IRFB4229PBF

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IRFB4229PBF

+BOM

MOSFET N-CH 250V 46A TO220AB

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Specifications

Attribute Value
Package Bulk,Tube
Series HEXFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 250 V
Current-ContinuousDrain(Id)@25°C 46A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 46mOhm @ 26A, 10V
Vgs(th)(Max)@Id 5V @ 250µA
GateCharge(Qg)(Max)@Vgs 110 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 4560 pF @ 25 V
PowerDissipation(Max) 330W (Tc)
OperatingTemperature -40°C ~ 175°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220AB

Overview

Description

The IRFB4229PBF is a N-channel power MOSFET from Infineon Technologies, designed for high-efficiency switching applications. Key features include:
- Voltage Rating: 250V
- Current Rating: 75A (continuous)
- Low On-Resistance (RDS(on)): 19mΩ (max at 10V VGS)
- Fast Switching: Optimized for high-speed performance
- Package: TO-220AB (through-hole, easy to mount)
Ideal for DC-DC converters, motor drives, and power supplies, it offers robust performance with low conduction losses. The PBF suffix indicates lead-free (RoHS-compliant) construction.
For detailed specs, refer to the datasheet.

Equivalent

Equivalent products to the IRFB4229PBF (200V, 60A N-channel MOSFET) include:
- IRFB4227PBF (200V, 62A)
- IRFB4410PBF (100V, 96A) – lower voltage
- IRFB4110PBF (100V, 180A) – higher current
- STP80NF55-06 (55V, 80A) – lower voltage
- FDP8870 (80V, 120A)
Check datasheets for exact specs. Alternatives may vary in voltage/current ratings.

Pinout

The IRFB4229PBF is a TO-220AB package N-channel MOSFET with 3 pins:
1. Gate (G): Controls the switching operation (typically driven by 4.5V to 10V).
2. Drain (D): Connects to the load (handles up to 250V, 195A peak).
3. Source (S): Ground reference, connected to the circuit common.
Key Features:
- 250V drain-source voltage (VDS).
- 195A pulsed drain current (ID).
- Low on-resistance (1.7mΩ at 10V VGS).
- Fast switching for power applications (e.g., motor drives, inverters).
Function: Acts as a high-power switch or amplifier in DC/DC converters, motor control, and other high-current circuits.

Application

The IRFB4229PBF, a high-power MOSFET, is commonly used in:
1. Switching Power Supplies – Efficient energy conversion in AC/DC and DC/DC systems.
2. Motor Drives – Controls motors in industrial, automotive (e.g., EVs), and robotics.
3. Solar Inverters – Converts DC to AC in photovoltaic systems.
4. UPS Systems – Ensures stable power backup in critical applications.
5. Welding Equipment – Provides high-current switching for arc welding.
Its low on-resistance and high current handling make it ideal for high-efficiency, high-power applications.

Package

The IRFB4229PBF is a Power MOSFET housed in a TO-220AB package. This through-hole package is widely used for power applications, offering good thermal performance and ease of mounting. The TO-220AB features a metal tab for heat dissipation and is suitable for high-current, high-voltage applications. Its standard pin configuration includes Gate, Drain, and Source terminals.

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