage and Current Ratings: It supports a drain-source voltage (V_DS) of 200V and a continuous drain current (I_D) of up to 57A, making it suitable for high-power applications.
3. Low On-Resistance: The MOSFET features a low on-resistance (R_DS(on)) of approximately 38 milliohms, which helps minimize power loss and improve efficiency.
4. Package Type: It is available in a TO-220 package, which is a common through-hole package offering good thermal performance.
5. Temperature Range: The device operates within a wide temperature range, suitable for various industrial applications.
6. Lead-Free: This part is RoHS compliant, meaning it is lead-free and environmentally friendly.
These features make it ideal for applications such as motor drives, power supplies, and other high-power circuits.
Pinout
The IRFB31N20DPBF is a power MOSFET manufactured by Infineon Technologies. It is designed for high-efficiency power switching applications. This device comes in a TO-220 package and typically has three pins:
1. Gate (G): This pin is used to control the MOSFET. By applying a voltage to the gate, the device can be turned on or off.
2. Drain (D): This pin is the main current-carrying terminal when the MOSFET is in the 'on' state. It is connected to the load.
3. Source (S): This pin is the terminal through which current exits the MOSFET.
The IRFB31N20DPBF is known for its low on-resistance and high-speed switching capability, making it suitable for applications such as power supply, motor control, and DC-DC converters. It can handle a continuous drain current of up to 31A and has a maximum drain-source voltage (Vds) of 200V.
1. Gate (G): This pin is used to control the MOSFET. By applying a voltage to the gate, the device can be turned on or off.
2. Drain (D): This pin is the main current-carrying terminal when the MOSFET is in the 'on' state. It is connected to the load.
3. Source (S): This pin is the terminal through which current exits the MOSFET.
The IRFB31N20DPBF is known for its low on-resistance and high-speed switching capability, making it suitable for applications such as power supply, motor control, and DC-DC converters. It can handle a continuous drain current of up to 31A and has a maximum drain-source voltage (Vds) of 200V.
Manufacturer
The IRFB31N20DPBF is manufactured by Infineon Technologies. Infineon is a German semiconductor manufacturer that specializes in designing and producing a wide range of semiconductor solutions. The company focuses on automotive, industrial, and multimarket sectors and provides products and systems for applications such as power management, digital security, and embedded control. Infineon is known for its expertise in power electronics, microcontrollers, sensors, and security solutions.
Application
The IRFB31N20DPBF is a N-channel MOSFET designed for high-efficiency power management and switching applications. Common application areas include:
1. Switching Power Supplies: Efficient voltage regulation and conversion.
2. Motor Control: Drives motors in industrial and automotive applications.
3. DC-DC Converters: Enhances performance in energy-efficient devices.
4. Inverters: Used in solar inverters and uninterruptible power supplies (UPS).
5. Load Switches: Acts as a reliable switch for various electronic loads.
6. Battery Management Systems: Controls charging and discharging circuits.
7. Audio Amplifiers: Improves sound quality by minimizing distortion.
Its low on-resistance and fast switching capabilities make it suitable for high-speed and high-power applications.
1. Switching Power Supplies: Efficient voltage regulation and conversion.
2. Motor Control: Drives motors in industrial and automotive applications.
3. DC-DC Converters: Enhances performance in energy-efficient devices.
4. Inverters: Used in solar inverters and uninterruptible power supplies (UPS).
5. Load Switches: Acts as a reliable switch for various electronic loads.
6. Battery Management Systems: Controls charging and discharging circuits.
7. Audio Amplifiers: Improves sound quality by minimizing distortion.
Its low on-resistance and fast switching capabilities make it suitable for high-speed and high-power applications.
Package
The IRFB31N20DPBF is a power MOSFET packaged in a TO-220AB configuration. The TO-220 package is a through-hole mounting type known for its ability to handle moderate power levels and efficient heat dissipation.
