IRFB4510PBF

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IRFB4510PBF

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IRFB4510 - 12V-300V N-CHANNEL PO

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Specifications

Attribute Value
Package / Case Bulk
Series HEXFET®
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain(Id) @ 25°C 62A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 13.5mOhm @ 37A, 10V
Vgs(th)(Max) @ Id 4V @ 100µA
Gate Charge(Qg)(Max) @ Vgs 87 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 3180 pF @ 50 V
Power Dissipation (Max) 140W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB

Overview

Description

The IRFB4510PBF is a power MOSFET designed for use in various applications requiring efficient power management. It is part of the HEXFET® Power MOSFET series by Infineon Technologies (formerly International Rectifier). This N-channel MOSFET is notable for its low on-resistance and high-speed switching capabilities, making it suitable for high-power applications such as motor drives, power supplies, and industrial automation.
Key specifications include a maximum drain-source voltage (V_DS) of 100V, a continuous drain current (I_D) of up to 85A, and a low on-resistance (R_DS(on)) of 4.5 milliohms. Its TO-220 package allows for easy mounting and efficient thermal management.
The device is designed to minimize energy losses and improve overall system efficiency. It is lead-free and RoHS compliant, aligning with environmental standards. Its robust construction and reliable performance make it a popular choice for engineers seeking high-performance components in power electronics.

Equivalent

The IRFB4510PBF is a N-channel MOSFET. Equivalent products include the STP55NF06 from STMicroelectronics, FDP8860 from ON Semiconductor, and the FQA50N06 from Fairchild Semiconductor. Make sure to verify the specifications such as voltage, current ratings, and gate charge to ensure compatibility with your application.

Features

The IRFB4510PBF is an N-channel MOSFET designed by International Rectifier. Key features include:
1. Voltage and Current Ratings: It has a drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) of 84A at 25°C, making it suitable for high-power applications.
2. RDS(on): The on-resistance (R_DS(on)) is 17.5 mΩ, which ensures efficient power handling with minimal losses.
3. Thermal Performance: It offers excellent thermal performance with a maximum junction temperature of 175°C, enhancing reliability in demanding environments.
4. Package: The device is housed in a TO-220 package, which provides good thermal dissipation and is commonly used for power applications.
5. Fast Switching: Designed for fast switching speeds, it is ideal for applications requiring efficient and rapid switching.
6. Applications: Suitable for motor drives, power supplies, and DC-DC converters due to its robust performance and efficiency.
These features make the IRFB4510PBF a versatile choice for various industrial and consumer applications that necessitate efficient power management and reliability.

Pinout

The IRFB4510PBF is a N-channel MOSFET used for switching applications. It is typically packaged in a TO-220AB package. The pin count and their functions are as follows:
1. Pin 1 (Gate): This is the control pin used to turn the MOSFET on or off. A voltage applied here controls the flow of current between the drain and the source.
2. Pin 2 (Drain): This pin is connected to the load. When the MOSFET is turned on (by applying appropriate voltage at the gate), current flows from the drain to the source.
3. Pin 3 (Source): This is typically connected to the ground or the negative side of the power supply in a circuit. It acts as the return path for the current flowing through the MOSFET.
The IRFB4510PBF is designed for high efficiency and fast switching, often used in power management applications, motor drives, and inverter circuits.

Manufacturer

The IRFB4510PBF is manufactured by Infineon Technologies. Infineon is a German semiconductor company, known for designing and manufacturing a wide range of electronic components and systems. It specializes in automotive, industrial power control, power management and multimarket, and digital security solutions. The company is recognized for its innovation in power semiconductors, microcontrollers, and security ICs, and it plays a significant role in the development of technologies that drive renewable energy systems, smart devices, and secure communication networks.

Application

The IRFB4510PBF is a N-channel MOSFET commonly used in power electronics applications. Its key areas include:
1. Switching Power Supplies: Efficiently manages power conversion in SMPS.
2. Motor Control: Drives motors in industrial and automotive applications.
3. DC-DC Converters: Used in voltage regulation and conversion tasks.
4. Inverters: Converts DC to AC in renewable energy systems, like solar inverters.
5. Battery Management Systems: Controls charging and discharging processes.
6. Audio Amplifiers: Enhances power output in Class D amplifiers.
7. UPS Systems: Provides reliable power switching in uninterruptible power supplies.
Its high current capacity and low on-resistance make it suitable for efficient and high-performance applications.

Package

The IRFB4510PBF is a N-channel MOSFET manufactured by Infineon Technologies, and it is typically available in a TO-220 package type.