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IRFB4020PBF
+BOMMOSFET N-CH 200V 18A TO220AB
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ManufacturerInfineon Technologies
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Mfr. Part #IRFB4020PBF
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Datasheet IRFB4020PBF DataSheet
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Package TO220-3
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In Stock1864
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Specifications
| Attribute | Value |
| Package | Tube |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 200 V |
| Current-ContinuousDrain(Id)@25°C | 18A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 100mOhm @ 11A, 10V |
| Vgs(th)(Max)@Id | 4.9V @ 100µA |
| GateCharge(Qg)(Max)@Vgs | 29 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 1200 pF @ 50 V |
| PowerDissipation(Max) | 100W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220AB |
Overview
Description
The IRFB4020PBF is an N-channel MOSFET, characterized by its ability to handle high currents and voltages, with a typical drain-source voltage (Vds) of 200V and a continuous drain current (Id) of approximately 24A. It is packaged in a TO-220 form factor, which provides good thermal performance and ease of mounting on heat sinks.
The device is lead-free and RoHS compliant, aligning with modern environmental standards. Its robust construction and performance characteristics make it a popular choice in various industrial and consumer electronics applications requiring efficient power handling.
Equivalent
1. STP20N60M2 - by STMicroelectronics: A similar N-channel MOSFET with comparable voltage and current ratings.
2. FQA19N60C - by ON Semiconductor: Offers similar characteristics in terms of voltage and current handling.
3. IPB020N06N - by Infineon Technologies: Another alternative with closely matching specifications.
Always ensure to cross-check the specifications to match your application requirements precisely.
Features
1. N-Channel MOSFET: It is an N-channel MOSFET, suitable for a wide range of power management applications.
2. Voltage and Current Ratings: Capable of handling a maximum drain-source voltage (V_ds) of 200V and a continuous current (I_d) of 94A.
3. Low On-Resistance: It features a low on-resistance (R_ds(on)) of approximately 27 mΩ, enhancing efficiency by minimizing power loss.
4. High-Speed Switching: The device supports fast switching speeds, beneficial for applications requiring quick switching times.
5. Thermal Performance: Equipped with good thermal performance, the MOSFET can operate effectively under elevated temperatures.
6. Lead-Free: As a PBF (Pb-free) component, it complies with RoHS standards, making it environmentally friendly.
7. Applications: Commonly used in automotive, industrial, and consumer electronics for power switching, motor control, and power supply circuits.
These features make the IRFB4020PBF suitable for high-power applications requiring efficient and reliable performance.
Pinout
The IRFB4020PBF has three pins:
1. Gate (G): This pin is used to control the MOSFET. By applying a voltage to the gate, the MOSFET is turned on, allowing current to flow between the drain and source.
2. Drain (D): This is the terminal where the current flows out when the MOSFET is on. It is connected to the load in switching applications.
3. Source (S): Current flows into this terminal when the MOSFET is on. It is typically connected to ground in many applications.
The IRFB4020PBF offers features such as low on-state resistance and fast switching, making it suitable for high-efficiency power management applications.
Manufacturer
Application
1. Switching Power Supplies: Utilized for efficient energy conversion in power supplies for computers, telecommunications, and industrial equipment.
2. Motor Control: Used in variable speed drives and controllers for efficient motor operation in automotive and industrial applications.
3. Inverters and Converters: Found in solar inverters, UPS systems, and DC-DC converters for renewable energy systems.
4. Audio Amplifiers: Enhances performance in high-power audio amplification systems.
5. Battery Management: Employed in battery protection and charging systems for energy storage solutions.
These applications benefit from the MOSFET’s low on-resistance and high-speed switching capabilities.