IRFB4410PBF

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IRFB4410PBF

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MOSFET N-CH 100V 88A TO220AB

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Specifications

Attribute Value
Series HEXFET®
PartStatus Not For New Designs
BaseProductNumber IRFB4410
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 100 V
Current-ContinuousDrain(Id)@25°C 88A (Tc)
DriveVoltage(MaxRdsOn,MinRdsOn) 10V
RdsOn(Max)@Id,Vgs 10mOhm @ 58A, 10V
Vgs(th)(Max)@Id 4V @ 150µA
GateCharge(Qg)(Max)@Vgs 180 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 5150 pF @ 50 V
PowerDissipation(Max) 200W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220AB
Package TO-220-3
Packaging Tube

Overview

Description

The IRFB4410PBF is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed by Infineon Technologies. It is primarily used in power management applications due to its high efficiency and reliability. The MOSFET features a low on-resistance, which minimizes power loss and heat generation, making it suitable for applications that require efficient power conversion.
Key specifications include a drain-to-source voltage (V_DS) of 100V and a continuous drain current (I_D) of 104A at 25°C. It has a maximum power dissipation of 200W, ensuring robust performance in demanding environments. The IRFB4410PBF is typically housed in a TO-220 package, which provides good heat dissipation capabilities.
This component is popular in applications like DC-DC converters, motor drives, and switching power supplies due to its fast switching speed and ability to handle high current loads. It is lead-free and RoHS compliant, aligning with global standards for electronic components.

Equivalent

The IRFB4410PBF is a N-channel MOSFET produced by Infineon Technologies. Equivalent products with similar specifications include the STP55NF06 from STMicroelectronics, the FDP8770 from ON Semiconductor, and the IPP110N10N3 from Infineon. While selecting an equivalent, ensure matching specifications like the voltage, current ratings, and Rds(on) to meet the specific requirements of your application. It's important to verify compatibility with the circuit design before substitution.

Features

The IRFB4410PBF is a N-channel power MOSFET designed for high-efficiency power management applications. Key features include:
1. Low Rds(on): This MOSFET offers a low on-resistance, typically around 10 mΩ, which minimizes power loss and improves efficiency.
2. High Current Handling: It can handle continuous currents up to 94A, making it suitable for high-power applications.
3. Fast Switching: The device supports fast switching speeds, which enhances efficiency in high-frequency applications.
4. Voltage Rating: The IRFB4410PBF has a maximum drain-source voltage (Vds) of 100V, providing flexibility for various power supply designs.
5. TO-220 Package: It is encased in a TO-220 package, providing good thermal performance and ease of mounting.
6. Thermal Stability: The MOSFET is designed to handle high temperatures, with a maximum junction temperature of 175°C.
7. Lead-free: It complies with RoHS standards, ensuring it is environmentally friendly.
These features make the IRFB4410PBF ideal for switching applications, motor drives, and other power management systems.

Pinout

The IRFB4410PBF is a N-channel MOSFET designed for high-speed switching applications. It typically comes in a TO-220 package, which is a common type for power transistors.
Pin Count and Functions:
1. Pin 1: Gate (G) - This pin is responsible for controlling the MOSFET. A voltage applied here turns the device on or off.

2. Pin 2: Drain (D) - The drain is the pin that connects to the load. Current flows from the drain to the source when the MOSFET is on.
3. Pin 3: Source (S) - The source is the terminal where the channel starts. In an N-channel MOSFET like the IRFB4410PBF, current flows into this pin from the drain when the MOSFET is conducting.
The IRFB4410PBF is used in applications requiring efficient power management and high-speed switching, such as power supplies, motor drivers, and DC-DC converters.

Manufacturer

The IRFB4410PBF is manufactured by Infineon Technologies. Infineon is a German semiconductor manufacturer that produces a wide range of electronic components, including power semiconductors, microcontrollers, sensors, and other semiconductor solutions. The company originated from a division of Siemens AG and operates globally, providing products and solutions for automotive, industrial, power management, and digital security markets. Infineon is known for its innovation and contribution to advancing technologies in these sectors.

Application

The IRFB4410PBF is a power MOSFET primarily used in applications requiring efficient power management and switching. Its main application areas include:
1. Switch Mode Power Supplies (SMPS): Utilized for converting electrical power efficiently.
2. DC-DC Converters: Used in high-efficiency power conversion processes.
3. Motor Drives: Applies in motor control systems requiring high-frequency switching.
4. Battery Management Systems: Ensures efficient charging and discharging.
5. Renewable Energy Systems: Used in solar inverters and other energy conversion systems.
6. Uninterruptible Power Supplies (UPS): Provides efficient power conversion and distribution.
7. Automotive Electronics: Applied in electric and hybrid vehicle power systems.
These applications benefit from the MOSFET's low on-resistance and high-speed switching capabilities.

Package

The IRFB4410PBF is a MOSFET that comes in a TO-220 package type. This through-hole package is commonly used for power semiconductors due to its good thermal performance and ease of mounting onto heat sinks.

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