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IRFB7440PBF
+BOMMOSFET N-CH 40V 120A TO220AB
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ManufacturerInfineon Technologies
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Mfr. Part #IRFB7440PBF
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Datasheet IRFB7440PBF DataSheet
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Package TO-220
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In Stock2934
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Specifications
| Attribute | Value |
| Package / Case | Tube |
| Series | HEXFET®, StrongIRFET™ |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40 V |
| Current - Continuous Drain(Id) @ 25°C | 120A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 6V, 10V |
| Rds On(Max) @ Id Vgs | 2.5mOhm @ 100A, 10V |
| Vgs(th)(Max) @ Id | 3.9V @ 100µA |
| Gate Charge(Qg)(Max) @ Vgs | 135 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 4730 pF @ 25 V |
| Power Dissipation (Max) | 143W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
Overview
Description
Key specifications include a maximum drain-source voltage (V_DS) of 40V, a continuous drain current (I_D) of 80A, and an R_DS(on) of approximately 10 mΩ. Its TO-220 package provides good thermal performance and ease of mounting on PCBs with heatsinks for enhanced heat dissipation. The IRFB7440PBF is also RoHS compliant, indicating that it meets environmental standards for hazardous substances.
Overall, the IRFB7440PBF is a versatile and reliable MOSFET option for engineers and designers seeking efficient and robust power switching solutions in both industrial and consumer electronics.
Equivalent
1. STMicroelectronics' STP110N8F6.
2. ON Semiconductor's FDB045AN08A0.
3. Infineon's IPP110N08S4-03.
These alternatives may have slight variations in parameters like Rds(on), Vgs, and Id, so it's important to check datasheets to ensure compatibility for specific applications.
Features
1. Voltage and Current Ratings: It has a drain-to-source voltage (V_DS) rating of 40V and a continuous drain current (I_D) of 195A, making it suitable for high-current applications.
2. R_DS(on): The on-resistance is very low, typically around 2.5 mΩ, which helps reduce conduction losses.
3. Package Type: It is available in a TO-220AB package, which is widely used for easy mounting and heat dissipation.
4. Technology: The MOSFET utilizes HEXFET technology, known for enhancing performance in switching applications.
5. Thermal Performance: It offers improved thermal resistance and is capable of operating efficiently under high temperatures.
6. Applications: Ideal for applications like synchronous rectification in power supplies, motor drives, and DC-DC converters.
7. Environmentally Friendly: It is lead-free and RoHS compliant, ensuring it meets environmental safety standards.
Overall, the IRFB7440PBF is valued for its high efficiency, robustness, and reliability in power management applications.
Pinout
The IRFB7440PBF is packaged in a TO-220 package, which commonly has 3 pins. The pin functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. When voltage is applied to the gate, it allows current to flow between the drain and source.
2. Drain (D): This is the output pin where the current flows out of the MOSFET when it is in the 'on' state.
3. Source (S): This is the return path for the current flowing through the MOSFET, completing the circuit.
The IRFB7440PBF is known for its low on-state resistance and high current handling capability, making it suitable for applications such as DC-DC converters, motor drives, and other high-power switching applications.
Manufacturer
Application
1. Power Supplies: Used in switch-mode power supplies for high-efficiency energy conversion.
2. Motor Control: Effective in driving motors for industrial and consumer electronics due to its high current handling.
3. Automotive Systems: Applied in electrical control units, power steering, and other automotive power applications.
4. Renewable Energy: Utilized in solar inverters and wind energy systems for efficient power conversion.
5. Telecommunications: Suitable for power amplifiers and signal processing circuits.
Its low on-resistance and high-speed switching capabilities make it versatile for various high-power applications.